• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.685-694
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• 2015

In this paper, a new dynamic reference scheme is proposed to improve the read voltage margin better than the previous static reference scheme. The proposed dynamic reference scheme can be helpful in compensating not only the background pattern dependence but also the cell position dependence. The proposed dynamic reference is verified by simulating the CMOS-memristor hybrid circuit using the practical CMOS SPICE and memristor Verilog-A models. In the simulation, the percentage read voltage margin is compared between the previous static reference scheme and the new dynamic reference scheme. Assuming that the critical percentage of read voltage margin is 5%, the memristor array size with the dynamic scheme can be larger by 60%, compared to the array size with the static one. In addition, for the array size of $64{\times}64$, the interconnect resistance in the array with the dynamic scheme can be increased by 30% than the static reference one. For the array size of $128{\times}128$, the interconnect resistance with the proposed scheme can be improved by 38% than the previous static one, allowing more margin on the variation of interconnect resistance.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.473-476
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• 2004

AS supply voltage of DRAM is scaled down, voltage circuit that is stable from external noise is more important. $V_{PP}$ voltage is very important, it is biased to gate of memory cell transistor and possible to read and write without voltage down. It has both high pump gain and high power efficiency therefore charge pump circuit is proposed. The circuit is simulated by 0.18${\mu}m$ memory process and 1.2V supply voltage. Compare to CCTS, it is improved 0.43V of pump gain, $3.06\%$ of power efficiency at 6 stage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05b
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• pp.154-158
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• 2003

In this study, to measure the density of compaction, it is designed to use the 5 gamma-ray detectors. The developed instrument consists of measuring circuits for gamma-rays and thermal neutrons, a high voltage supply unit, stable circuit unit, count circuit unit and a microprocessor. To read count pulse from gamma-ray detectors are very accurate and it can be count to data calibration excluded count of ripple.

• Journal of Microbiology and Biotechnology
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• v.32 no.8
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• pp.1026-1033
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• 2022

This study presents a novel DNA part characterization technique that increases throughput by combinatorial DNA part assembly, solid plate-based quantitative fluorescence assay for phenotyping, and barcode tagging-based long-read sequencing for genotyping. We confirmed that the fluorescence intensities of colonies on plates were comparable to fluorescence at the single-cell level from a high-end, flow-cytometry device and developed a high-throughput image analysis pipeline. The barcode tagging-based long-read sequencing technique enabled rapid identification of all DNA parts and their combinations with a single sequencing experiment. Using our techniques, forty-four DNA parts (21 promoters and 23 RBSs) were successfully characterized in 72 h without any automated equipment. We anticipate that this high-throughput and easy-to-use part characterization technique will contribute to increasing part diversity and be useful for building genetic circuits and metabolic pathways in synthetic biology.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.3
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• pp.177-182
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• 2003

In the case of the flash memory, various kinds of transistors and the wide range of operation voltage are necessary to achieve the read/write operations. Therefore, the characteristics of transistors are measured in the silicon for the circuit design, and the test vehicle run must be processed. In this study, an efficient design flow is suggested using TCAD tools. The test vehicle is replaced with well-calibrated TCAD simulation. First, the calibration methodology is introduced and tested for flash memory device. The calibration errors are less than 5% of a full chip operation, which is accepted by the designers. The results of the calibration were used to predict I-V curves and model parameter of the various transistors for the design of flash device.

• Journal of Sensor Science and Technology
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• v.26 no.3
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• pp.192-198
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• 2017

In this paper, we newly developed a passive transponder for visible light identification (VLID) using ultrasonic wave. The solar cell in the transponder receives the reader light and generates current for supplying power to the transponder circuit. At the same time the solar cell detects the interrogating signal in the visible light from the reader. The transponder recognizes the interrogating signal and generates the responding signal using ultrasonic wave. In experiments, we used 40 kHz ultrasonic wave for the responding signal from the transponder. The maximum read distance was about 3.4 m when the transponder was exposed to the reader light of 24W LED array.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.309-314
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• 2014

This work proposes an integrated high frequency divider with an inductive peaking technique implemented in a current mode logic (CML) frequency divider. The proposed divider is composed with a master-slave flip-flop, and the master-slave flip-flop acts as a latch and read circuits which have the differential pair and cross-coupled n-MOSFETs. The cascode bias is applied in an inductive peaking circuit as a current source and the cascode bias is used for its high current driving capability and stable frequency response. The proposed divider is designed with $0.18-{\mu}m$ CMOS process, and the simulation used to evaluate the divider is performed with phase-locked loop (PLL) circuit as a feedback circuit. A divide-by-two operation is properly performed at a high frequency of 20 GHz. In the output frequency spectrum of the PLL, a peak frequency of 2 GHz is obtained witha divide-by-eight circuit at an input frequency of 250 MHz. The reference spur is obtained at -64 dBc and the power consumption is 13 mW.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.105-113
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• 2004

This paper presents a design method for an asynchronous memory with a completion signal generation circuit meeting D-I model. The proposed design method is to generates a completion signal with dummy cell and a completion signal generation circuit to indicate completion of the required read or write operation to the processor. Dividing a memory exponentially to consider delay of a bit-line and a memory cell makes memory operates as a D-I model with minimum addition of redundant circuit. The proposed memory partitioning algorithm that divides entire memory into the several partitions with a exponentially increased size reduces the memory access delay by 40% compared with a conventional partitioning method to the same size.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.8
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• pp.113-118
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• 2016

In this paper, a read-in integrated circuit (RIIC) for IR scene projectors (IRSPs) adopting a sub-frame control technique is proposed, which minimizes the reduction of the apparent temperature of the IR images projected from IRSPs operating at a frame rate of 30 Hz. The proposed sub-frame control technique significantly reduces the amount of scene data loss on capacitors, which is caused by leakage currents flowing through MOSFET switches during holding periods, by dividing a unit frame into 8 sub-frames and refreshing the same scene data for each sub-frame. A current-drive RIIC was designed for the higher apparent temperature of IR radiated from the emitter, and it receives the scene data as a form of analog voltages from an external DAC. A prototype chip with a $64{\times}32$ RIIC array was fabricated using Magnachip/SKhynix $0.35{\mu}m$ 2-poly 4-metal CMOS process, and the measured maximum output data current is $230.3{\mu}A$. This amount of current ensures the projection of IR images whose maximum apparent temperature is $366.2^{\circ}C$ in the mid-wavelength IR (MWIR) when applied to a prototype emitter having a resistance of $15k{\Omega}$.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.11 no.6
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• pp.742-750
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• 2018

In this paper, in order to enable zero-layer FTP cell using only 5V MOS devices on the basis of $0.13{\mu}m$ BCD process, the tunnel oxide thickness is used as the gate oxide thickness of $125{\AA}$ of the 5V MOS device at 82A. The HDNW layer, which is the default in the BCD process, is used. Thus, the proposed zero layer FTP cell does not require the addition of tunnel oxide and DNW mask. Also, from the viewpoint of memory IP design, a single memory structure which is used only for trimming analog circuit of PMIC chip is used instead of the dual memory structure dividing into designer memory area and user memory area. The start-up circuit of the BGR (Bandgap Reference Voltage) generator circuit is designed to operate in the voltage range of 1.8V to 5.5V. On the other hand, when the 64-bit FTP memory IP is powered on, the internal read signal is designed to maintain the initial read data at 00H. The layout size of the 64-bit FTP IP designed using the $0.13-{\mu}m$ Magnachip process .is $485.21{\mu}m{\times}440.665{\mu}m$($=0.214mm^2$).