• Title/Summary/Keyword: saturation velocity

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Electrical Characteristics of GaAs MESFET's Considering Channel Charge (GaAs MESFET의 채널전하에 의한 전기적 특성해석)

  • Won, Chang-Sub;Hong, Jea-Il
    • Proceedings of the KIEE Conference
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    • 2005.10a
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    • pp.165-168
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    • 2005
  • In this paper, we examined channel charge which occurs in electron accumulation after electron velocity saturation. Generally, short gate GaAs MESFET show, saturated electron velocity leading to current satulation. When electron velocity is saturated, deletion layer is still open channel and it plays a key role in deciding saturation current mode we proposed channel charge model in channel after electron velocity saturation.

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Accurate RF Extraction Method for Gate Voltage-Dependent Carrier Velocity of Sub-0.1㎛ MOSFETs in the Saturation Region (Sub-0.1㎛ MOSFET의 게이트전압 종속 캐리어 속도를 위한 정확한 RF 추출 방법)

  • Lee, Seonghearn
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.9
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    • pp.55-59
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    • 2013
  • A new method using RF Ids determined from measured S-parameters is proposed to extract the gate-voltage dependent effective carrier velocity of bulk MOSFETs in the saturation region without additional dc Ids measurement data suffering parasitic resistance effect that becomes larger with continuous down-scaling to sub-$0.1{\mu}m$. This method also allows us to extract the carrier velocity in the saturation region without the difficult extraction of bias-dependent parasitic gate-source capacitance and effective channel length. Using the RF technique, the electron velocity overshoot exceeding the bulk saturation velocity is observed in bulk N-MOSFETs with a polysilicon gate length of $0.065{\mu}m$.

Lateral Electric Field Model and Degradation Mechanism of surface-Channel PMOSFET's (SC PMOSFET의 수평 전개 모델과 노쇠화 메카니즘)

  • 양광선;박종태;김봉렬
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.1
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    • pp.54-60
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    • 1994
  • In this paper, we present the analytical models for the change of the lateral electric field distribution and the velocity saturation region length with the electron trapping of stressed SC-PMOSFET in the saturation region. To derive the hot-electron-induced lateral electric field of stressed SC-PMOSFET. Ko's pseudo two dimensional box model in the saturation region which illustrates the analysis of the velocity saturation region is modified under the condition of electron trapping in the oxide near the drain region. From the results, we have the following lateral electric field in the y-direction, that is, E(y) ES1satT.cosh(y/l) qNS1tT.sinh(y/l)/lCox. It is shown that the trapped electrons influence the field in the drain region. decreasing the lateral electric field. Calculated velocity saturaion length increases with the trapped electrons. increasing the drain current of stressed SCPMOSFET. This results well explain the HEIP phenomenon of PMOSFET's.

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Reduction of Transconduce in Saturation Region of Short Channel LDD(Lightly Doped Drain) NMOSFETs (짤은 채널 LDD(Lightly doped Drain)NMOSFET의 포화영역 Transconductance 감소)

  • 이명복;이정일;강광남
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.1
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    • pp.74-80
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    • 1990
  • The transconductance of short channel LDD MOSFETs in the saturation region (high Vd)has shown different characteristics from that of conventional device. The transconductance in saturation regime of short channel LDD MOSFETs is reduced from maximum value at higher gate voltage. This decline is analyzed as the velocity saturation effects of carrier at LDD region but accurate analytical expressions for the drain current Idsat and the transconductance Gmsat in the saturation regime are still not in existence. Recently the drain current dependence of parasitic source resistance Rs has been modeled from the velocity saturation of carriers in LDD region. In this study, we approximate that Rmsat that Rs is linearly dependent on the applied gate voltage. Analytical expressions for Idsat and Gmsat obtained from this approximation show the same general behavior as experimental results of short channel LDD NMOSFETs.

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Electrical Characteristics of GaAs MESFET's Considering Channel Charge (GaAs MESFET의 채널전하에 의한 전기적 특성해석)

  • Won, Chang-Sub;Yu, Young-Han;Lee, Yong-Kuk;Ahn, Hyung-Keun;Han, Deuk-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.52-55
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    • 2004
  • In this paper, we examined channel charge which occurs in electron accumulation after electron velocity saturation. Generally, short gate GaAs MESFET show, saturated electron velocity leading to current salutation. When electron velocity is saturated, deletion layer is stil open channel and it play a key role in deciding saturation current mode we proposed channel charge model in channel after electron velocity saturation.

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The Variation of Compressional Wave Velocity with Degree of Saturation in Granites

  • Lee, Su-Gon
    • Journal of the Korean Geotechnical Society
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    • v.15 no.3
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    • pp.177-197
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    • 1999
  • The measurement of sonic velocities is commonly used as an index of engineering properties of rock, but it is not widely appreciated that this velocity can change markedly with the degree of saturation of the sample. This paper records the nature of this variation as seen in samples of Korean granite. The ISRM method of testing suggested for this index can also create difficulties, especially if vaseline is used as a coupling agent, and invades the samples, and if the sample volume changes with degree of saturation. Careful measurements of the natural variation in sonic velocity that occur in a sample whose saturation is gradually increased may be a means of assessing the relic stresses within it.

