• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.838-843
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• 2002

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The reverse moat etch process has been used for the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process with conventional low selectivity slurries. Thus, the process became more complex, and the defects were seriously increased. In this paper, we studied the direct STI-CMP process without reverse moat etch step using high selectivity slurry(HSS). As our experimental results show, it was possible to achieve a global planarization without the complicated reverse moat process, the STI-CMP process could be dramatically simplified, and the defect level was reduced. Therefore the throughput, yield, and stability in the ULSI semiconductor device fabrication could be greatly improved.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.1
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• pp.28-32
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• 2003

In this paper, we have studied the in-situ end point detection (EPD) for direct chemical mechanical polishing (CMP) of shallow trench isolation (STI) structures without the reverse moat etch process. In this case, we applied a high selectivity $1n (HSS) that improves the silicon oxide removal rate and maximizes oxide to nitride selectivity Quite reproducible EPD results were obtained, and the wafer-to-wafer thickness variation was significantly reduced compared with the conventional predetermined polishing time method without EPD. Therefore, it is possible to achieve a global planarization without the complicated reverse moat etch process. As a result, the STI-CMP process can be simplified and improved using the new EPD method.

• Membrane Journal
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• v.33 no.6
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• pp.409-415
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• 2023

Apart from developing better membranes, a clever reconfiguration of membrane cascade process can improve the solute selectivity and minimize solvent consumption. In this work, solvent resistant cellulose nanofiltration membranes were fabricated and the solute rejection performance in various organic solvents were tested. Interestingly, cellulose membranes exhibited unique negative rejection profile in non-polar solvents. Such trend could be exploited to yield reverse selectivity, which showed that low molecular weight solute could be concentrated in the retentate. It was found that more than 3-fold solvent saving could be achieved at the same final purity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.35-38
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• 2000

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.l8um semiconductor device. Through reverse moat pattern process, reduced moat density at high moat density, STI CMP process with low selectivity could be to fit polish uniformity between low moat density and high moat density. Because this reason, in-situ motor current end point detection method is not fit to the current EPD technology with the reverse moat pattern. But we use HSS without reverse moat pattern on STI CMP and take end point current sensing signal.[1] To analyze sensing signal and test extracted signal, we can to adjust wafer difference within $110{\AA}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.33-36
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The rise throughput and the stability in the device fabrication can be obtained by applying of CMP process to STI structure in 0.18$\mu\textrm{m}$ m semiconductor device. The reverse moat process has been added to employ in of each thin films in STI-CMP was not equal, hence the devices must to be effected, that is, the damage was occurred in the device area for the case of excessive CMP process and the nitride film was remained on the device area for the case of insufficient CMP process, and than, these defects affect the device characteristics. Also, we studied the High Selectivity Slurry(HSS) to perform global planarization without reverse moat step.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.175-184
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• 2001

In this study, the improved throughput and stability in device fabrication could be obtained by applying CMP process to STi structue in 0.18 um semiconductor device. To employ the CMP process in STI structure, the Reverse Moat Process used to be added after STI Fill, as a result, the process became more complex and the defect were seriously increased than they had been,. Removal rate of each thin film in STI CMP was not uniform, so, the device must have been affected. That is, in case of excessive CMP, the damage on the active area was occurred, and in the case of insufficient CMP nitride remaining was happened on that area. Both of them deteriorated device characteristics. As a solution to these problems, the development of slurry having high removal rate and high oxide to nitride selectivity has been studied. The process using this slurry afford low defect levels, improved yield, and a simplified process flow. In this study, we evaluated the 'High Selectivity Slurry' to do a global planarization without reverse moat step, and also we evaluated EPD(Eend Point Detection) system with which 'in-situ end point detection' is possible.

