• 한국세라믹학회지
• /
• 제13권1호
• /
• pp.11-19
• /
• 1976

Carbon bond 흑연도가니는 clay bond 형 흑연도가니에 비하여 열전도율이 크고 열팽창율이 적으며, 열간하중성이 좋을 뿐 아니라 열충격에도 안전하여 그 사용 수명이 100여회나 된다. 본 연구결과 carbon bond 형 흑연도가니의 제조에 적합한 원료의 조합비는 인장흑연 40, 탄화규소 15, Ferro-silion 25, 무기질결합제 15, 영정석 3, ferromanganese 2 였으며, 흑연도가니 제조에 소요되는 원료들의 상호관계는 흑연량이 증가할수록 산화율 및 기공률이 증가하고, 기공률의 증가도 흑연의 산화량에 비례하였으며, 탄화규소의 증가는 산화율 및 기공률을 증가 시켰고 ferrosilion의 증가는 기공률 및 산화율에 별영향을 미치지 않었고, 유리질의 증가는 산화율 및 기공율을 감소시키나 과량이면 bloating현상이 일어나 오히려 기공률이 커졌다. 제조된 도가니의 물성은 부피비중2.31, 겉보기비중 2.58, 기공률 15.2%, 흡수율 6.01%, 압축강도 438kg/$cm^3$, 인장강도 256kg/$cm^3$, 산화소모율 3.77%이하이며 평균사용 수명은 105회였다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제15권2호
• /
• pp.301-306
• /
• 2015

An ultra-compact and wideband low noise amplifier (LNA) in a quad flat non-leaded (QFN) package is presented. The LNA monolithic microwave integrated circuit (MMIC) is implemented in a $0.25{\mu}m$ GaN IC technology on a Silicon Carbide (SiC) substrate provided by Triquint. A source degeneration inductor and a gate inductor are used to obtain the noise and input matching simultaneously. The resistive feedback and inductor peaking techniques are employed to achieve a wideband characteristic. The LNA chip is mounted in the $3{\times}3-mm^2$ QFN package and measured. The supply voltages for the first and second stages are 14 V and 7 V, respectively, and the total current is 70 mA. The highest gain is 13.5 dB around the mid-band, and -3 dB frequencies are observed at 0.7 and 12 GHz. Input and output return losses ($S_{11}$ and $S_{22}$) of less than -10 dB measure from 1 to 12 GHz; there is an absolute bandwidth of 11 GHz and a fractional bandwidth of 169%. Across the bandwidth, the noise figures (NFs) are between 3 and 5 dB, while the output-referred third-order intercept points (OIP3s) are between 26 and 28 dBm. The overall chip size with all bonding pads is $1.1{\times}0.9mm^2$. To the best of our knowledge, this LNA shows the best figure-of-merit (FoM) compared with other published GaN LNAs with the same gate length.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
• /
• pp.79-80
• /
• 2009

The local oxidation using an atomic force microscopy (AFM) is useful for Si-base fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC poly types, 4H-SiC is the most attractive poly type due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, $0.01{\sim}0.025\;{\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50%. The height of the fabricated oxide pattern ($1{\sim}3\;nm$) on SiC is similar to that of typically obtained on Si ($10^{15}{\sim}10^{17}\;cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. Whereas the simulated electric field on Si surface is constant ($5\;{\times}\;10^7\;V/m$), the electric field on SiC surface increases with increasing the doping concentration from ${\sim}10^{15}$ to ${\sim}10^{17}\;cm^{-3}$. We demonstrated that a specific electric field ($4\;{\times}\;10^7\;V/m$) and a doping concentration (${\sim}10^{17}\;cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

• 한국재료학회지
• /
• 제17권3호
• /
• pp.160-166
• /
• 2007

TRISO coatings on $ZrO_{2}$ surrogate kernels were conducted by a fluidized-bed chemical vapor deposition (FBCVD) method. Effects of the deposition temperature and the gas flow rate on the properties of SiC layer were investigated in the TRISO-coated particles. Deposition rate of the SiC layer decreased as the deposition temperature increased in the temperature range of $1460^{\circ}-1550^{\circ}C$. At the deposition temperature of $1550^{\circ}C$ the SiC layer contained an excess carbon, whereas the SiC layers had stoichiometric compositions at $1460^{\circ}C\;and\;1500^{\circ}C$. Hardness and elastic modulus measured by a nanoindentation method were the highest in the SiC layer deposited at $1500^{\circ}C$. The SiC layer deposited at the gas flow rate of 4000 sccm exhibited a high porosity and contained large pores more than $1{\mu}m$, being due to a violent spouting of particles. On the other hand, the SiC layer deposited at 2500 sccm revealed the lowest porosity.

• 한국재료학회지
• /
• 제26권11호
• /
• pp.656-661
• /
• 2016

4H- and 6H-SiC grown by physical vapor transport method were investigated by transmission electron microscopy (TEM). From the TEM diffraction patterns observed along the [11-20] zone axis, 4H- and 6H-SiC were identified due to their additional diffraction spots, indicating atomic stacking sequences. However, identification was not possible in the [10-10] zone axis due to the absence of additional diffraction spots. Basal plane dislocations (BPDs) were investigated in the TEM specimen prepared along the [10-10] zone axis using the two-beam technique. BPDs were two Shockley partial dislocations with a stacking fault (SF) between them. Shockley partial BPDs arrayed along the [0001] growth direction were observed in the investigated 4H-SiC. This arrayed configuration of Shockley partial BPDs cannot be recognized from the plan view TEM with the [0001] zone axis. The evaluated distances between the two Shockley partial dislocations for the investigated samples were similar to the equilibrium distance, with values of several hundreds of nanometers or even values as large as over a few micrometers.

