• Journal of the Korean Institute of Intelligent Systems
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• v.14 no.5
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• pp.648-654
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• 2004

The Mass Flow Controller(MFC) has become crucial in semiconductor manufacturing equipments. It is an important element because the quality and the yield of a semiconductor process are decided by the accurate flow control of gas. Therefore, the demand for implementing the high speed and the highly accurate control of MFCs has been increasing. It is hard to find an article of the control algorithm applied to MFCs. But, it is known that commercially available MFCs adopt PID control algorithms. Particularly, when the system detects the flow by way of heat transfer, the MFC control problem includes the slow response and the nonlinearity. In this paper, MFC control algorithm with a superior performance to the conventional PID algorithm is discussed and the superiority is demonstrated through the experiment. A fuzzy controller was utilized in order to compensate the nonlinearity and the slow response, and the performance is compared with that of an MFC currently available in the market. The control system, in this paper, consists of a personal computer, the data acquisition board and the control algorithm carried out by LabWindows/CVI program on the PC. In addition, a method of estimating the actual flow from the sensor output with the slow response is presented. In conclusion, according to the result of the experiment, the proposed algorithm shows better accuracy and is faster than the conventional controller.

• Journal of the Korean Society of Safety
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• v.32 no.2
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• pp.34-37
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• 2017

In recent emerging industry, Display field becomes bigger and bigger, and also semiconductor technology becomes high density integration. In Flat Panel Display, there is an issue that electrostatic phenomenon results in fine dust adsorption as electrostatic capacity increases due to bigger size. Destruction of high integrated circuit and pattern deterioration occur in semiconductor and this causes the problem of weakening of thermal resistance. In order to solve this sort of electrostatic failure in this process, Soft X-ray ionizer is mainly used. Soft X-ray Ionizer does not only generate electrical noise and minute particle but also is efficient to remove electrostatic as it has a wide range of ionization. X-ray Generating efficiency has an effect on soft X-ray Ionizer affects neutralizing performance. There exist variable factors such as type of anode, thickness, tube voltage etc., and it takes a lot of time and financial resource to find optimal performance by manufacturing with actual X-ray tube source. MCNPX (Monte Carlo N-Particle Extended) is used for simulation to solve this kind of problem, and optimum efficiency of X-ray generation is anticipated. In this study, X-ray generation efficiency was measured according to target material thickness using MCNPX under the conditions that tube voltage is 5 keV, 10 keV, 15 keV and the target Material is Tungsten(W), Gold(Au), Silver(Ag). At the result, Gold(Au) shows optimum efficiency. In Tube voltage 5 keV, optimal target thickness is $0.05{\mu}m$ and Largest energy of Light flux appears $2.22{\times}10^8$ x-ray flux. In Tube voltage 10 keV, optimal target Thickness is $0.18{\mu}m$ and Largest energy of Light flux appears $1.97{\times}10^9$ x-ray flux. In Tube voltage 15 keV, optimal target Thickness is $0.29{\mu}m$ and Largest energy of Light flux appears $4.59{\times}10^9$ x-ray flux.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.39 no.4
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• pp.301-307
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• 2015

The diameter of a proton beam emanating from the MC-50 cyclotron is about 2-3 mm with Gaussian distribution. This widely irradiated proton beam is not suitable for semiconductor etching, precise positioning, and micromachining, which require a small spot. In this study, a beam cutting method using a microhole is proposed as an economical alternative. We produced a microhole with aspect ratio, average diameter, and thickness of 428, $21{\mu}m$, and 9 mm, respectively, for cutting the proton beam. By using this high-aspect-ratio microhole, we conducted machinability tests on microstructures with sizes of tens of ${\mu}m$. Additionally, the results of simulation using GEANT4 and those of the actual experiment were compared and analyzed. The outcome confirmed the possibility of implementing a micro process technology for the fabrication of three-dimensional microstructures of 20 micron units using the MC-50 cyclotron with the microhole.

• The Journal of the Convergence on Culture Technology
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• v.4 no.3
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• pp.287-291
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• 2018

The CNTFET, which is attracting attention as a next-generation semiconductor device, can obtain ballistic or near-ballistic transport at a lower voltage than that of conventional MOSFETs by depositing CNTs between the source and drain of the device. In order to increase the performance of the CNTFET, a large number of CNTs must be deposited at a high density in the CNTFET. Thus, various manufacturing processes to increase the density of the CNTs have been developed. Recently, the Directional Shrinking Transfer Method was developed and showed that the current density of the CNTFET device could be increased up to 150 uA/um. So, this method enhances the possibility of implementing a CNTFET-based integrated circuit. In this paper, we will discuss how to evaluate the performance of the CNTFET device compared to a MOSFET at the circuit level when the CNTFET is fabricated by the Directional Shrinkage Transfer Method.

• Journal of Korean Society for Atmospheric Environment
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• v.20 no.5
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• pp.625-632
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• 2004

Perfluorocompounds ($PFC_s$), such as tetrafluoromethane ($CF_4$) and hexafluoroethane ($C_2F_6$), have been widely used as plasma etching and chemical vapor deposition (CVD) gases for semiconductor manufacturing processes. Since these $PFC_s$ are known to cause a greenhouse effect intensively, there has been a growing interest in reducing $PFC_s$ emissions. Among various $CF_4$ decomposing techniques, a dielectric barrier discharge (DBD) is considered as one of a promising candidate because it has been successfully used for generating ozone ($O_3$) and decomposing nitrogen oxide (NO). Firstly, optimal concentration of oxygen for $CF_4$ decomposition was found to figure out how many primary and secondary reactions are associated with DBD process. Secondary, to find effective discharge method for $CF_4$ decomposition, a streamer and a glow mode in DBD are experimentally compared, which includes (i) coaxialcylinder DBD, (ii) DBD reactor packed with glass beads. and (iii) a glow mode operation with a helium gas. The test results showed that optimal concentration of oxygen was ranged 500 ppm~1% for treating 500 ppm of $CF_4$ and helium glow discharge was the most efficient one to decompose $CF_4$.

