• 한국재료학회지
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• 제15권7호
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• pp.480-485
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• 2005

Sc has been known to be an very effective ppt-hardening element in Al and Al alloys and also to be effective in modification of eutectic Si in hypoeutectic Al-Si alloys. The modification mechanism of Sc is different from that of the traditional modifier Sr in Al-Si alloys. In the present study the effects of Sc on the primary and eutectic Si in hypereutectic Al-Si alloys were investigated with evaluating the microstructures with OM, EPMA and EBSD methods. The results represent that Sc has only a small effect on primary Si when added less than $0.8wt\%$. However, when Sc addition leading to the precipitation of metallic Sc within primary Si reaches $1.6wt\%$, very coarse primary Si occurs.

• 한국주조공학회지
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• 제24권3호
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• pp.145-152
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• 2004

The eutectic Si in Al-8.5wt.%Si alloy was changed from large flake to fine lemellar(or fibrous) shape when the Sc amount in the Al-Si alloy reaches 0.2wt.%. The optimum amount of Sc for the best modification effect was 0.8wt.% and slight decrease of modification effect occurred over this value. The study on the distribution of the modifiers(Sr, Na, and Sc) and the measurement of the surface tension of the Al-8.5wt.%Si alloy melt added with Sr, Na, and Sc modifier, respectively, reveals that Sc modifies the eutectic Si by the decrease of surface tension, while Sr and Na modify the eutectic Si mainly by impurity induced twinning mechanism.

• 열처리공학회지
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• 제35권3호
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• pp.150-158
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• 2022

The effects of scandium addition on the Al-6Si-2Cu Alloy were investigated. The Al-6Si-2Cu-Sc alloy was prepared by gravity die casting process. In this study, scandium was added at 0.2 wt%, 0.4 wt%, 0.8 wt%, and 1.0 wt%. The microstructure of Al-6Si-2Cu-Sc alloy was investigated using Optical Microscope, Field Emission Scanning Electron Microscope, Electron Back Scatter Diffraction, and Transmission Electron microscope. The microstructure of Al-6Si-2Cu alloy with scandium added changed from dendrite structure to equiaxed crystal structure in specimens of 0.4 wt% Sc or more, and coarse needle-shape eutectic Si and β-Al₅FeSi phases were segmented and refined. The nanosized Al₃Sc intermetallic compound was observed to be uniformly distributed in the modified Al matrix.

• 한국결정성장학회지
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• 제32권2호
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• pp.55-60
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• 2022

본 연구에서는 SiC 단결정의 TSSG 공정중 결정 품질을 저하시키지 않으면서도 의도하지 않은 질소 도핑(N-UID)을 쉽게 제어하기 위해 지금까지 Co 또는 Sc 전이금속을 첨가한 신규 용융조성을 제안한다. Co 또는 Sc의 특성을 파악하기 위해 Ar 분위기에서 1900℃ 온도에서 약 2시간 동안 열처리 실험을 수행했다. 용융조성은 Si-Ti 10 at% 또는 Si-Cr 30 at%를 비롯하여, 탄소 용해도에 효과적이라고 알려진 Co 또는 Sc을 각각 3 at% 첨가하였다. 열처리 후 도가니 단면을 가공하여 도가니-용융물 계면에서 발생한 Si-C 반응층을 관찰하고, 탄소황분석을 통해 조성에 따른 탄소 용해도를 간접적으로 분석하였다. 그 결과, Si-Sc 기반 용융조성이 TSSG 공정에 적합한 특성을 갖는 Si-C반응층을 형성하고 있었다. 또한 탄소황분석 결과에서도 Cr 다음으로 높은 탄소량이 갖는 것으로 분석되었다. Sc는 Cr에 비해 질소와의 반응성이 낮은 이점을 가지므로 TSSG 공정에 Si-Sc 용융조성을 적용하면, 본 연구에서 의도한 대로 SiC 단결정 성장속도와 질소 UID를 모두 제어할 수 있는 것으로 고려된다.

