한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Formation of Mo-Silicide on Mo Tip

  • Oh, Chang-Woo (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Kim, Yoo-Jong (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Lee, Jong-Duk (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Park, Byung-Gook (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University)
  • Published : 2000.01.13
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Abstract

This paper describes a formation of the Mo-silicide on Mo tip to compare the emission characteristics of the Mo tip. Cone-shaped Mo tip arrays were fabricated and silicidized by evaporating a 15nm-thick a-Si film on Mo tip arrays and annealing it in inert ambient at the temperature of $1000\;^{\circ}C$ for 60 sec. The $Mo_5Si_3$ phase of Mo-silicide was observed through X-ray diffraction (XRD) analysis. Although the gate voltage of the Mo-silicide tip increased by 38 V to obtain the current level of 20 nA/tip, the dependence of emission current on vacuum level was improved.

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