• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.217-218
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• 2000

This paper describes a formation of the Mo-silicide on Mo tip to compare the emission characteristics of the Mo tip. Cone-shaped Mo tip arrays were fabricated and silicidized by evaporating a 15nm-thick a-Si film on Mo tip arrays and annealing it in inert ambient at the temperature of $1000\;^{\circ}C$ for 60 sec. The $Mo_5Si_3$ phase of Mo-silicide was observed through X-ray diffraction (XRD) analysis. Although the gate voltage of the Mo-silicide tip increased by 38 V to obtain the current level of 20 nA/tip, the dependence of emission current on vacuum level was improved.

• Journal of the Korean Ceramic Society
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• v.56 no.5
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• pp.435-442
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• 2019

Thermoelectric is a promising technology that can convert temperature differences to electricity (or vice versa). However, their relatively low efficiencies limit their applications to thermoelectric power generation systems. Therefore, low cost and high performance are important prerequisites for the application of thermoelectric materials to automotive thermoelectric generators. Silicide-based thermoelectric materials are good candidates for such applications. Recently, the thermoelectric performances of silicide-based thermoelectric materials have been significantly improved. However, increasing the thermoelectric performance of the materials while ensuring mechanical reliability remains a challenge. This review summarizes the preparation and design guidelines for silicide-based thermoelectric nanocomposites, as well as our recent progress in the development of nanocomposites with high thermoelectric performances or high mechanical reliabilities.

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.645-651
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• 1990

Effects of excess Si on the properities of the oxide of CVD tungsten silicide were investigated by comparing the characteristics of the two kinds of thermal oxide for CVD-WSi2.7 and WSi3.1 films on the polycrystalline Si film each other. It is reveraled from AES analysis that Si in the surface region of the silicide film is consumed to make composition and resistivity of the silicide film very nonuniform for the case of the oxidation of WSi3.1, while the underlayer polycrystalline Si was consumed for the case of the oxidation of WSi2.7.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1998.10b
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• pp.21-22
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.59-60
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• 1992

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.61-62
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• 1992

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.72-72
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• 1996

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1999.04a
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• pp.35-36
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• 1999

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.619-622
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• 2005

본 논문에서는 서로 다른 Si 두께 ($T_{Si}$ = 27, 50 nm) 를 갖는 SOI (Silicon On Insulator) 기판 위에 다양한 두께의 Ni/Co를 순차적으로 증착한 후 Bulk-Si과의 비교를 통해 Silicide의 형성 특성에 대하여 분석하였다. 우선 급속 열처리 (RTP, Rapid Thermal Processing) 를 통하여 Silicide를 형성한 후 측정결과 Si두께에 따라 Silicide의 특성이 달라짐을 확인하였다. 두꺼운 두께의 Si-film을 갖는 SOI 기판을 사용한 경우 증착된 금속의 두께에 따라 Bulk-Si와 비슷한 면저항 특성을 보였으나, 얇은 두께의 Si-film을 갖는 SOI기판을 사용한 경우에는 제한된 Si의 공급으로 인한 Silicide의 비저항 증가로 인하여 증착된 금속의 두께에 따라 면저항이 감소하다가 다시 증가하는 'V' 자형 곡선을 나타내었다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.3
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• pp.332-337
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• 2006

We prepared 100 nm-thick CoNi composite silicide on a 70 nm-thick polysilicon substrate. Composite silicide laye.s were formed by rapid thermal annealing(RTA) at the temperatures of $700^{\circ}C,\;900^{\circ}C,\;1000^{\circ}C$ for 40 seconds. A Focused ion beam (FIB) was used to make nano-patterns with the operation range of 30 kV and $1{\sim}100$ pA. We investigated the change of thickness, line width, and the slope angle of the silicide patterns by FIB. More easily made with the FIB process than with the conventional polycide process. We successfully fabricated sub-100nm etched patterns with FIB condition of 30kv-30pA. Our result implies that we may integrate nano patterns with our newly proposed CoNi composite silicides.