• 전기전자학회논문지
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• 제23권3호
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• pp.756-761
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• 2019

본 논문에서는 기존 4H-SiC SJ UMOSFET 구조의 p-pillar을 기존 UMOSFET의 shielding 영역 아래로 배치시키는 SC-SJ(Shielding Connected-Super Junction) UMOSFET 구조를 제안한다. 제안한 SC-SJ UMOSFET의 경우 p-pillar와 shielding 영역이 공존하여 산화막에서 전계에 의한 항복이 발생하지 않도록 하며, 이는 pillar의 도핑 농도 상승을 가능하게 한다. 결과적으로 온저항을 낮춤으로서 소자의 정적 특성을 개선한다. Sentaurus TCAD 시뮬레이션을 통해 기존 구조와 제안한 구조의 정적 특성을 비교, 분석하였다. 제안한 SC-SJ UMOSFET은 기존 구조에 비해 항복전압의 변화 없이 50% 감소된 온저항을 얻을 수 있다.

• 한국재료학회지
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• 제31권2호
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• pp.97-100
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• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2009년도 추계학술대회 논문집
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• pp.455-458
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• 2009

In this research, the effect of Sc on the micro structure and mechanical properties of Al-20Si alloy powders and their extruded bar was investigated. The Al-20wt%Si and Al-20wt%Si-0.6wr%Sc powders were produced by gas atomization. The micro structures of the alloy powders and extrude was examined by optical microscopy (OM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The alloy powders were subsequently canned, degassed and extruded in order to produce the alloy bulk. It was found that the micro structure of the Al-20Si alloy powder was refined and the mechanical properties was significantly improved by the addition of 0.6Sc.

• 한국주조공학회지
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• 제35권6호
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• pp.147-154
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• 2015

The effects of Sc and Sr elements on the modification of the eutectic $Mg_2Si$ phase and the castability were investigated in the Al-4wt%Mg-0.9wt%Si-0.3wt%Mn-0.15wt%Fe alloy. Measurements of the cooling curve and microstructure observations were performed to analyze the additional effects of Sc and Sr minor elements during the solidification process. A prominent effect found on the modification of the eutectic $Mg_2Si$ phase with additions of the Sr and Sc elements. Here, a fine eutectic $Mg_2Si$ phase and a decrease in the growth temperature of the eutectic $Mg_2Si$ phase were evident with an addition of Sc element up to 0.2 wt%. The growth temperature of the eutectic $Mg_2Si$ phase decreased and the effect on the modification of the eutectic $Mg_2Si$ phase increased with the addition of Sr element up to 0.02 wt%. The addition of 0.02wt%Sr had the strongest effect on the modification of the eutectic $Mg_2Si$ phase, and the resulting microstructure of the eutectic $Mg_2Si$ phase was found to have a fibrous morphology with a decreased aspect ratio and an increased modification ratio. Fluidity and shrinkage tests were conducted to evaluate the castability of the alloy. The addition of 0.02wt%Sr effectively increased the fluidity of the alloy, while an addition of Sc did not show any effect compared to when nothing was added. The maximum filling length was recorded for 0.01wt%TiB-0.02wt%Sr owing to the effect of the fine ${\alpha}$-Al grains. The macro-shrinkage ratio decreased, while the micro-shrinkage ratio increased with the addition of various eutectic modifiers. The highest ratio of micro-shrinkage was recorded for the 0.02wt%Sr condition. However, the total shrinkage ratio was nearly identical regardless of the amounts added in this study.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.43-43
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• 2002

• 한국전기전자재료학회논문지
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• 제15권3호
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• pp.233-237
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• 2002

A giga-bit DRAM(dynamic random access memory) technology with W/WNx/poly-Si dual gate electrode is presented in 7his papers. We fabricated $0.16\mu\textrm{m}$ CMOS using this technology and succeeded in suppressing short-channel effects. The saturation current of nMOS and surface-channel pMOS(SC-pMOS) with a $0.16\mu\textrm{m}$ gate was observed 330 $\mu\A/\mu\textrm{m}$ and 100 $\mu\A/\mu\textrm{m}$ respectively. The lower salutation current of SC-pMOS is due to the p-doped poly gate depletion. SC-pMOS shows good DIBL(dram-induced harrier lowering) and sub-threshold characteristics, and there was no boron penetration.