• Journal of Korean Tunnelling and Underground Space Association
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• v.21 no.1
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• pp.93-113
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• 2019

The behavior of the 3 hinged precast arch structure was investigated by comparing field measurements with numerical analyses performed for precast lining arch structures, which are widely used for the open-cut tunnel. According to the field measurements, the maximum vertical displacement occurred at the crown with upward displacements during the backfilling up to the crown of the arch and downward displacements at the backfill height above the crown. The final crown displacement was 19 mm upward from the original position. The horizontal displacement at the sidewall, which had a maximum horizontal displacement, occurred inward of the arch when compacting the backfill up to the crown and returned to the original position after completing the backfill construction. According to the analysis of displacement measurements, economical design is expected to be possible for precast arch structures compared to rigid concrete structures due to ground-structure interactions. Duncan model gave good results for the estimation of displacements and deformed shape of the tunnel according to the numerical analyses comparing with field measurements. The earth pressure coefficients calculated from the numerical analyses were 0.4 and 0.7 for the left and the right side of the tunnel respectively, which are agreed well with the eccentric load acting on the tunnel due to topographical condition and actual field measurements.

• The Journal of Sustainable Design and Educational Environment Research
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• v.19 no.4
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• pp.60-69
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• 2020

This research is a preliminary study to find out the module of 20 students in a classroom. This research investigated the widths of passages in the 30 classrooms of 5 elementary schools in Namyangju City, Korea. The conclusions were as follows: First, the area of unit for 1 student was 650 (W) × 950 (D). Second, the desk placements for most classrooms were one-way types (87%), and group-study types constituted 13%. Third, the width between the blackboard and the very front desk was 2.17 m. The width of passage between the very back seat and the backside lockers was 1.32 m. The width of passage between the sidewall and the nearby desk was 0.8 m. The width of passage between the window and the nearby desk was 0.8 m. The average widths of 2 vertical passages between the desks were respectively 0.67 m and 0.68 m. Fourth, the area of the teacher was 2.1-2.25 m × 2.16 m = 4.5-4.8 ㎡.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.1
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• pp.49-54
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• 2022

The copper plating process used to fabricate the submicron damascene pattern of Cu wiring for Si wafer was applied to the plating of a PCB pattern of several tens of microns in size using the same organic additives and current density conditions. In this case, the non-uniformity of the plating thickness inside the pattern was observed. In order to quantitatively analyze the cause, a numerical calculation considering the solution flow and electric field was carried out. The calculation confirmed that the depletion of Cu²⁺ ions in the solution occurred relatively earlier at the bottom corner than the upper part of the pattern due to the plating of the sidewall and the bottom at the corner of the pattern bottom. The diffusion coefficient of Cu²⁺ ions is 2.65 10^-10 m²/s, which means that Cu²⁺ ions move at 16.3 ㎛ per second on average. In the cases of small damascene patterns, the velocity of Cu²⁺ ions is high enough to supply sufficient ions to the inside of the patterns, while sufficient time is required to replenish the exhausted copper ions in the case of a PCB pattern having a size of several tens of microns. Therefore, it is found that the thickness uniformity can be improved by reducing the current density to supply sufficient copper ions to the target area.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.43 no.1
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• pp.21-32
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• 2023

Interrill erosion dominates in forest areas, and the erosion rate in surface-disturbed areas is significantly increased by the development and expansion of rill. In this study, soil erosion experiments using simulated rainfall and inflow were performed to understand the development and the micromorphological changes of rill on steep slopes. The characteristic factors of the micromorphology, such as the rill cross section, rill volume, rill density, rill order, and rill sharpness, were analyzed according to steepness and location (upper or lower) of slope. The head-cut of the simultaneous incised rills by rainfall simulation moved rapidly upslope, and the randomly developed rills expanded deeply and widely with their connection. The rill cross section evolved to downslope gradually increased. The rill volume occupied about 78 % of the sediment volume, confirming that the contribution of the sediment from the rill erosion is greater than that of the interrill erosion. Although the rate of increase in rill order slowed as the slope increased, the total length and density of the rill generally increased. As the slope increased from 15° to 20°, the bed incision of rills became larger than the sidewall expansion, and the rill sharpness increased by 1.6 times. The runoff coefficient on the lower slope decreased by 12.3 % than that on the upper slope. It was evaluated that the subsoil exposures and formation changes by the rill expansion increased the infiltration rate. Although the sediment accompanying the rills generally increased with slope increase, it was directly influenced by the hydraulic velocity of enhanced rill with the local convergence and expansion in the process of the rill evolution.

