• 전기전자학회논문지
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• 제27권4호
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• pp.386-390
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• 2023

본 연구에서는 기존 상보성 금속 산화막 반도체 공정을 활용하여 제작된 실리콘 나노시트(SiNS) 피드백 전계효과 트랜지스터(FBFET)의 준비휘발성 메모리 특성을 분석하였다. 과노광공정을 이용하여 형성된 SiNS 채널층의 폭은 180 nm이고 높이는 70 nm이었다. 양성 피드백 루프를 기반으로 동작하는 SiNS FBFET의 낮은 문턱전압이하 기울기는 1.1 mV/dec, ON/OFF 전류비는 2.4×10⁷이었다. 또한 SiNS FBFET는 50 초 동안 상태를 유지하는 메모리 특성을 보여 준휘발성메모리 소자로 활용 가능성을 제시하였다.

• 전기전자학회논문지
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• 제27권4호
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• pp.418-424
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• 2023

본 연구에서는 더블게이트 실리콘 나노시트 (SiNS) 피드백 전계효과 트랜지스터(FBFET)의 전기적 특성에 열처리가 미치는 영향을 분석하였다. 1000 초 동안 바이어스 스트레스를 인가했을 때 더블게이트 SiNS FBFET는 inversion layer의 전자에 의한 계면 트랩의 증가로 인해 채널 모드와 무관하게 negative bias stress 보다는 positive bias stress의 영향을 더 많이 받았다. 300 ℃에서 10 분 동안 열처리를 진행한 이후 소자는 원래의 특성을 완전히 회복하였으며 다시 1000 초 동안 바이어스 스트레스를 인가해도 특성이 변하지 않았다.

• Advances in nano research
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• 제10권5호
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• pp.415-422
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• 2021

Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi₃NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi₃NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi₃NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.

• 센서학회지
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• 제31권4호
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• pp.228-237
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• 2022

Two-dimensional (2D) nanomaterials have demonstrated the potential to replace silicon and compound semiconductors that are conventionally used in photodetectors. These materials are ultrathin and have superior electrical and optoelectronic properties as well as mechanical flexibility. Consequently, they are particularly advantageous for fabricating high-performance photodetectors that can be used for wearable device applications and Internet of Things technology. Although prototype photodetectors based on single microflakes of 2D materials have demonstrated excellent photoresponsivity across the entire optical spectrum, their practical applications are limited due to the difficulties in scaling up the synthesis process while maintaining the optoelectronic performance. In this review, we discuss facile methods to mass-produce 2D material-based photodetectors based on the exfoliation of van der Waals crystals into nanosheet dispersions. We first introduce the liquid-phase exfoliation process, which has been widely investigated for the scalable fabrication of photodetectors. Solution processing techniques to assemble 2D nanosheets into thin films and the optoelectronic performance of the fabricated devices are also presented. We conclude by discussing the limitations associated with liquid-phase exfoliation and the recent advances made due to the development of the electrochemical exfoliation process with molecular intercalants.