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http://dx.doi.org/10.17703/JCCT.2018.4.3.287

A Study on the Effect of Carbon Nanotube Directional Shrinking Transfer Method for the Performance of CNTFET-based Circuit  

Cho, Geunho (Dept. of Electronic Engineering, Seokyeong Univ)
Publication Information
The Journal of the Convergence on Culture Technology / v.4, no.3, 2018 , pp. 287-291 More about this Journal
Abstract
The CNTFET, which is attracting attention as a next-generation semiconductor device, can obtain ballistic or near-ballistic transport at a lower voltage than that of conventional MOSFETs by depositing CNTs between the source and drain of the device. In order to increase the performance of the CNTFET, a large number of CNTs must be deposited at a high density in the CNTFET. Thus, various manufacturing processes to increase the density of the CNTs have been developed. Recently, the Directional Shrinking Transfer Method was developed and showed that the current density of the CNTFET device could be increased up to 150 uA/um. So, this method enhances the possibility of implementing a CNTFET-based integrated circuit. In this paper, we will discuss how to evaluate the performance of the CNTFET device compared to a MOSFET at the circuit level when the CNTFET is fabricated by the Directional Shrinkage Transfer Method.
Keywords
Directional Shrinking Transfer Method; CNTFET; CNT; Process Variation; Linear Programming;
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Times Cited By KSCI : 2  (Citation Analysis)
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