• 전력전자학회논문지
• /
• 제22권4호
• /
• pp.360-368
• /
• 2017

This paper proposes the 80-kW high-efficiency bidirectional hybrid SiC boost/buck converter using droop control for DC nano-grid. The proposed converter consists of four 20-kW modules to achieve fault tolerance, ease of thermal management, and reduced component stress. Each module is constructed as a cascaded structure of the two basic bi-directional converters, namely, interleaved boost and buck converters. A six-pack hybrid SiC intelligent power module (IPM) suitable for the proposed cascaded structure is adopted for high-efficiency and compactness. The proposed converter with hybrid switching method reduces the switching loss by minimizing switching of insulated gate bipolar transistor (IGBT). Each module control achieves smooth transfer from buck to boost operation and vice versa, since current controller switchover is not necessary. Furthermore, the proposed parallel control using DC droop with secondary control, enhances the current sharing accuracy while well regulating the DC bus voltage. A 20-kW prototype of the proposed converter has been developed and verified with experiments and indicates a 99.3% maximum efficiency and 98.8% rated efficiency.

• 한국분말재료학회지
• /
• 제21권6호
• /
• pp.434-440
• /
• 2014

Silicon carbide(SiC) layer is particularly important tri-isotropic (TRISO) coating layers because it acts as a miniature pressure vessel and a diffusion barrier to gaseous and metallic fission products in the TRISO coated particle. The high temperature deposition of SiC layer normally performed at $1500-1650^{\circ}C$ has a negative effect on the property of IPyC layer by increasing its anisotropy. To investigate the feasibility of lower temperature SiC deposition, the influence of deposition temperature on the property of SiC layer are examined in this study. While the SiC layer coated at $1500^{\circ}C$ obtains nearly stoichiometric composition, the composition of the SiC layer coated at $1300-1400^{\circ}C$ shows discrepancy from stoichiometric ratio(1:1). $3-7{\mu}m$ grain size of SiC layer coated at $1500^{\circ}C$ is decreased to sub-micrometer (< $1{\mu}m$) $-2{\mu}m$ grain size when coated at $1400^{\circ}C$, and further decreased to nano grain size when coated at $1300-1350^{\circ}C$. Moreover, the high density of SiC layer (${\geq}3.19g/cm^3$) which is easily obtained at $1500^{\circ}C$ coating is difficult to achieve at lower temperature owing to nano size pores. the density is remarkably decreased with decreasing SiC deposition temperature.

• Composites Research
• /
• 제26권6호
• /
• pp.337-342
• /
• 2013

나노입자를 이용하여 강화 효과를 높이기 위해서는 고분자 기지 내부의 균일한 분산 상태를 확보하여야 한다. 또한 균일분산 조건 확보 후 균일 분산상태를 증명할 평가자료가 필요하다. 본 연구는 에폭시 수지와 SiC 나노입자를 혼합한 SiC/에폭시 복합 수지를 제조할 경우 커패시턴스 측정법을 이용한 강화재 분산도 예측 연구를 진행하였다. 커패시턴스는 전기용량을 의미하며 측정 재료의 내부 전하량과 비례한다. 기존 에폭시 수지에 비해 나노 SiC 입자를 함유할 경우 전하량이 증가되는 이론을 바탕으로 구간별 커패시턴스 측정에 따른 분산도 평가를 진행하고, 커패시턴스 분산도 예측방법에 대한 타당성을 FE-SEM과 물리적 강도 증가 방법으로 평가하였다. 소니케이션 분산 방법과 교반기 분산 방법을 이용하여 분산 방법에 따른 SiC 나노입자 분산도 상태를 비교하였다. 인장강도와 커패시턴스 간의 상관관계가 있었으며, 파단면에 대한 비교를 할 때 분산성 향상에 대한 차이를 확인할 수 있었다.

• Applied Microscopy
• /
• 제46권1호
• /
• pp.27-31
• /
• 2016

It has been investigated what kind of characteristic X-ray in electron probe micro-analyzer (EPMA) is effective for the determination of compounds of Si series materials. After comparing the characteristic X-rays among the primary and secondary lines in $K_{\alpha}$ and $K_{\beta}$ obtained from the Si series standard samples, it was found that the secondary line of $K_{\alpha}$ exhibited the most informative spectrum although the intensity was considerably weak. As a result of analyzing the spectrum shapes of the Si series standard samples, the spectrum shape of the secondary line of $K_{\alpha}$ for SiC was different from those for other Si compounds. To grasp the characteristics of the shape, a line was perpendicularly drawn from the peak top to base line in order to divide a spectrum into two areas. The area ratio of right to left was defined to call as the asymmetry index here. As a result, the asymmetry index value of the SiC was greater than one, while those of other Si compounds were less than one. It was found from the EPMA analysis that identification of SiC became successful to distinguish from other Si compounds and this method was applicable for micro-sized compounds in a practical composite material.

• Nuclear Engineering and Technology
• /
• 제48권4호
• /
• pp.1009-1014
• /
• 2016

SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ~0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ~100 MPa. The joint interface consisted of $TiSi_2$, $Ti_3SiC_2$, and SiC phases formed by a diffusion reaction of Ti and Si.