• 반도체디스플레이기술학회지
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• 제14권2호
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• pp.35-40
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• 2015

This paper presents the sensorless position control of the Permanent Magnet Synchronous Motor (PMSM) using stator flux estimation and Phase Lock Loop (PLL). The field current and the torque current are required in order to perform the vector control of the PMSM. At this time, it is necessary for the torque to know the exact position of the magnetic flux generated by the permanent magnet, because the torque must be applied torque current in the direction orthogonal to the permanent magnet. In general the speed of the PMSM is controlled by using a magnetic position sensor. However, this paper, we estimates the stator flux by using the PLL method without the magnetic position sensor. This method is simple and easy, in addition it has the advantage of a stabile estimation of the rotor. Finally the proposed algorithm was confirmed by experimental results and showed the good performance.

• 한국산학기술학회논문지
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• 제6권5호
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• pp.373-377
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• 2005

본 논문에서는 반도체 제조장비의 챔버 내부 가스누출을 방지하기위한 보완모듈을 제시하였다. MFC(mass flow controller) 다음단의 최종밸브와 챔버 사이의 가스관에 압력센서를 부착시켜, 압력센서의 신호와 최종밸브의 동작신호를 디지털 회로를 이용하여 실시간으로 감지하고 가스누출을 방지하도록 하였다. LED 모듈을 이용하여 공정중에 발생하는 2차 소성물로 인한 가스의 흐름과 관련된 시스템 고장을 표시한다. 본 연구에서 개발한 모듈을 이용하면 챔버 내에서의 가스누출로 인한 장비의 손상과 안전사고 등을 예방하는 효과가 있다.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.125-128
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• 2012

We fabricated the electrolyte-insulator-semiconductor (EIS) devices with various high-k sensing membranes to realize a high quality pH sensor. The sensing properties of each high-k dielectric material were compared with those of conventional $SiO_2$ (O) and $SiO_2/Si_3N_4$ (ON) membranes. As a result, the high-k sensing membranes demonstrated better sensitivity and stability than the O and ON membranes. Especially, the $SiO_2/HfO_2$ (OH) stacked layer showed a high sensitivity and the $SiO_2/Al_2O_3$ (OA) stacked layer exhibited an excellent chemical stability. In conclusion, the high-k sensing membranes are expected to have excellent operating characteristics in terms of sensitivity and chemical stability for the biosensor application.

• 마이크로전자및패키징학회지
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• 제20권4호
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• pp.35-39
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• 2013

반도체센서의 응력에 따른 전기적 특성을 프로브 스테이션 위에서 측정하기 위해 소형 4점 굽힘 장치를 개발하였다. 4점 굽힘 장치는 $60{\times}83mm^2$의 면적을 갖는 소형 장치로 마이크로미터를 통해 정확한 변위를 인가함으로서 가해진 응력을 구할 수 있다. 유한요소해석법을 사용하여 기기의 오차를 예측하고 정밀도를 향상하였다. 실험적으로는 4점 굽힘 장치로 인가된 응력을 검증하기 위해 스트레인 게이지로 검증하였다.

• 에너지공학
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• 제19권1호
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• pp.21-24
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• 2010

본 연구에서는 금속 전극사이에 팔라듐 나노선을 성장시키기 위해 직류와 이중전기영동 방법을 이용한 전기화학적 방법을 제안하였다. 팔라듐 나노선의 최적 성장 조건들을 파악하기 위해 교류의 인가 주파수 및 전압의 영향들이 조사되었다. 합성된 팔라듐 나노선들은 수백 나노미터의 직경과 $8\;{\mu}m$ 길이를 갖고 있으며, $1\;k{\Omega}$의 우수한 전기적 저항 특성을 보였다. 최종적으로 완성된 팔라듐 나노선들은 상온에서 수소 농도 100 ppm에서 2500 ppm의 범위에서 수소검출 평가를 수행하였으며, 수소센서에 적합한 우수한 검출 감도 및 응답시간을 보였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권2호
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• pp.104-110
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• 2011

A CMOS Image Sensor (CIS) mounted on mobile appliances requires low power consumption due to limitations of the battery life cycle. In order to reduce the power consumption of CIS, we propose novel power reduction techniques such as a data flip-flop circuit with leakage current elimination and a low power single slope analog-to-digital (A/D) converter with a sleep-mode comparator. Based on 0.13 ${\mu}m$ CMOS process, the chip satisfies QVGA resolution (320 ${\times}$ 240 pixels) that the cell pitch is 2.25 um and the structure is a 4-Tr active pixel sensor. From the experimental results, the performance of the CIS has a 10-b resolution, the operating speed of the CIS is 16 frame/s, and the power dissipation is 25 mW at a 3.3 V(analog)/1.8 V(digital) power supply. When we compare the proposed CIS with conventional ones, the power consumption was reduced by approximately 22% in the sleep mode, and 20% in the active mode.

• 센서학회지
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• 제28권1호
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• pp.23-29
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• 2019

A copper tetracumylphenoxy phthalocyanine (CuPccp) thin film was formed on an organic insulator film by Langmuir-Blodgett (LB) deposition for gas sensor fabrication. To increase the reproducibility of film transfer, stearyl alcohol was used as a transfer promoter. The structural properties of the CuPccp layers were optically monitored through attenuated total reflection and polarization-modulated ellipsometry techniques. The average thickness of a single layer of the CuPccp LB film was measured to be 2.5 nm. Despite the role of the transfer promoter, the stability of the layer transfer was not sufficient to ensure homogeneity of the LB film. This was probably due to the presence of aggregates in the molecular structure of the CuPccp LB film. Nevertheless, copper phthalocyanine polymorphism can be greatly suppressed by the LB arrangement, which appears to contribute to the improvement of electrical conductivity. The p-type semiconductor characteristics were confirmed by Hall measurements from the CuPccp LB films.

• Nuclear Engineering and Technology
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• 제51권1호
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• pp.293-302
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• 2019

Many researches have been done to develop and improve the performance of personal (individual) dosimeter response to cover a wide of neutron energy range (from thermal to fast). Depending on the individual category of the dosimeter, the semiconductor sensor has been used to simplify and lightweight. In this plan, it's very important to have a fairly accurate counting of doses rate in different energies. With a general design and single-sensor simulations, all optimal thicknesses have been extracted. The performance of the simulation scheme has been compared with the commercial and laboratory samples in the world. Due to the deviation of all dosimeters with a flat energy response, in this paper, has been used an idea of one semi-conductor sensor to have the flat energy-response in the entire neutron energy range. Finally, by analyzing of the sensors data as arrays for the first time, we have reached a nearly flat and acceptable energy-response. Also a comparison has been made between Lucite-PMMA ($H_5C_5O_2$) and polyethylene-PE ($CH_2$) as a radiator and $B_4C$ has been studied as absorbent. Moreover, in this paper, the effect of gamma dose in the dosimeter has been investigated and shown around the standard has not been exceeded.

• 방송과미디어
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• 제5권1호
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• pp.59-71
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• 2000

This paper presents a survey of the CMOs-based image sensor and its applications to various real field digital camera. CMOS image sensor, called active pixel sensor (APS), has many interesting properties such ash I회 sensitivity, high speed readout, random access and lower power consumption when it is compared with CCd. this paper also addresses the state-of-the-art of CMOS image sensor, and gives some examples of its application to digital camera and special-purpose cameras. with the advancement of semiconductor technology, CMOS image sensor is a future technology for imaging system, and will be widely used in the filed of image capturing for consumer electronics and scientific measurements.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.79-80
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• 2002