Determination of optical properties of Pr3+-doped selenide glasses of Ge-Sb-Se system using spectroscopic ellipsometry
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신상균
(아주대학교 분자과학기술학과)
김상준 (아주대학교 분자과학기술학과) 김상열 (아주대학교 분자과학기술학과) 최용규 (한국전자통신연구원 반도체ㆍ원천기술연구소) 박봉제 (한국전자통신연구원 반도체ㆍ원천기술연구소) 서홍석 (한국전자통신연구원 반도체ㆍ원천기술연구소) |
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Nondestructive Depth Profiling of ZnS and MgO Films by Spectroscopic Ellipsometry
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Y. G. Choi, B. J. Park, K. H. Kim and J. Heo, " |
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Characterization of a MOCVD grown GaAs/AlGaAs superlattice structure using Spectroscopic Ellipsometry
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과학기술학회마을 DOI |
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1.6㎛ emission from Ho<TEX>$^{3+}$</TEX>-doped fluoride glasses
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Complex Refractive Indices of Ge-Sb-Te Alloy Films: Variation with Nitrogen Addition and Wavelength Dependence
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Optical Characterization of silicon dioxide layers grown on silicon under different growth conditions
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Pr<TEX>$^{3+}$</TEX> - and Pr<TEX>$^{3+}$</TEX>/Er<TEX>$^{3+}$</TEX>-doped selenide glasses for potential 1.6㎛ optical amplifier materials
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1.6 ㎛ emission from Pr<TEX>$^{3+}$</TEX>(³F₃, ³F₄) → ³H₄ transition in Pr<TEX>$^{3+}$</TEX> - and Pr<TEX>$^{3+}$</TEX>/Er<TEX>$^{3+}$</TEX> -doped selenide glasses
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Laser-diode-pumped highly efficient gain-shifted thulium-doped fiber amplifier operating in the 1480~1510 nm band
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Spectro-ellipsometry Investigation of Cascaded Crystallization Behavior of Phase Change Ge-Sb-Te Alloy
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Pr<TEX>$^{3+}$</TEX>-doped selenide fiber for 1610~1650 nm optical amplifiers
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Formation and nondestructive characterization of ion implanted Silicon-on-Insulator layers
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Rare-earth-doped glasses for fiber amplifiers in broadband telecommunication
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