• Transactions on Electrical and Electronic Materials
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• 제1권2호
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• pp.23-27
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• 2000

Indium in oxide(ITO) films have been deposited on PET and glass substrates by DC reactive magnetron sputtering without post-deposition thermal treatment, The high quality for microstructure, electrical and optical properties of the as-deposited ITO films on unheated substrates is dominated by the sputtering parameters, The influence of the working gas pressure, DC power and oxygen partial pressure has been systematically investigated, The lowest DC power, and oxygen partial pressure has been systematically investigated, The lowest resistivity of ITO films deposited on PET substrates was 6$\times$10$^{-4}$ $\Omega$cm. It has been obtained at a working pressure of 3 mTorr and DC power of 30 W. The sheet resistance and optical transmittance of these film were 22 $\Omega$/square and 84% respectively. The best values of figures of merit for the electrical and optical characteristics such as T/ $R_{sh}$ and $T^{10}$ / $R_{sh}$ are approximately 38.1 and 7.95($\times$10$^{-3}$ $\Omega$$^{-1}$ ), respectively.

• 한국결정학회지
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• 제11권3호
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• pp.167-172
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• 2000

CaTiO₃:Pr phosphor thin films were prepared on Si(100), ZnO/glass, Corning glass and ITO/glass by rf magnetron reactive sputtering. The effects of deposition parameters such as oxygen partial pressure, substrate temperature, and annealing conditions on crystallinity and compositional variation of the films were investigated. PL spectra of CaTiO₃:Pr phosphor thin films exhibited red regime peaking at 613 nm and enhanced PL intensity was observed for the film annealed in vacuum atmosphere as compared to the deposit annealed in N₂ environment.

• 한국태양에너지학회 논문집
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• 제26권4호
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• pp.55-61
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• 2006

Titanium oxide ($TiO_2$) films are deposited on the indium tin oxide (ITO) substrate in an $Ar/O_2$ atmosphere by using reactive RF (Radio Frequency) magnetron sputtering technique, and Electrochromic properties and durability of $TiO_2$ films deposited at different preparation conditions are investigated by using UV-VIS spectrophotometer and cyclic voltammetry Li+ interalation/deintercalation in $TiO_2$ films shows that the electrochromic properties and durability of as-deposited films strongly depend on gas pressure $TiO_2$ films formed in our sputtering conditions are found to remain transparent, irrespective of their Li+ ion contents. The optimum sputtering conditions for film as passive counter electrode in electrochromic devices are working pressure of $1.0\;{\times}\;10^{-2}\;torr$ and oxygen flow raes of $10{\sim}15\;sccm$, respectively.

• 한국재료학회지
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• 제20권9호
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• pp.494-499
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• 2010

Tin oxide thin films were prepared on borosilicate glass by rf reactive sputtering at different deposition powers, process pressures and substrate temperatures. The ratio of oxygen/argon gas flow was fixed as 10 sccm / 60 sccm in this study. The structural, electrical and optical properties were examined by the design of experiment to evaluate the optimized processing conditions. The Taguchi method was used in this study. The films were characterized by X-ray diffraction, UV-Vis spectrometer, Hall effect measurements and atomic force microscope. Tin oxide thin films exhibited three types of crystal structures, namely, amorphous, SnO and $SnO_2$. In the case of amorphous thin films the optical band gap was widely spread from 2.30 to 3.36 eV and showed n-type conductivity. While the SnO thin films had an optical band gap of 2.24-2.49 eV and revealed p-type conductivity, the $SnO_2$ thin films showed an optical band gap of 3.33-3.63 eV and n-type conductivity. Among the three process parameters, the plasma power had the most impact on changing the structural, electrical and optical properties of the tin oxide thin films. It was also found that the grain size of the tin oxide thin films was dependent on the substrate temperature. However, the substrate temperature has very little effect on electrical and optical properties.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1995년도 제8회 학술발표회 논문개요집
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• pp.110-110
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• 1995

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.73-74
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• 1998

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 춘계학술발표회
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• pp.31-31
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• 1996

• 한국세라믹학회지
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• 제34권2호
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• pp.209-215
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• 1997

Reactive Single Ion Beam Sputtering 방법을 이용하여 AIN박막을 증착하고 물성을 분석하였다. 반응성 가스로 질소 가스 또는 암모니아 가스를 이용하였다. 증착된 AIN박막의 구조적, 화학적, 광학적 물성을 분석하기 위해 XRD, GAXRD, TEM, SEM, XPS, UV/VIS spectrophotometer, FT-IR등을 이용하였다. XRD, GAXRD분석결과에 의하면 증착된 모든 AIN박막은 비정질이었으나 TEM분석결과에서는 비정질 속에 육방정의 AIN미세결정들이 분포해 있었다. 그리고 FT-IR과 XPS분석을 통하여 Al-N결합을 확인하였으며, 화학양론적인 조성이 됨에 따라 UV-VIS spectrophotometery 분석에서 투광성이 증가하며 광학적 밴드갭은 6.2eV까지 증가함을 확인하였다. 또한 단면과 표면 형상관찰에서는, 반응성 가스로 질소 가스나 암모니아 가스에 관계없이, 결정입계가 전혀 관찰되지 않는 아주 평활한 현상이었으며 굴절율은 1.6~1.7의 값을 갖는다.

• 한국표면공학회지
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• 제49권5호
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• pp.461-466
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• 2016

Nanocrystalline vanadium nitride (VN) coatings were deposited using asymmetric bipolar pulsed dc sputtering to further understand the influence of the pulsed plasmas on the crystal structure, microstructure and mechanical properties. Properties of VN coatings were investigated with FE-SEM, XRD and nanoindentation. The results show that, with the increasing pulse frequency and decreasing duty cycle, the coating morphology changed from a porous columnar to a dense structure, with finer grains. Asymmetric bipolar pulsed dc sputtered VN coatings showed higher hardness, elastic modulus and residual compressive stress than dc sputtered VN coatings. The results suggest that asymmetric bipolar pulsed dc sputtering technique is very beneficial for the reactive sputtering deposition of VN coatings.

• 한국표면공학회지
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• 제35권2호
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• pp.113-121
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• 2002

We have investigated insulating properties of $SiO_2$ interlayer for the thin film strain gauge, which were prepared by RF magnetron sputtering method in various deposition conditions, such as Ar pressure, gas flow rates and sputtering gases. SEM, AFM and FT-IR techniques were used to analyze its structures and composition. As the Ar pressure and the flow rate increased, the insulating interlayer showed low insulating resistance due to its porous structure and defects. Oxygen deficiency in $SiO_2$ was decreased as fabricated by hydrogen reactive sputtering. We could enhance the surface mobility of sputtered adatoms by using Ar/$H_2$ sputtering gas and obtain a good surface roughness and insulating property. The optimum insulating resistance of 9.22 G$\Omega$ was obtained in Ar/30% $H_2$ mixed gas, flow rate 10sccm, and 1mTorr.