• Tribology and Lubricants
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• v.33 no.3
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• pp.106-111
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• 2017

Sapphire is an anisotropic material with excellent physical and chemical properties and is used as a substrate material in various fields such as LED (light emitting diode), power semiconductor, superconductor, sensor, and optical devices. Sapphire is processed into the final substrate through multi-wire saw, double-side lapping, heat treatment, diamond mechanical polishing, and chemical mechanical polishing. Among these, chemical mechanical polishing is the key process that determines the final surface quality of the substrate. Recent studies have reported that the material removal characteristics during chemical mechanical polishing changes according to the crystal orientations, however, detailed analysis of this phenomenon has not reported. In this work, we carried out chemical mechanical polishing of C(0001), R($1{\bar{1}}02$), and A($11{\bar{2}}0$) substrates with different sapphire crystal planes, and analyzed the effect of crystal orientation on the material removal characteristics and their correlations. We measured the material removal rate and frictional force to determine the material removal phenomenon, and performed nano-indentation to evaluate the material characteristics before and after the reaction. Our findings show that the material removal rate and frictional force depend on the crystal orientation, and the chemical reaction between the sapphire substrate and the slurry accelerates the material removal rate during chemical mechanical polishing.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.12
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• pp.174-181
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• 2004

Ultra precision positioning mechanism has widely been used on semiconductor manufacturing equipments, optical spectrum analyzer and cell manipulations. Ultra precision positioning mechanism is consisted of several actuators, sensors, guides and control systems. Its efficiency depends on each performance of components. The object of this study is to design, analysis and manufacture all of the inchworm linear motor system, which is one of the equipments embodied in ultra precision positioning mechanism. Inchworm linear motor system is consisted of a controller system and an inchworm linear motor, and its driving form is similar to a motion of spanworm. A design and manufacture of inchworm linear motor, which is consisted of three PZT actuators, a rod, two columns and a guide plate, are performed. Minimizing the von-Mises stress of the hinge using Taguchi method and simulation by FEM software optimizes the structural design in a column of flexure hinge. The designed columns and guide plates are manufactured by a W-EDM and NC-milling. A controller system, which is an apparatus to drive inchworm linear motor, can easily adjust driving conditions by varying resonance frequency and input-output voltage of actuators and amplifiers. The performance of manufactured inchworm linear motor system is verified and valuated. In the future, inchworm linear motor system will be used to make a more precision positioning by reinforcing a sensor and feedback system.

• Journal of Sensor Science and Technology
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• v.28 no.6
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• pp.402-406
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• 2019

Recently, semiconducting organic materials have been spotlighted as next-generation electronic materials based on their tunable electrical and optical properties, low-cost process, and flexibility. However, typical organic semiconductor materials are vulnerable to moisture and oxygen. Therefore, an encapsulation layer is essential for application of electronic devices. In this study, SiN_x thin films deposited at process temperatures below 150 ℃ by plasma-enhanced chemical vapor deposition (PECVD) were characterized for application as an encapsulation layer on organic devices. A single structured SiN_x thin film was optimized as an organic light-emitting diode (OLED) encapsulation layer at process temperature of 80 ℃. The optimized SiN_x film exhibited excellent water vapor transmission rate (WVTR) of less than 5 × 10^-5 g/㎡·day and transmittance of over 87.3% on the visible region with thickness of 1 ㎛. Application of the SiN_x thin film on the top-emitting OLED showed that the PECVD process did not degrade the electrical properties of the device, and the OLED with SiN_x exhibited improved operating lifetime

• Journal of Sensor Science and Technology
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• v.10 no.3
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• pp.196-206
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• 2001

Real temperature profiles of a planar chromel-alumel mutli-junction thermal converter(TC 1) were measured by thermal image. Temperature profiles as a function of input power of thermal converters(TC 1${\sim}$TC 6) were simulated by 3-dimensional ANSYS program based on finite element method. Temperature difference between the hot junction and the cold junction for TC 1 was smallest and largest for TC 6 and correspondingly, he voltage response for TC 1 and TC 6 showed the smallest value of 3.09 mV/mW and the largest value of 4.03 mV/mW, respectively.

• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.12-21
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• 2004

Error control is one of major concerns in many electronic systems. Experience shows that most malfunctions during system operation are caused by transient faults, which often mean abnormal signal delays that may result in violations of circuit element timing constraints. This paper presents a novel CMOS-based concurrent timing error detector that makes a flip-flop to sense and then signal whether its data has been potentially corrupted or not by a setup or hold timing violation. Designed circuit performs a quiescent supply current evaluation to determine timing violation from the input changes in relation to a clock edge. If the input is too close to the clock time, the resulting switching transient current in the detection circuit exceeds a reference threshold at the instant of the clock transition and an error is flagged. The circuit is designed with a $0.25{\mu}m$ standard CMOS technology at a 2.5 V supply voltage. The validity and effectiveness are verified through the HSPICE simulation. The simulation results in this paper shows that designed circuit can be used to detect setup and hold time violations effectively in clocked circuit element.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.613-617
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• 2001

The test items like as endurance, air leakage and oil endurance test is requested for reliability evaluation about O-ring which is a kind of core machinery accessories of semi-conduct manufacturing equipment. For verification of these, we design and manufactured a test system for endurance, air leakage and oil endurance of O-ring for semi-conduct manufacturing equipment, and also performed the test for two kinds of O-ring, as it were Viton and Kalretz. The characteristics of this test equipment consist in realization of the test conditions of semi-conduct manufacturing equipment and satisfying the test method. The test conditions are cut gas, vacuum grade, temperature and revolution numbers in the endurance test system, vacuum grade and temperature in the air leakage test system, temperature and time in the oil endurance test system. The separating test results for wearing which is an oil endurance test item, the wearing index of domestic produced Viton O-ring is higher than foreign product by 2%, wearing rate of Kalretz O-ring better than Viton O-ring by 17%, and particles existed in various place. The test result of air leakage which is measured through the RGA sensor used Helium, the vacuum grade was $10^-3$Torr. And the test result of oil endurance, the volume change rate was 7~15%. Hereafter, we intend to analysis the reliability test evaluation and to utilize for domestic manufacturing companies by establishing data base and developing reliability softwares.

• Journal of the Korean Ceramic Society
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• v.22 no.4
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• pp.54-60
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• 1985

Gas sensing materials for detecting flammable gases such as $CH_4$, $C_3H_8$ and n-$C_4H_{10}$ were developed by util-izing $In_2O_3$ as the principal sensing material. The sensing materials were formulated by mixing $In_2O_3$ powder with one or two other chemicals such as $SnO_2$, $Y_2O_3$ and $Al_2O_3$ with a small addition of $PdCl_2$ as a catalyst. Sample of sensor were fabricated by coating each of the mixtures on a ceramic tube impregnating ethylsili-cate and firing at 75$0^{\circ}C$ Each material mixture was evaluated by measuring and comparing gas sensitivity(resistance in air/resistance with gas) to flammable gases such as $CH_4$, $C_3H-8$ and n-$C_4H_{10}$. It was found that among fifteen compositions tested three compositions as follows show the highest gas sensitivity and thus are very feasible for commercialization as the gas sensors ; o49.5 $In_2O_3$+50 Al2O3_0.5 PdCl2(wt%) o $20In_2O_3+29$ $SnO_2+50$ $Al_2O_3+1$ $PdCl_2$(wt%) o40 $In_2O_3$+9 $Y_2O_3+50$ $Al_2O_3+1$ $PdCl_2$(wt%)

• Journal of the Korean Society of Marine Environment & Safety
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• v.14 no.1
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• pp.39-43
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• 2008

It is generally recognized that monitering of bio-molecules, which are related to the ocean environment, becomes more important. So far, for the detection of the bio-molecules, ocean samples were brought to laboratory to be analyzed using a complicate and expensive measuring system The "ship and dip" method takes a relatively long time to complete a analysis cycle and causes significant errors due to the time difference between the analysis processes. In order to overcome the drawbacks, developments of sensors for the detection of bio-molecules were suggested using nano-technology, such as nano-spintronic device, carbon nano tube device, and nano-semiconductors. The pros and cons of the technology were examined and reinvestigated to overcome the technical problems in the application to real sensors.

• Korean Journal of Optics and Photonics
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• v.28 no.2
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• pp.75-82
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• 2017

We present a new type of receiver-transmitter optical system that can be adapted to the sensor head of a displacement-measuring interferometer. The interferometer is utilized to control positioning error and repetition accuracy of a wafer, down to the order of 1 nm, in a semiconductor manufacturing process. Currently, according to the tendency of scale-up of wafers, an interferometer is demanded to measure a wider range of displacement. To solve this technical problem, we suggest a new type of receiver-transmitter optical system consisting of a GRIN lens-Collimating lens-Afocal lens system, compared to conventional receiver-transmitter using a single collimating lens. By adapting this new technological optical structure, we can improve coupling efficiency up to about 100 times that of a single conventional collimating lens.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.