• 한국정밀공학회지
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• 제19권8호
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• pp.134-140
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• 2002

Chemical mechanical polishing of aluminum and photoresist using colloidal silica-based slurry was experimented. The effects of slurry pH, silica concentration, and oxidizer ($H_2O_2$) concentration on surface roughness and removal rate were studied. The optimum slurry conditions for reduction of micro-scratch were investigated. The optimum chemical mechanical polishing with the colloidal silica-based slurry was compared with conventional chemical mechanical polishing with alumina-based slurry. Chemical mechanical polishing of the aluminum with the colloidal silica-based slurry showed improved result but chemical mechanical polishing of the photoresist did not. The improved result was comparative with that of chemical mechanical polishing with filtered alumina-based slurry which one of desirable methods to reduce the micro-scratch.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.723-726
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• 2004

In this work, we have studied the CMP characteristics by mixing of original slurry and used slurry in order to investigated the possibility of recycle of used silica slurry. The removal rate and within-wafer non-uniformity (WIWNU) were measured as a function of different slurry composition. Also, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and the original slurry. Our experimental results revealed comparable removal rate and good planarity with commercial products.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권11호
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• pp.551-555
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• 2004

In this paper, in order to reduce the high COO (cost of ownership) and COC (cost of consumables), we have collected the silica abrasive powders by filtering method after subsequent CMP (chemical mechanical polishing) process for the purpose of abrasives recycling. And then, we have studied the possibility of recycle of reused silica abrasive through the analysis of particle size distribution and FE-SEM (field emission-scanning electron microscope) measurements of abrasive powders. It was annealed the collected abrasive powders to promote the mechanical strength of reduced abrasion force. Finally, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and original slurry. As our experimental results, we obtained the comparable rate of removal and good planarity with commercial products. Consequently we can expect the saving of high cost slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.109-112
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• 2003

Recently, CMP (Chemical mechanical polishing) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, COO (cost of ownership) and COC (cost of consumables) were relatively increased because of expensive slurry. In this paper, we have studied the possibility of recycle of reused silica slurry in order to reduce the costs of CMP slurry. Also, we have collected the silica abrasive powders by filtering after subsequent CMP process for the purpose of abrasive particle recycling. And then, we annealed the collected abrasive powders to promote the mechanical strength of reduced abrasion force. Finally, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and original slurry. As our experimental results, we obtained the comparable removal rate and good planarity with commercial products. Consequently, we can expect the saving of high cost slurry.

• 한국재료학회지
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• 제16권12호
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• pp.731-738
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• 2006

It is seriously considered using Al CMP (chemical mechanical planarization) process for the next generation 45 nm Al wiring process. Al CMP is known that it has a possibility of reducing process time and steps comparing with conventional RIE (reactive ion etching) method. Also, it is more cost effective than Cu CMP and better electrical conductivity than W via process. In this study, we investigated 4 different kinds of slurries based on abrasives for reducing scratches which contributed to make defects in Al CMP. The abrasives used in this experiment were alumina, fumed silica, alkaline colloidal silica, and acidic colloidal silica. Al CMP process was conducted as functions of abrasive contents, $H_3PO_4$ contents and pressures to find out the optimized parameters and conditions. Al removal rates were slowed over 2 wt% of slurry contents in all types of slurries. The removal rates of alumina and fumed silica slurries were increased by phosphoric acid but acidic colloidal slurry was slightly increased at 2 vol% and soon decreased. The excessive addition of phosphoric acid affected the particle size distributions and increased scratches. Polishing pressure increased not only the removal rate but also the surface scratches. Acidic colloidal silica slurry showed the highest removal rate and the lowest roughness values among the 4 different slurry types.

