• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.463-473
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• 2023

In recent years, the transparent amorphous oxide thin film transistor represented by indium-gallium-zinc-oxide (IGZO) has become the first choice of the next generation of integrated circuit control components. This article contributes an overview of IGZO thin-film transistors (TFTs), including their fundamental principles and recent advancements. The paper outlines various TFT structures and places emphasis on the fabrication process of the active layer. The result showed that the size of the active layer including the length-to-width ratio and the width could have a significant effect on the mobility. And the process of TFT could influence the crystal structure of IGZO thin film. Furthermore, the article presents an overview of recent applications of IGZO TFTs, such as their use in display drivers and TFT memories. At last, the future development of IGZO TFT is forecasted in this paper.

• 센서학회지
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• 제6권5호
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• pp.407-413
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• 1997

기판온도 $300^{\circ}C$에서 열증착법에 의해 p형 <100> Si 기판위에 CuPc(Copper Phthalocyanine) 결정 박막을 증착하였다. X선 회절분석으로부터 CuPc 박막은 a-축 방향으로 성장하였음을 알 수 있었다. CuPc분자들이 기판면위에 수직인 CuPc/Si박막의 광전특성을 조사하기 위하여 수직방향의 전류-전압 (I-V) 특성을 기판 Si의 특성과 비교 관찰하였다. 저항성 접촉을 위해 기판인 p형 Si위에 전극으로 Au를 증착시켰다. Au/Si 접합에 빛을 조사한 결과 전류는 증가하지만 광기전력효과는 관찰되지 않았다. p형 반도체인 CuPc 박막과 기판 p-Si의 접합은 장벽을 형성하지 않기 때문에 빛을 조사하지 않았을 때의 I-V 특성은 저항성을 나타낸다. 빛을 조사하였을 때 CuPc/Si 접합의 증가된 광전류는 Si 웨이퍼보다 현저하게 큰 것을 알 수 있다. 따라서 CuPc 층이 600 nm 파장에서의 붉은 빛을 현저하게 흡수하여 광전류에 기여하는 다량의 광캐리어를 형성함을 알 수 있다. CuPc/Si 박막은 $J_{sc}$ (short-circuit photocurrent) $4.29\;mA/cm^{2}$와 $V_{oc}$ (open circuit photovoltage) 12 mV의 광기전력 특성을 보여준다.

• E2M - 전기 전자와 첨단 소재
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• 제7권6호
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• pp.511-519
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• 1994

The effect of the deposition conditions, such as the base pressure, working pressure, sputtering power, pre-sputtering, and deposition thickness in facing targets sputtering system(FTS), on the oxidation of the TbFeCo thin films was studied by investigating the magneto-optical properties as well as oxygen analysis by the AES depth profiles. The results showed that the base pressure did not affect the magnetic properties so much, probably due to the short flight distance of the sputtered particles. At the higher sputtering power and lower working pressure with pre-sputtering the oxidation of TbFeCo thin films was decreased. As the film thickness increased the TbFeCo thin films showed the perpendicular anisotropy from in-plane anisotropy overcoming the oxidation effect at the beginning of the sputtering.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2002년도 춘계학술대회 논문집
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• pp.16-21
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• 2002

Generally, Oxidization film are generated by friction and wear in lubricant oil. It is effect that the heat and pressure act on contact area. Because the electrons movement progress the oxidization, if the electrons movement be regulated, the thickness of oxidization film can be regulated and friction characteristics can be improved. But electronic current can deteriorate friction characteristics, so various characteristics must be investigated on transforming of electronic current. Therefor, using the Norton equation, short current were transformed between ball and disk. Also, an experiment was carried out using ball on disk type tester. So, we studied up on effect of current for friction characteristics.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 제35회 춘계학술대회
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• pp.150-155
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• 2002

Generally, Oxidization film are generated by friction and wear in lubricant oil. It is effect that the heat and pressure act on contact area. Because the electrons movement progress the oxidization, if the electrons movement be regulated, the thickness of oxidization film can be regulated and friction characteristics can be improved. But electronic current can deteriorate friction characteristics, so various characteristics must be investigated on transforming of electronic current. Therefor, using the Norton equation, short current were transformed between ball and disk. Also, an experiment was carried out using ball on disk type tester. So, we studied up on effect of current for friction characteristics.

