• 한국전기전자재료학회논문지
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• 제15권10호
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• pp.838-843
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• 2002

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The reverse moat etch process has been used for the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process with conventional low selectivity slurries. Thus, the process became more complex, and the defects were seriously increased. In this paper, we studied the direct STI-CMP process without reverse moat etch step using high selectivity slurry(HSS). As our experimental results show, it was possible to achieve a global planarization without the complicated reverse moat process, the STI-CMP process could be dramatically simplified, and the defect level was reduced. Therefore the throughput, yield, and stability in the ULSI semiconductor device fabrication could be greatly improved.

• KIEE International Transactions on Electrophysics and Applications
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• 제3C권1호
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• pp.28-32
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• 2003

In this paper, we have studied the in-situ end point detection (EPD) for direct chemical mechanical polishing (CMP) of shallow trench isolation (STI) structures without the reverse moat etch process. In this case, we applied a high selectivity $1n (HSS) that improves the silicon oxide removal rate and maximizes oxide to nitride selectivity Quite reproducible EPD results were obtained, and the wafer-to-wafer thickness variation was significantly reduced compared with the conventional predetermined polishing time method without EPD. Therefore, it is possible to achieve a global planarization without the complicated reverse moat etch process. As a result, the STI-CMP process can be simplified and improved using the new EPD method.

• 멤브레인
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• 제33권6호
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• pp.409-415
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• 2023

고성능 분리막 제조기술과 더불어 새로운 분리막 다단공정 설계를 통해 용매사용량 감소 및 선택도 향상이 가능하다. 본 연구에서는 내용매성 셀룰로스 나노분리막을 제조하여 용매에 따른 용질의 선택도 차이를 비교하였다. 제막한 셀룰로스 막을 기반으로 비극성 용매의 선택도 평가를 진행하였으며, 비극성 용매에서 용질에 대한 음배제율이 관측되었다. 특히, 분자량이 클수록 음배제율이 높아지는 역선택도의 거동을 확인하였다. 이를 기반으로 설계한 공정에서는 기존 분획 공정 대비 3배 이상의 용매저감이 가능한 것을 확인할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.35-38
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• 2000

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.l8um semiconductor device. Through reverse moat pattern process, reduced moat density at high moat density, STI CMP process with low selectivity could be to fit polish uniformity between low moat density and high moat density. Because this reason, in-situ motor current end point detection method is not fit to the current EPD technology with the reverse moat pattern. But we use HSS without reverse moat pattern on STI CMP and take end point current sensing signal.[1] To analyze sensing signal and test extracted signal, we can to adjust wafer difference within $110{\AA}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.33-36
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The rise throughput and the stability in the device fabrication can be obtained by applying of CMP process to STI structure in 0.18$\mu\textrm{m}$ m semiconductor device. The reverse moat process has been added to employ in of each thin films in STI-CMP was not equal, hence the devices must to be effected, that is, the damage was occurred in the device area for the case of excessive CMP process and the nitride film was remained on the device area for the case of insufficient CMP process, and than, these defects affect the device characteristics. Also, we studied the High Selectivity Slurry(HSS) to perform global planarization without reverse moat step.

• 한국전기전자재료학회논문지
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• 제14권3호
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• pp.175-184
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• 2001

In this study, the improved throughput and stability in device fabrication could be obtained by applying CMP process to STi structue in 0.18 um semiconductor device. To employ the CMP process in STI structure, the Reverse Moat Process used to be added after STI Fill, as a result, the process became more complex and the defect were seriously increased than they had been,. Removal rate of each thin film in STI CMP was not uniform, so, the device must have been affected. That is, in case of excessive CMP, the damage on the active area was occurred, and in the case of insufficient CMP nitride remaining was happened on that area. Both of them deteriorated device characteristics. As a solution to these problems, the development of slurry having high removal rate and high oxide to nitride selectivity has been studied. The process using this slurry afford low defect levels, improved yield, and a simplified process flow. In this study, we evaluated the 'High Selectivity Slurry' to do a global planarization without reverse moat step, and also we evaluated EPD(Eend Point Detection) system with which 'in-situ end point detection' is possible.

