• Journal of Electrical Engineering and Technology
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• v.1 no.2
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• pp.237-240
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• 2006

The feasibility of a midgap metal gate is investigated for a 32 nm MOSFET for low power applications. The midgap metal gate MOSFET is found to deliver $I_{on}$ as high as a bandedge gate if a proper retrograde channel is used. An adequate design of the retrograde channel is essential to achieve the performance requirement given in the ITRS roadmap. A process simulation is also run to evaluate the feasibility of the necessary retrograde profile in manufacturing environments. Based on the simulated result, it is found that any subsequent thermal process should be tightly controlled to retain transistor performance, which is achieved using the retrograde doping profile. Also, the bandedge gate MOSFET is determined be more vulnerable to the subsequent thermal processes than the midgap gate MOSFET. A guideline for gate workfunction $(\Phi_m)$ is suggested for the 32 nm MOSFET.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1974-1976
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• 2005

The feasibility of a midgap metal gate is investigated for 32nm MOSFET low power applications. The midgap metal gate MOSFET is found to deliver a driving current as high as a bandedge gate one for the low power applications if a proper retrograde channel is used. An adequate design of the retrograde channel is essential to achieve the performance requirement given in ITRS roadmap. In addition, a process simulation is run using halo implants and thermal processes to evaluate the feasibility of the necessary retrograde profile in manufacturing environments. From the thermal budget point of view, the bandedge metal gate MOSFET is more vulnerable to the following thermal process than the midgap metal gate MOSFET since it requires a steeper retrograde doping profile. Based on the results, a guideline for the gate workfunction and the channel profile in the 32 nm MOSFET is proposed.

• Journal of radiological science and technology
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• v.20 no.1
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• pp.43-49
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• 1997

Purpose of this paper is to extend help for clinical application in balloon cholangiography on patients who have undergone endoscopic sphincterotomy, impacted stones of intrahepatic duct, and missed bile duct because of other diseases in operating endoscopic retrograde cholangiopancreatography. This study was done for the patients who had clinical signs of biliary diseases from January to December In 1996. We studied 45 patients who had endoscopic sphincterotomy, re-examination after interventional treatment of the endoscopic retrograde cholangiopancreatography, and uncertain diagnosis due to common bile duct and intrahepatic duct those are not filled with contrast media. Balloon cholangiography was performed in case of uncertain diagnosis while operating endoscopic retrograde cholangiopancreatography. First of all, we insert balloon catheter Into the working channel of treatment jejunofiberscope and remove treatment Jejunofiberscope after ballooning, and lastly take biliary tract X-ray after Injection and changing position of patient. The results of this study were as follows. (1) In classification of diseases, stones of gall bladder, those of common bile duct, and those of intrahepatic duct were 30 cases, fistula was 1 case. (2) In total cases of 45, only diagnosis were 25 cases, interventional treatment were 20 cases. (3) In case of interventional treatment, endoscopic sphincterotomy and endoscopic nasobiliary drainage, and stone removal were about the same, 7, 7, 6 respectively. Balloon cholangiography will be useful to prevent patients from having repeated and unnecessary studies for the cases above explained. It is considered that this study will be useful for clinical application in terms of reducing medical expenses, pain while examination, and consultation hours.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Journal of Electrical Engineering and information Science
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• v.3 no.2
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• pp.261-266
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• 1998

This paper describes the fabrication and characterization of dual-polysilicon gated surface channel 0.1$\mu\textrm{m}$ CMOSFETs using BF2 and arsenic as channel dopants. We have used and LDD structure and 40${\AA}$ gate oxide as an insulator. To suppress short channel effects down to 0.1$\mu\textrm{m}$ channel length, shallow source/drain extensions implemented by low energy implantation and SSR(Super Steep Retrograde) channel structure were used. The threshold voltages of fabricated CMOSFETs are 0.6V. The maximum transconductance of nMOSFET is 315${\mu}$S/$\mu\textrm{m}$, and that of pMOSFET is 156 ${\mu}$S/$\mu\textrm{m}$. The drain saturation current of 418 ${\mu}$A/$\mu\textrm{m}$, 187${\mu}$A/$\mu\textrm{m}$ are obtained. Subthreshold swing is 85mV/dec and 88mV/dec, respectively. DIBL(Drain Induced Barrier Lowering) is below 100mV. In the device with 2000${\AA}$ thick gate polysilicon, depletion in polysilicon near the gate oxide results in an increase of equivalent gate oxide thickness and degradation of device characteristics. The gate delay time is measured to be 336psec at operation voltage of 2V.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.120-131
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• 2007

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.

