Browse > Article

A Study on the Recycling of Silica Slurry Abrasives by Filtering  

Seo Yong-Jin (대불대학교 전기전자공학과)
Park Sung-Woo (대불대학교 전기전자공학과)
Lee Woo-Sun (조선대학교 전기공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.53, no.11, 2004 , pp. 551-555 More about this Journal
Abstract
In this paper, in order to reduce the high COO (cost of ownership) and COC (cost of consumables), we have collected the silica abrasive powders by filtering method after subsequent CMP (chemical mechanical polishing) process for the purpose of abrasives recycling. And then, we have studied the possibility of recycle of reused silica abrasive through the analysis of particle size distribution and FE-SEM (field emission-scanning electron microscope) measurements of abrasive powders. It was annealed the collected abrasive powders to promote the mechanical strength of reduced abrasion force. Finally, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and original slurry. As our experimental results, we obtained the comparable rate of removal and good planarity with commercial products. Consequently we can expect the saving of high cost slurry.
Keywords
CMP(Chemical Mechanical Polishing); Abrasive Particles; COO(Cost of Ownership) COC(Cost of Consumables);
Citations & Related Records
연도 인용수 순위
  • Reference
1 F. B. Kaufman, D. B. Thompson, R. E. Broadie, M. A. Jaso, W. L. Gutherie, D. J.. Pearson and M. B. Small, 'Chemical Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects', J. Electrochem. Soc., Vol. 138, No. 11, p, 3460, 1991   DOI
2 G. B. Basim, J. J. Adler, U. Mahajan, R. K. Singh, and B. M. Moudgil, 'Effect of Particle Size of Chemical Mechanical Polishing Slurries for Enhanced Polishing with Minimal Defects', J. Electrochem. Soc., Vol. 147, No. 9, p. 3523-3528, 2000   DOI
3 A. jinda, S. Hegde, S. V. Babu, 'Chemical Mechanical Polishing Using Mixed Abrasive Slurry', Electrochemical and Solid-State Letters, Vol. 5, No.4, p. G48, 2002   DOI   ScienceOn
4 H. J. Kim, D. H. Eom and J. G. Park, 'Physical and Chemical Characterization of Reused Oxide Chemical Mechanical Planarization Slurry', Jpn. J. Appl. Phys., Vol. 40, pp. 1236-1239, 2001   DOI
5 Woo-Sun Lee, Sang-Young Kim, Yong-Jin Seo, Jong-Kook Lee, 'An Optimization of Tungsten Plug Chemical Mechanical Polishing (CMP) using Different Consumables' , Journal of Materials Science, Vol. 12, No.1, p. 63-68, 2001   DOI   ScienceOn
6 Y. J. Seo, S. W. Park, S. Y. Jeong, W. S. Choi, and S. Y. Kim, 'Slurry Induced Metallic Contaminations on Different Silicate Oxides by as-deposited and Post-CMP Cleaning', Proceedings of Chemical Mechanical Planarization for ULSI Multilevel Interconnection Conference (CMF-MIC-2001), Santa Clara, CA. USA. (Mar. 5-9, 2001). pp, 287-290, 2001
7 Y. J. Seo, S. Y. Kim, W. S. Lee, 'Optimization of pre-metal dielectric(PMD) materials', Journal of Materials Science : Materials in Electronics, Vol. 12, No. 9, pp, 551-554, 2001   DOI   ScienceOn
8 B. Wihters, E. Zhao, W. Krusell, R. Jairath and S. Hosale, 'Wide Margin CMP for STI', Solite Technology, p. 173, 1998