• 공업화학
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• 제10권7호
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• pp.1073-1078
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• 1999

본 연구의 목적은 소오다회 제조 공장에서 발생하는 폐슬러리를 미세 실리카가 함유된 공장 폐수의 응집제로 이용 가능한 지를 확인하고 이로부터 폐수 처리비용을 절감하고자 수행되었다. 실리카 함유 폐수를 처리하는 경우 단순히 응집 처리하는 기존의 방법과는 달리 수중에 미립자로 존재하는 실리카를 먼저 겔화(gellation)시킨 후 응집 처리하는 방법을 사용한 경우, 적은 양의 폐슬러리를 사용하여도 양호한 처리수질을 얻을 수 있어 소오다회 폐슬러리를 실리카 함유 폐수 처리를 위한 응집제로 재이용이 가능함을 확인할 수 있다. 폐수 중 실리카의 겔화를 위한 적정 pH는 5정도였으며 겔화에 의한 응집 처리시 약품 사용량의 감소와 응집 수 발생되는 슬러지 양을 감소시킬 수 있었다. 소오다회 폐슬러리로 응집시킨 플럭의 탈수성과 침강성 역시 양호한 결과를 얻을 수 있었다.

• 한국전기전자재료학회논문지
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• 제13권7호
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• pp.568-574
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• 2000

We have been optimized tungsten(W) plug CMP(chemical mechanical polishing) characteristics using two different kinds of component of slurry and two different kinds of pad which have different hardness. The comparison of oxide film roughness on around W plug after polishing has been carried out. And W plug recess for consumable sets and dishing effect at dense area according to the rate of over-polishing has been investigated. Also the analysis of residue on surface after cleaning have been performed. As a experimental result we have concluded that the consumable set of slurry A and hard pad was good for W plug CMP process. After decreasing the rate of chemical reaction of silica slurry and adding two step buffering we could reduce the expanding of W plug void however we are still recognizing to need a more development for those kinds of CMP consumables.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1296-1300
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• 2004

SnO$_2$ is one of the most suitable gas sensor materials. The microstructure and surface morphology of films must be controlled because the electrical and optical properties of SnO$_2$ films depend on these characteristics. The effects of chemical mechanical polishing(CMP) on the variation of morphology of SnO$_2$ films prepared by RF sputtering system were investigated. The commercially developed ceria-based oxide slurry, silica-based oxide slurry, and alumina-based tungsten slurry were used as CMP slurry. Non-uniformities of all slurries met stability standards of less than 5 %. Silica slurry had the highest removal rate among three different slurries, sufficient thin film topographies and suitable root mean square(RMS) values.

• 한국분말재료학회지
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• 제25권5호
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• pp.395-401
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• 2018

The improvement of dispersion stability for the primary polishing slurry in a CMP process is achieved to prevent defects produced by agglomeration of the slurry. The dispersion properties are analyzed according to the physical characteristics of each silica sol sample. Further, the difference in the dispersion stability is confirmed as the surfactant content. The dispersibility results measured by Zeta potential suggest that the dispersion properties depend on the content and size of the abrasive in the primary polishing slurry. Moreover, the optimum ratio for high dispersion stability is confirmed as the addition content of the surfactant. Based on the aforementioned results, the long-term stability of each slurry is analyzed. Turbiscan analysis demonstrates that the agglomeration occurs depending on the increasing amount of surfactant. As a result, we demonstrate that the increased particle size and the decreased content of silica improve the dispersion stability and long-term stability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.50-53
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• 2003

CMP (chemical mechanical polishing) process remained to solve several problems in deep sub-micron integrated circuit manufacturing process. especially consumables (polishing pad, backing film, slurry, pad conditioner), one of the most important components in the CMP system is the slurry. Among the composition of slurries (buffer solution, bulk solution, abrasive particle, oxidizer, inhibitor, suspension, antifoaming agent, dispersion agent), the abrasive particles are important in determining polish rate and planarization ability of a CMP process. However, the cost of abrasives is still very high. So, in order to reduce the high COO (cost of ownership) and COC (cost of consumables) in this paper, we have collected the silica abrasive powders by filtering after subsequent CMP process for the purpose of abrasive particle recycling. And then, we have studied the possibility of recycle of reused silica abrasive through the analysis of particle size and hardness. Also, we annealed the collected abrasive powders to promote the mechanical strength of reduced abrasion force. Finally, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and original slurry. As our experimental results, we obtained the comparable removal rate and good planarity with commercial products. Consequently, we can expect the saving of high cost slurry.