• Journal of the Korean Society of Safety
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• v.32 no.6
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• pp.29-33
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• 2017

In order to solve this sort of electrostatic failure in Display and Semiconductor process, Soft X-ray ionizer is mainly used. Soft X-ray Ionizer does not only generate electrical noise and minute particle but also is efficient to remove electrostatic as it has a wide range of ionization. There exist variable factors such as type of tungsten thickness deposited on target, Anode voltage etc., and it takes a lot of time and financial resource to find optimal performance by manufacturing with actual X-ray tube source. Here, MCNPX (Monte Carlo N-Particle Extended) is used for simulation to solve this kind of problem, and optimum efficiency of X-ray generation is anticipated. In this study, X-ray generation efficiency was compared according to target material thickness using MCNPX and actual X-ray tube source under the conditions that tube voltage is 5 keV, 10 keV, 15 keV and the target Material is Tungsten(W). At the result, In Tube voltage 5 keV and distance 100 mm, optimal target thickness is $0.05{\mu}m$ and fastest decay time appears + decay time 0.28 sec. - deacy time 0.30 sec. In Tube voltage 10keV and distance 100 mm, optimal target Thickness is $0.16{\mu}m$ and fastest decay time appears + decay time 0.13 sec. - deacy time 0.12 sec. In the tube voltage 15 keV and distance 100 mm, optimal target Thickness is $0.28{\mu}m$ and fastest decay time appears + decay time 0.04 sec. - deacy time 0.05 sec.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.6
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• pp.55-65
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• 1998

In industrial fields, RTP(rapid thermal processing) system is widely used for improving the oxidation and the annealing in semiconductor manufacturing process. The main control factors are temperature control of wafer and uniformity in the wafer. In this paper, we propose an $H^{\infty}$ controller design of RTP system satisfying robust stability and performance using weighted mixed sensitivity miniimization and loop shaping technique. And we need reduction technique because of the difficulty of implementation with the obtained high order controller for original model and reduced models, namely, Hankel, square-root balanced, and Schur balanced methods. An example is proposed to show the validity of the proposed method.

• Korean Journal of Optics and Photonics
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• v.28 no.2
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• pp.75-82
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• 2017

We present a new type of receiver-transmitter optical system that can be adapted to the sensor head of a displacement-measuring interferometer. The interferometer is utilized to control positioning error and repetition accuracy of a wafer, down to the order of 1 nm, in a semiconductor manufacturing process. Currently, according to the tendency of scale-up of wafers, an interferometer is demanded to measure a wider range of displacement. To solve this technical problem, we suggest a new type of receiver-transmitter optical system consisting of a GRIN lens-Collimating lens-Afocal lens system, compared to conventional receiver-transmitter using a single collimating lens. By adapting this new technological optical structure, we can improve coupling efficiency up to about 100 times that of a single conventional collimating lens.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.49.1-49.1
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• 2010

The particle generation during the plasma enhanced process is highly considered as serious problem in the semiconductor manufacturing industry. The material for the plasma processing chamber requires the plasma etching characteristics which are homogeneously etched surface and low plasma etching depth for preventing particulate contamination and high durability. We found that the materials without grain boundaries can prevent the particle generation. Therefore, the amorphous material with the low plasma etching rate may be the best candidate for the plasma processing chamber instead of the polycrystalline materials such as yttria and alumina. Three glasses based on $SiO_2$ and $Al_2O_3$ were prepared with various rare-earth elements (Gd, Y and La) which are same content in the glass. The glasses were plasma etched in the same condition and their plasma etching rate was compared including reference materials such as Si-wafer, quartz, yttria and alumina. The mechanical and thermal properties of the glasses were highly related with cationic field strength (CFS) of the rare-earth elements. We assumed that the plasma etching resistance may highly contributed by the thermal properties of the fluorine byproducts generated during the plasma exposure and it is expected that the Gd containing glass may have the highest plasma etching resistance due to the highest sublimation temperature of $GdF_3$ among three rare-earth elements (Gd, Y and La). However, it is found that the plasma etching results is highly related with the mechanical property of the glasses which indicates the cationic field strength. From the result, we conclude that the glass structure should be analyzed and the plasma etching test should be conducted with different condition in the future to understand the plasma etching behavior of the glasses perfectly.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.8
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• pp.38-45
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• 2016

The objective of this research is to develop a method of improving MEP facility management based on 3D reverse engineering. Recently, 3D image scanning-based reverse engineering has been implemented in the fields of architecture, construction and (manufacturing). In the case where there are many objects and the MEP system is complicated, 3D reverse engineering is applied in semiconductor factories, because facility maintenance works cause the 2D drawing to be different from the original one. The 3D point cloud data obtained from 3D image scanning contains accurate data and can increase the efficiency of complicated MEP facility maintenance works. For this purpose, the present research studied the technology trends and analyzed the process of 3D reverse engineering. Based on the results, a method of improving MEP facility management is established and its effects described.