• Membrane Journal
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• v.34 no.1
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• pp.58-69
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• 2024

Reverse electrodialysis (RED) is an electro-membrane process employing ion-exchange membranes (IEMs) that can harvest electric energy from the concentration difference between seawater and river water. Multivalent ions contained in seawater and river water bind strongly to the fixed charge groups of the IEM, causing high resistance and reducing open-circuit voltage and power density through uphill transport. In this study, a pore-filled anion-exchange membrane (PFAEM) with excellent monovalent ion selectivity and electrochemical properties was fabricated and characterized for RED application. The monovalent ion selectivity of the prepared membrane was 3.65, which was superior to a commercial membrane (ASE, Astom Corp.) with a selectivity of 1.27 under the same conditions. Additionally, the prepared membrane showed excellent electrochemical properties, including low electrical resistance compared to ASE. As a result of evaluating RED performance under seawater of 0.459 M NaCl/0.0510 M Na₂SO₄ and river water of 0.0153 M NaCl/0.0017 M Na₂SO₄, the maximum power density of 1.80 W/m² was obtained by applying the prepared membrane, which is a 40.6% improved output performance compared to the ASE membrane.

• Korean Journal of Environmental Agriculture
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• v.13 no.2
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• pp.209-215
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• 1994

Absorption, translocation, and metabolism of the herbicide alachlor in soybean, Chinese cabbage, and barnyard grass seedlings were examined and compared with each other using [phenyl-U-$^{14}C$] alachlor in search of a primary factor contributing to the selectivity of alachlor. When root of each seedling was immersed into the solution containing [$^{14}C$]alachlor, the amount of absorbed radioactivity/mg dry matter of seedling which was suggested to be correlated with the susceptibility of plants to alachlor decreased in the order of soybean ${\gg}$ Chinese cabbage ${\geq}$ barnyard grass and the rate of translocation to shoot was Chinese cabbage ${\geq}$ barnyard grass ${\gg}$ soybean. These orders did not consistently explain the selective phytotoxicity of alachlor. Analyses of extracts by reverse phase chromatography showed that alachlor was detoxified by conjugation with glutathione in all three plants and the rate of glutathione conjugation of soybean, the resistant species to alachlor, was the greatest, while that of barnyard grass, the susceptible, was the lowest among three plants. This result explained well the selective phytotoxicity of alachlor. Both absorption and translocation contribute undoubtedly to the selectivity by influencing the active internal concentration of alachlor. However, neither of them appeared to be a primary factor. It was concluded that the most important primary factor was the rate of glutathione conjugation, which detoxifies alachlor and plays an important role in selectivity.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.5
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• pp.262-267
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• 2002

In this paper, we first studied the factors affecting the motor current (MC) signal, which was strongly affected by the systematic hardware noises depending on polishing such as pad conditioning and arm oscillation of platen and recipe, head motor. Next, we studied the end point detection (EPD) for the chemical mechanical polishing (CMP) process of shallow trench isolation (STI) with reverse moat structure. The MC signal showed a high amplitude peak in the fore part caused by the reverse meal. pattern. We also found that the EP could not be detected properly and reproducibly due to the pad conditioning effect, especially when conventional low selectivity slurry was used. Even when there was no pad conditioning effect, the EPD method could not be applied, since the measured end points were always the same due to the characteristics of the reverse moat structure with an open nitride layer.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.5-9
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• 2002

Chemical mechanical polishing (CMP) has become the preferred planarization method for multilevel interconnect technology due to its ability to achieve a high degree of feature level planarity. Especially, to achieve the higher density and greater performance, shallow trench isolation (STI)-CMP process has been attracted attention for multilevel interconnection as an essential isolation technology. Also, it was possible to apply the direct STI-CMP process without reverse moat etch step using high selectivity slurry (HSS). In this work, we determined the process margin with optimized process conditions to apply HSS STI-CMP process. Then, we evaluated the reliability and reproducibility of STI-CMP process through the optimal process conditions. The wafer-to-wafer thickness variation and day-by-day reproducibility of STI-CMP process after repeatable tests were investigated. Our experimental results show, quite acceptable and reproducible CMP results with a wafer-to-wafer thickness variation within 400$\AA$.