• 멤브레인
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• 제34권1호
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• pp.58-69
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• 2024

역전기투석(reverse electrodialysis, RED)은 해수와 담수의 농도 차로부터 에너지를 얻는 이온교환막을 이용한 전기막 공정이다. 해수와 담수에 포함된 다가 이온은 이온교환막의 고정 전하 그룹에 강하게 결합하여 높은 저항을 유발하며 uphill transport를 통해 개방회로 전압과 전력 밀도를 저하시킬 수 있다. 본 연구에서는 RED 응용을 위해 1가 이온 선택성 및 전기화학적 특성이 우수한 세공충진 음이온교환막(pore-filled anion-exchange membrane, PFAEM)을 제조하였다. 제조된 막의 1가 이온 선택성은 3.65였으며 동일 조건에서 1.27의 선택성을 갖는 상용막(ASE, Astom Corp.)보다 우수한 수준을 나타내었다. 또한 제조된 막은 ASE 대비 낮은 전기적 저항 등 우수한 전기화학적 특성을 나타내었다. 0.459 M NaCl/0.0510 M Na₂SO₄의 해수와 0.0153 M NaCl/0.0017 M Na₂SO₄의 담수 조건에서 RED 성능을 평가한 결과 제조된 막을 적용하여 1.80 W/m²의 최대 전력 밀도를 얻었으며 이는 ASE 막 대비 40.6% 향상된 출력 성능이었다.

• 한국환경농학회지
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• 제13권2호
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• pp.209-215
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• 1994

Absorption, translocation, and metabolism of the herbicide alachlor in soybean, Chinese cabbage, and barnyard grass seedlings were examined and compared with each other using [phenyl-U-$^{14}C$] alachlor in search of a primary factor contributing to the selectivity of alachlor. When root of each seedling was immersed into the solution containing [$^{14}C$]alachlor, the amount of absorbed radioactivity/mg dry matter of seedling which was suggested to be correlated with the susceptibility of plants to alachlor decreased in the order of soybean ${\gg}$ Chinese cabbage ${\geq}$ barnyard grass and the rate of translocation to shoot was Chinese cabbage ${\geq}$ barnyard grass ${\gg}$ soybean. These orders did not consistently explain the selective phytotoxicity of alachlor. Analyses of extracts by reverse phase chromatography showed that alachlor was detoxified by conjugation with glutathione in all three plants and the rate of glutathione conjugation of soybean, the resistant species to alachlor, was the greatest, while that of barnyard grass, the susceptible, was the lowest among three plants. This result explained well the selective phytotoxicity of alachlor. Both absorption and translocation contribute undoubtedly to the selectivity by influencing the active internal concentration of alachlor. However, neither of them appeared to be a primary factor. It was concluded that the most important primary factor was the rate of glutathione conjugation, which detoxifies alachlor and plays an important role in selectivity.

• KIEE International Transactions on Electrophysics and Applications
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• 제2C권5호
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• pp.262-267
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• 2002

In this paper, we first studied the factors affecting the motor current (MC) signal, which was strongly affected by the systematic hardware noises depending on polishing such as pad conditioning and arm oscillation of platen and recipe, head motor. Next, we studied the end point detection (EPD) for the chemical mechanical polishing (CMP) process of shallow trench isolation (STI) with reverse moat structure. The MC signal showed a high amplitude peak in the fore part caused by the reverse meal. pattern. We also found that the EP could not be detected properly and reproducibly due to the pad conditioning effect, especially when conventional low selectivity slurry was used. Even when there was no pad conditioning effect, the EPD method could not be applied, since the measured end points were always the same due to the characteristics of the reverse moat structure with an open nitride layer.

• Transactions on Electrical and Electronic Materials
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• 제3권4호
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• pp.5-9
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• 2002

Chemical mechanical polishing (CMP) has become the preferred planarization method for multilevel interconnect technology due to its ability to achieve a high degree of feature level planarity. Especially, to achieve the higher density and greater performance, shallow trench isolation (STI)-CMP process has been attracted attention for multilevel interconnection as an essential isolation technology. Also, it was possible to apply the direct STI-CMP process without reverse moat etch step using high selectivity slurry (HSS). In this work, we determined the process margin with optimized process conditions to apply HSS STI-CMP process. Then, we evaluated the reliability and reproducibility of STI-CMP process through the optimal process conditions. The wafer-to-wafer thickness variation and day-by-day reproducibility of STI-CMP process after repeatable tests were investigated. Our experimental results show, quite acceptable and reproducible CMP results with a wafer-to-wafer thickness variation within 400$\AA$.