• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.82-82
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• 1999

Ferroelectric materials are characterized by the existence of a spontaneous remnant polarization that can be switched between two stable states by an applied field. This phenomenon is known as ferroelectricity. The ferroelectricity can be utilized for nonvolatile memory application. Up to now 256K FRAM was successfully fabricated and sold in the memory market. This paper will briefly review the current statue of ferroelectric random access memory (FRAM) focusing on recent developments. In addition, the future prospects of FRAM will be addressed.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.11A
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• pp.904-908
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• 2009

The PZT(lead, zirconium, titanium) based ceramics which, are reported to be ferroelectric materials have their important applications in the areas of surface acoustic waves (SAW), filters, infrared detectors, actuators, ferroelectric random acess memory, speakers, electronic switches etc. Moreover, these PZT materials possess the large electromechanical coupling factor, large spontaneous polarization, low dielectric loss and low internal stress etc. Hence, keeping in view the unique properties of PZT piezoelectric ceramics we also tried to synthesize indigenously the small sized PZT ceramic powder in the laboratory by using the modified sol-gel approach. In this paper, Propyl alcohol based sol-gel method was used for preparation of PZT piezoelectric ceramic. The powder obtained by this sol-gel process was calcined and sintering to reach a pyrochlore-free crystal phase. The characterization of synthesized material was carried out by the XRD analysis and the surface morphology was determined by high resolution scanning electron microscopy.

• Current Optics and Photonics
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• v.5 no.2
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• pp.155-163
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• 2021

We propose a novel optical encryption scheme for cipher-feedback-block (CFB) mode, capable of encrypting two-dimensional (2D) page data with the use of two-step phase-shifting digital interferometry utilizing orthogonal polarization, in which the CFB algorithm is modified into an optical method to enhance security. The encryption is performed in the Fourier domain to record interferograms on charge-coupled devices (CCD)s with 256 quantized gray levels. A page of plaintext is encrypted into digital interferograms of ciphertexts, which are transmitted over a digital information network and then can be decrypted by digital computation according to the given CFB algorithm. The encryption key used in the decryption procedure and the plaintext are reconstructed by dual phase-shifting interferometry, providing high security in the cryptosystem. Also, each plaintext is sequentially encrypted using different encryption keys. The random-phase mask attached to the plaintext provides resistance against possible attacks. The feasibility and reliability of the proposed CFB method are verified and analyzed with numerical simulations.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.3 no.2 s.5
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• pp.119-128
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• 2004

Recently, the accidents on the sea have arisen due to the increase of the nautical traffic and the digitization of equipments for marine. Therefore, IMO(International Maritime Organization) have provided the recommendation of EMI and EMS for radio communication and equipments of marine from SOLAS convention at July 1st 2002. In this paper, we measured EMC environment on the Hanbada, which is Korea Maritime University training ship, for basic EMC environment of ship. The measuring point was Bridge and Engine Control Room of the ship, we measured at the test point that was set at random. Measured Band is from 30 MHz to 2 GHz, polarization measurement is processed both vertical and horizontal polarization. We analysed the results in consideration of permissible criteria.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.464-469
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• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.

• Korean Journal of Materials Research
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• v.14 no.10
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• pp.701-706
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• 2004

Bismuth layered structure ferroelectric thin films, La-substituted $Bi_{4}Ti_{3}O_{12}$ ($Bi_{1-x}La_{x}Ti_{3}O_{12}$, x=0.75, BLT) were prepared on the $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin coating process. The thin films were annealed in various conditions, i.e., oxygen, nitrogen and vacuum atmospheres for various annealing time. We investigated the annealing condition effects on the grain orientation and ferroelectric properties. The measured XRD patterns revealed that the BLT thin films showed only $Bi_{4}Ti_{3}O_{12}$-type phase with random orientation. $La^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of $Bi_{4}Ti_{3}O_{12}$ decreased the degree of c-axis orientation and increased the remanent polarization ($2P_{r}$). The remanent polarization ($2P_{r}$) and the coercive field ($2E_{c}$) of the BLT thin film annealed at $650^{\circ}C$ for 5 min in oxygen atmosphere were $87{\mu}C/cm^2$ and 182 kV/cm, respectively, at an applied electric field of 240 kV/cm. For all of the BLT thin films annealed in various conditions, the fatigue resistance was shown. The improvement of ferroelectric properties with La substitution in $Bi_{4}Ti_{3}O_{12}$ could be attributed to the changes in space charge densities and grain orientation in the thin film.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.6
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• pp.590-598
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• 2002