• Journal of Korean Tunnelling and Underground Space Association
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• v.11 no.2
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• pp.199-211
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• 2009

Development of underground space is actively performed globally for better life in the surface, and the scale of the space is increasing. Extreme care should be taken in the construction of the underground space in urban areas in order to avoid damage of adjacent structures and interference with existing underground space. In case of shallow tunnels, reinforcement of ground and structures is necessary to minimize the damage to structures due to excavation but any standard for optimum range of the reinforcement has not been established yet. In this paper, a series of numerical analyses have been performed for a 20 m diameter tunnel excavated underneath a structure to investigate the degree of damage of the structure according to vertical and horizontal spacing between the tunnel and structure. In addition to that, optimum range of reinforcement is presented for each case where reinforcement is required. It has been observed that the reinforcement is necessary for the ground condition adapted in the analyses as follows: (1) if horizontal spacing ($S_{H}$) approaches to 0D (D: equivalent diameter of tunnel) for vertical spacing (Sv) of 0.5D, and (2) if tunnel exists underneath the structure for vertical spacing (Sv) of 0.75D. The reinforcement is not necessary for Sv of 10 regardless of $S_{H}$. It also has been obtained that the optimum ranges of the reinforcement around structure foundation are 7 m in depth and whole width of the structure and 5 m beyond tunnel sidewall. These reinforcememt ranges have been confirmed to be enough for stability of the structure if types of reinforcement method is appropriately selected.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.161-165
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• 2005

We investigated selective dry etching of GaAs over AlGaAs and InGaP in high density planar inductively coupled $BCl_3/SF_6$ plasmas. The process parameters were ICP source power (0-500 W), RE chuck power (0-30W) and gas composition $(60-100\%\;BCl_3\;in\;BCl_3/SF_6)$. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching. $BCl_3/SF_6$ selective etching of GaAs showed quite good results in this study. Selectivities of GaAs $(GaAs:AlGaAs\~36:1,\;GaAs:InGaP\~45:1)$ were superior at $18BCl_3/2SF_6$, 20 W RF chuck power, 300 W ICP source power and 7.5 mTorr. Addition of $(5-15\%)SF_6\;to\;BCl_3$ produced relatively high selectivities of GaAs over AlGaAs and InGaP during etching due to decrease of etch rates of AlGaAs and InGaP (boiling points of etch products: $AlF_3\~1300^{\circ}C,\;InF_3>1200^{\circ}C$ at atmosphere) at the condition. SEM and AFM data showed slightly sloped sidewall and somewhat rough surface$(RMS\~9nm)$. XPS study on the surface of processed GaAs proved a very clean surface after dry etching. It shows that planar inductively coupled $BCl_3/SF_6$ plasmas could be a good candidate for selective dry etching of GaAs over AlGaAs and InGaP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• Food Science and Preservation
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• v.15 no.1
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• pp.49-57
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• 2008

This study was conducted to develop an optimal composite recipe for a cookie including yam powder that would be attractive to all age groups. Wheat flour was partially substituted by yam powder to reduce the content of wheat flour. This study has produced the sensory optimal composite recipe by making cookies, respectively with each 5 level of yam powder $(X_1)$, Sugar$(X_2)$, butter$(X_3)$, by C.C.D (Central Composite Design) and conducting sensory evaluation and instrumental analysis by means of RSM (Response Surface Methodology). Sensory items showed very significant values in color, softness, overall quality (p<0.01), flavor (p<0.05) and those of instrumental analysis showed significant values in lightness, redness (p<0.05), spread ratio, hardness (p<0.01). Also sensory optimal ratio of yam cookie was calculated at yam powder 37.35 g, sugar 50.75 g, butter 78.40 g and it was revealed that the factors of influencing yam cookie aptitude were in older of yam powder, butter, sugar.