• 한국전기전자재료학회논문지
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• 제30권11호
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• pp.745-750
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• 2017

Terahertz time-domain spectroscopy has been used to study the optical properties of $Pr^{3+}-doped$ selenide glasses. The complex refractive indexes of $Pr^{3+}-selenide$ glasses were measured in a frequency range from 0.3 to 1.5 THz. The real and imaginary refractive indexes increased with increasing frequency and $Pr^{3+}$ ion concentration. The obtained result indicated that the phonon modes of the $Pr^{3+}-doped$ selenide glasses shift to lower frequencies with the concentration of $Pr^{3+}$ ions. The theory of far-infrared absorption in amorphous materials was used to analyze the results. The measured data showed that the disorder-induced terahertz absorption increased with increasing $Pr^{3+}$ ion concentration.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.382-385
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• 2009

In this study, we studied switching characteristics of germanium selenide(Ge-Se)/silver(Ag) contact formed by photodoping for use in programmable metallization cell devices. We have been investigated the switching characteristics of Ag-doped chalcogenide thin films. Changed resistance range by direction of applied voltage is about $1\;M{\Omega}$ $\sim$ hundreds of $\Omega$. The cause of these resistance change can be thought the same phenomenon such as resistance variation of PMC-RAM. The results imply that the separated Ag-ions react the atoms or defects in chalcogenide thin films.

• Nuclear Engineering and Technology
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• 제44권8호
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• pp.945-952
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• 2012

The sorption of selenium ions onto iron and iron compounds as a disposal container material and its corrosion products, and onto bentonite as a buffer material, was studied to understand the behaviors of selenium in a waste repository. Selenite was sorbed onto commercial magnetite very well in solutions at around pH 9, but silicate hindered their sorption onto both magnetite and ferrite. Unlike commercial magnetite and ferrite, flesh synthesized magnetite, green rust and iron greatly decreased selenium concentration even in a silicate solution. These results might be due to the formation of precipitates, or the sorption of selenide or selenite onto an iron surface at below Eh= -0.2 V. Red-colored Se(cr) was observed on the surface of a reaction bottle containing iron powder added into a selenite solution. Silicate influences on the sorption onto magnetite and iron for selenide are the same as those for selenite. Even though bentonite adsorbed a slight amount of selenite, the sorption cannot be ignored in the waste repository since a very large quantity of bentonite is used.

• 한국광학회지
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• 제14권6호
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• pp.594-599
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• 2003

1.6 $\mu\textrm{m}$ 파장대의 U밴드 광증폭기용 광섬유 소재인 Pr첨가 Ge-Sb-Se 계열 셀레나이드 유리의 굴절률을 분광타원법을 이용하여 결정하였다. 시료의 광물성을 조사하기 위해 투과 파장 영역에서의 타원 스펙트럼을 Sellmeier 분산관계식에 기반한 공기/미시 거칠기층/표면층/기층으로 구성된 4상계의 모델에 적용하여 굴절률과 분산계수 및 박막구조상수를 동시에 얻을 수 있었다. 디스크 형태로 가공된 각 시료의 양면을 대상으로 위치에 따라 수회 반복 측정을 통하여 시료의 표면 거칠기의 영향을 파악함으로써 조성 변화에 대한 굴절률 변화 양상을 보다 정확히 파악하였다. 시료의 표면 거칠기가 굴절률 측정치의 편차에 주된 영향을 미쳤으나 1 몰%에 해당하는 소량의 조성변화에 따른 굴절률 변화를 신뢰할 수 있는 수준으로 결정할 수 있었다. 실험적으로 결정된 조성변화와 굴절률과의 관계식은 단일모드의 셀레나이드 광섬유 제작에 있어 코어와 클래드의 조성을 결정하는데 직접적으로 활용될 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.86-87
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• 2008

In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about 1 M$\Omega$ to several hundreds of $\Omega$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.304.2-304.2
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• 2014

Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

• 대한기계학회논문집A
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• 제21권1호
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• pp.133-143
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• 1997

Piezoelastic materials have recently attracted considerable attention because of their potential use in intelligent structural systems. In this paper, we treat a transient piezothermoelastic problem in a hexagonal plate of crystal class 6mm subjected to antisymmetric heating temperature. We analyze this problem by use of the potential function method. Numerical calculations are carried out for a cadmium selenide solid, and the results are presented graphically in comparison with those derived from the similar problem in a cadmium selenide plate subjected to symmetric heating temperature for a symmetry transient problem.

• 한국결정성장학회지
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• 제13권4호
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• pp.187-198
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• 2003

Zinc selenide (ZnSe) single crystals hold promise for many electro-optics, acousto-optic and green laser generation applications. This material is prepared in closed ampoules by the physical vapor transport (PVT) growth method based on the dissociative sublimation. We investigate the effects of diffusive-convection on the crystal growth rate of ZnSe with a low vapor pressure system in a horizontal configuration. Our results show that for the ratios of partial pressures, s=0.2 and 2.9, the growth rate increases with the Peclet number and the temperature differences between the source and crystal. As the ratio of partial pressures approaches the stoichiometric value of 2, the rate increases. The mass fluk based on one dimensional (1D model) flow for low vapor pressure system fall within the range of the predictions (2D model) obtained by solving the coupled set of conservation equations, which indicates the flow fields would be advective-diffusive. Therefore, the rate and the flow fields are independent of gravity acceleration levels.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.319-320
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• 2007

We researched basic study about electrical characteristics of Zinc Selenide (Faraday Cell), which is known for various temperature of good-performance, that applied measuring current or protecting instrument by Optical Current Transducer, on Gas Insulated Switchgear. Measuring System consists of VCSEL produced 850nm IR Laser, Pin Photo Diode made of GaAs surveyed as Optical Power Meter, and Optical Fibers specified Multi-mode. We observed optical output changes during measurement of currents increasing by 100[A] in range from 0[A] to 1,000[A] and set temperature condition increasing by $5[^{\circ}C]$ in a range from $30[^{\circ}C]\;to\;60[^{\circ}C]$.

• 한국재료학회지
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• 제23권3호
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• pp.183-189
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• 2013

$Cu_2ZnSn(S,Se)_4$ material is receiving an increased amount of attention for solar cell applications as an absorber layer because it consists of inexpensive and abundant materials (Zn and Sn) instead of the expensive and rare materials (In and Ga) in $Cu(In,Ga)Se_2$ solar cells. We were able to achieve a cell conversion efficiency to 4.7% by the selenization of a stacked metal precursor with the Cu/(Zn + Sn)/Mo/glass structure. However, the selenization of the metal precursor results in large voids at the absorber/Mo interface because metals diffuse out through the top CZTSe layer. To avoid the voids at the absorber/Mo interface, binary selenide compounds of ZnSe and $SnSe_2$ were employed as a precursor instead of Zn and Sn metals. It was found that the precursor with Cu/$SnSe_2$/ZnSe stack provided a uniform film with larger grains compared to that with $Cu_2Se/SnSe_2$/ZnSe stack. Also, voids were not observed at the $Cu_2ZnSnSe_4$/Mo interface. A severe loss of Sn was observed after a high-temperature annealing process, suggesting that selenization in this case should be performed in a closed system with a uniform temperature in a $SnSe_2$ environment. However, in the experiments, Cu top-layer stack had more of an effect on reducing Sn loss compared to $Cu_2Se$ top-layer stack.