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Optimum Angle between Pump Beam and Probe Beam in the Differential-Velocity-Selective Saturation Absorption Spectroscopy (차동속도선택 포화흡수분광법에서 펌프광과 조사광의 최적 각도)

  • Cho, Chang-Ho;Park, Jong-Dae
    • The Journal of Natural Sciences
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    • v.12 no.1
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    • pp.49-59
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    • 2002
  • Exponential decrease of saturation absorption signal was reported in pump beam spacially keeping off from probe beam. Optimum angle between pump beam and probe beam in the differential-velocity-selective saturation absorption spectroscopy was computed theoretically, $1.33^{\circ}$ in cesium atoms and $1.08^{\circ}$ in Rb 87 atoms, and was good agreement with the experimental results.

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Monitoring and detecting $CO_2$ injected into water-saturated sandstone with joint seismic and resistivity measurements (탄성파 및 비저항 동시측정에 의한 수포화 암석시료에 주입된 $CO_2$ 모니터링 및 탐지)

  • Kim, Jong-Wook;Matsuoka, Toshifumi;Xue, Ziqiu
    • Geophysics and Geophysical Exploration
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    • v.14 no.1
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    • pp.58-68
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    • 2011
  • As part of basic studies of monitoring carbon dioxide ($CO_2$) storage using electrical and seismic surveys, laboratory experiments have been conducted to measure resistivity and P-wave velocity changes due to the injection of $CO_2$ into water-saturated sandstone. The rock sample used is a cylinder of Berea sandstone. $CO_2$ was injected under supercritical conditions (10 MPa, $40^{\circ}C$). The experimental results show that resistivity increases monotonously throughout the injection period, while P-wave velocity and amplitude decrease drastically due to the supercritical $CO_2$ injection. A reconstructed P-wave velocity tomogram clearly images $CO_2$ migration in the sandstone sample. Both resistivity and seismic velocity are useful for monitoring $CO_2$ behaviour. P-wave velocity, however, is less sensitive than resistivity when the $CO_2$ saturation is greater than ~20%. The result indicates that the saturation estimation from resistivity can effectively complement the difficulty of $CO_2$ saturation estimations from seismic velocity variations. By combining resistivity and seismic velocity we were able to estimate $CO_2$ saturation distribution and the injected $CO_2$ behaviour in our sample.

Development of Torsional Shear Testing System to Measure P-wave Velocity, S-wave Velocity and Pore Water Pressure Buildup on Fully and Partially Saturated Sands (포화 및 부분 포화 사질토의 Vp와 Vs 속도 및 과잉간극수압 측정을 위한 비틂전단 시험기의 개발)

  • Kim, Dong-Soo;Lee, Sei-Hyun;Choo, Yun-Wook
    • Journal of the Korean GEO-environmental Society
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    • v.7 no.1
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    • pp.55-66
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    • 2006
  • Laboratory tests have revealed that the liquefaction resistance of sands depends strongly upon the degree of saturation, which is expressed in terms of the pore pressure coefficient, B. The velocity of compression waves(i.e. P-waves), which have been known to be influenced largely by the degree of saturation and can be measured conveniently in the field, appears as an indicator of saturation. In this paper, the Stokoe type torsional shear(TS) testing equipment is modified to saturate the specimen and measure the velocities of P-wave and S-wave and pore pressure buildup. The velocities of P-wave and S-wave for Toyoura sand from Japan is measured and compared at the various B-value (degree of saturation) which are partially saturated to fully saturated conditions. Additionally, the variation of the pore water pressure induced during undrained TS tests at the various B-value is measured and analyzed.

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Estimation of Saturation Velocity in Soils During Rainfall using Soil Box Test (모형토조실험을 이용한 강우시 토층의 포화속도 산정)

  • Kim, Chul-Min;Song, Young-Suk;Kim, Hak-Joon
    • The Journal of Engineering Geology
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    • v.25 no.3
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    • pp.377-385
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    • 2015
  • We constructed a model test apparatus to evaluate the dependence of the saturation velocity (Vs) in soils on rainfall intensity (IR). The apparatus comprises a soil box, a rainfall simulator, and measuring sensors. The model grounds (60 cm × 50 cm × 15 cm) were formed by Joomunjin standard sand with a relative density of 75%. The rainfall simulator can control the rainfall intensity to reenact the actual rainfall in a soil box. Time Domain Reflectometer (TDR) sensors and tensiometers were installed in the soils to measure changes in the volumetric water content and matric suction due to rainfall infiltration. During the tests, the soil saturation was determined by raising the groundwater table, which was formed at the bottom of the soil box. [Please check that the correct meaning has been maintained.] The wetting front did not form at the ground surface during rainfall because the soil particles were uniform and the coefficient of permeability was relatively high. Our results show that the suction stress of the soils decreased with increasing volumetric water content, and this effect was most pronounced for volumetric water contents of 20%-30%. Based on a regression analysis of the relationship between rainfall intensity and the average saturation velocity, we suggest the following equation for estimating the saturation velocity in soils: Vsavg (cm/sec) = 0.068IR (mm/hr).