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http://dx.doi.org/10.4313/JKEM.2004.17.12.1296

A Study on CMP Properties of SnO2 Thin Film for Application of Gas Sensor  

Lee, Woo-Sun (조선대학교 전기공학과)
Choi, Gwon-Woo (조선대학교 전기공학과)
Kim, Nam-Hoon (조선대학교 에너지자원신기술연구소)
Park, Jin-Seong (조선대학교 신소재공학과)
Seo, Yong-Jin (대불대학교 전기전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.12, 2004 , pp. 1296-1300 More about this Journal
Abstract
SnO$_2$ is one of the most suitable gas sensor materials. The microstructure and surface morphology of films must be controlled because the electrical and optical properties of SnO$_2$ films depend on these characteristics. The effects of chemical mechanical polishing(CMP) on the variation of morphology of SnO$_2$ films prepared by RF sputtering system were investigated. The commercially developed ceria-based oxide slurry, silica-based oxide slurry, and alumina-based tungsten slurry were used as CMP slurry. Non-uniformities of all slurries met stability standards of less than 5 %. Silica slurry had the highest removal rate among three different slurries, sufficient thin film topographies and suitable root mean square(RMS) values.
Keywords
CMP(chemical mechanical polishing); $SnO_2$ thin film; Removal rate; Non-uniformity;
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  • Reference
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