• Macromolecular Research
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• 제9권1호
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• pp.1-19
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• 2001

Poly(p-phenylene pyromellitimide) and poly(4,4'-biphenylene pyromellitimide) are representatives of fully rod-like polyimides. Their structure and properties in thin films are reviewed. The polymers exhibit some excellent properties such as high molecular packing coefficient, high mechanical modulus, and low thermal expansion coefficient, and low interfacial stress, so that they are very attractive to both industry and academia. However, these polymers are very brittle and thus practically useless. Some chemical modifications to improve such drawback with a little sacrifice of the high modulus are described: i) incorporation of short side groups into the polymer backbone and ii) insertion of proper linkages into the polymer backbone.

• Tribology and Lubricants
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• 제16권2호
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• pp.75-83
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• 2000

The present paper proposes a new type of an electro-rheological squeeze film damper (ER SFD) of which the damping capacity can be controlled by the application of electric field. The new ER .SFD- is sealed with slotted rings having electrodes at the inside of the constant gap. The ER SFD can provent the problem of electric short which might be occurred in a previous ER SFD. Reynolds lubrication equation for a Newtonian fluid and the end leakage equation for ER fluids are numerically solved to get the pressure distributions and the damping coefficients of the ER SFD. The results show that the damping coefficients greatly increase with increasing the yield shear stress of ER fluid. In addition, the unbalance response analysis of a flexible rotor supported on the new ER SFD implies that the rotor system can be operated with the minimum of rotor amplitude and force transmissibility by controlling the yield shear stress of ER fluids properly.

• Journal of Electrical Engineering and Technology
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• 제9권6호
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• pp.2079-2088
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• 2014

In this paper, we propose new physically based threshold voltage models for short channel Surrounding Gate Silicon Nanowire Transistor with two different geometries. The model explores the impact of various device parameters like silicon film thickness, film height, film width, gate oxide thickness, and drain bias on the threshold voltage behavior of a cylindrical surrounding gate and rectangular surrounding gate nanowire MOSFET. Threshold voltage roll-off and DIBL characteristics of these devices are also studied. Proposed models are clearly validated by comparing the simulations with the TCAD simulation for a wide range of device geometries.

• Journal of the Optical Society of Korea
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• 제18권6호
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• pp.799-808
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• 2014

The mechanism of optical interaction of two nanoholes, milled in an opaque gold film, by means of surface plasmon polariton (SPP) propagation is investigated. The interaction depends on the polarization direction of the incident light when the nanohole pair is illuminated through uniform single antenna excitations. It is shown that by illuminating one of the nanoholes, under single antenna excitation, the other nanohole can be excited indirectly via propagated SPPs from the excited nanohole. In addition, it is found that the spectrum of electromagnetic power above the surface of the metallic film at an arbitrary point along the axis of the nanohole pair presents two resonant peaks. These peaks are due to the optical interaction between nanoholes, where the short- and long-wavelength peaks can be assigned to in-phase and antiphase interactions of magnetic dipoles relative to each nanohole, respectively. The magnetic coupled dipole approximation (MCDA) method confirms the simulation results.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2002년도 추계학술대회논문초록집
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• pp.342.1-342
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• 2002

In this work, the dynamic characteristics of an oil-lubricated, short SFD with a central feeding groove are derived based on a theoretical analysis considering the effect of a groove. The validity of the analysis is investigated experimentally using an Active Magnetic Bearing (AMB) system as an exciter. For the theoretical solution, the fluid film forces of a grooved SFD are analytically derived so that the dynamic coefficients of a SFD are expressed in terms of its design parameters. (omitted)