• International Journal of Oral Biology
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• v.30 no.2
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• pp.71-76
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• 2005

The mesencephalic trigeminal nucleus (Mes V) contains cell bodies of primary afferent sensory neurons that relay proprioceptive information from the periodontium and masticatory muscles and function as typical sensory neurons or potentially as integrative interneurons. In the present study, we studied these two potential functions using combined experimental approaches of retrograde labeling and whole cell patch clamp recording. Mes V neurons that presumably originate from periodontal nerve fibers in subsets of Mes V nucleus were identified by retrograde labeling with a fluorescent dye, DiI, which was applied onto inferior alveolar nerve. These cells were elliptical perikarya shaped cells about $40{\mu}m$ in diameter. In these neurons, we measured high voltage-activated calcium channel (HVACC) currents. $GABA_B$ agonist, baclofen, inhibited calcium currents, and the HVACC currents inhibition by baclofen was voltage-dependent, exhibited prepulse facilitation, indicating that it was mediated by $G_i/_G_o$ protein. Taken together, our results demonstrate that Mes V neurons not only have cell bodies originating from periodontium, but also receive synaptic inputs including GABAergic neurons suggesting that Mes V neurons function as both primary sensory neurons and integrative interneurons.

• ETRI Journal
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• v.27 no.4
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• pp.439-445
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• 2005

We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low power and high performance CMOS applications. By simply adopting 3 and 7 nm thick Si-cap layers in n-channel and p-channel MOSFETs, respectively, the transconductances and driving currents of both devices were enhanced by 7 to 37% and 6 to 72%. These improvements seemed responsible for the formation of a lightly doped retrograde high-electron-mobility Si surface channel in nMOSFETs and a compressively strained high-hole-mobility $Si_{0.8}Ge_{0.2}$ buried channel in pMOSFETs. In addition, the nMOSFET exhibited greatly reduced subthreshold swing values (that is, reduced standby power consumption), and the pMOSFET revealed greatly suppressed 1/f noise and gate-leakage levels. Unlike the conventional strained-Si CMOS employing a relatively thick (typically > 2 ${\mu}m$) $Si_xGe_{1-x}$ relaxed buffer layer, the strained-SiGe CMOS with a very thin (20 nm) $Si_{0.8}Ge_{0.2}$ layer in this study showed a negligible self-heating problem. Consequently, the proposed strained-SiGe CMOS design structure should be a good candidate for low power and high performance digital/analog applications.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1003-1006
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• 2003

본 논문에서는 sub-micron 소자에서 SCE(Short Channel Effect) 억제를 위한 Halo 와 SSR(Super Steep Retrograde Well) 적용에 따른 analog 특성의 열화를 석하고 이를 개선하기 위해 Twist 이온주입과 In, Sb Halo 를 채택하였다. Analog 특성은 CMOS 의 amplifier 과 Comparator 로의 사용을 고려해 Drain Rout과 Early voltage를 이용해 나타내었으며 Digital 성능을 함께 고려하였다. 실험결과 NMOS 의 경우 45 twist Halo 조건에서, PMOS의 경우 As보다 Sb를 Halo 로 적용하는 경우 더 우수한 analog 특성을 나타내었다.

• Journal of Veterinary Clinics
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• v.33 no.6
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• pp.372-375
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• 2016

A four-year old, intact male, mixed-breed dog had a history of chronic snoring sound and dyspnea. Based on the results of computed tomography, the patient was diagnosed as nasopharyngeal stenosis. Balloon dilatation in the area of stenosis was performed using a balloon dilator inserted retrograde fashion through the working channel of an endoscope. Clinical signs were relieved but reappeared after 3 weeks. Thirty-four days following the first balloon dilatation treatment, a second procedure was performed; the balloon catheter was inserted in antegrade fashion through the left nostril and was filled with contrast agent under fluoroscopic guidance. Because of the relapse of clinical signs after 6 months, the patient received additional balloon dilatation procedure by the antegrade approach. At the one-year follow-up, the owner said that the clinical signs of nasopharyngeal stenosis had been completely resolved. Balloon dilatation could be a minimally invasive and effective treatment for nasopharyngeal stenosis, although the repetition of the procedure may be required.