We have numerically analyzed the electromagnetic wave scattering from randomly rough dielectric surfaces by using the finite volume time domain (FVTD) method. We have then shown that the present method yields a reasonable solution even at low-grazing angle (LGA). It should be noted that the number of sampling points per wavelength should be increased when more accurate numerical results are required, which fact makes the computer simulation impossible at LGA for a stable result. However, when the extrapolation is used for calculating the scattered field, an accurate result can be estimated. If we want to obtain the ratio of backscattering between the horizontal and vertical polarization, we do not need the large number of sampling points. The results are compared with the experimental data.

• Geophysics and Geophysical Exploration
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• v.15 no.4
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• pp.235-244
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• 2012

Nuclear magnetic resonance (NMR) logging has been considered one of the most complicated nevertheless, one of the most powerful logging methods for the characterization on of both rocks and natural fluids in formation. NMR measures magnetized signals (polarization and relaxation) between the properties of hydrogen nucleus called magnetic moment and applied magnetic fields. The measured data set contains two important petrophysical properties such as density of hydrogen in the fluids inside the pore space and the distinct decay rate for fluid type. Therefore, after the proper data processing, key petrophysical information, not only the quantities and properties of fluids but also supplies of rock characterization in a porous medium, could be archived. Thus, based on this information, several ongoing researches are being developed in estimating aspects of reservoir productivity information, permeability and wettability since it is the key to having correct interpretation. This study goes through the basic theory of NMR at first, and then reviews NMR logging tools as well as their technical characteristics. This paper also briefly discusses the basic knowledge of NMR simulation algorithm by using Random walk.

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.223-226
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• 2004

The PZT thin films are one of well-known materials that has been widely studied for ferroelectric random access memory (FRAM). We etched the PZT thin films by $CF_{4}/(Cl_{2}+Ar)$ plasma and investigated improvement in etching damage by $O_{2}$ annealing. The maximum etch rate of the PZT thin films was 157 nrn/min and that the selectivity of the PZT thin films to Pt was 3.1 when $CF_{4}(30{\%})$ was added to a $Cl_{2}(80{\%})/Ar(20{\%})$ gas mixing ratio. To improve the ferroelectric properties of PZT thin films after etching, the samples were annealed for 10 min at various temperatures in $O_{2}$ atmosphere. After $O_{2}$ annealing, the remanent polarization of the asdeposited films was $34.6{\mu}/cm^{2}$ and the sample annealed at 650, 550, and $450^{\circ}C$ was 32.8, 22.3, and $18.6{\mu}/cm^{2}$, respectively. PZT thin films with $O_{2}$ annealing at $450^{\circ}C$ retained $77{\%}$ of their original polarization at 106 cycles. Also as the annealing temperature increased, the fatigue properties improved. And the leakage current was decreased gradually and almost recovered to the as-deposited value after the annealing at $450^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.783-787
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• 2002

In recent year, B $i_{4-}$x L $a_{x}$ $Ti_3$ $O_{12(BLT)}$ is one of promising substitute materials for the ferroelectric random access memory(FRAM) applications. But the systematic composition is still insufficient, so this experiment was carried out in ceramic ambient sintering process which has the very excellent ferroelectric property. Samples were prepared by a bulk and the purpose which was estimated with a suitability of thin films applications. The density of B $i_{3.75}$ L $a_{0.25}$ $Ti_3$ $O_{12}$ was high and the XRD pattern showed that the intensity of main peak (117) was increased at the argon ambient sintering. Controlling the quantity of oxygen, crystallization showed a thin, long plate like type, and we obtained the excellent dielectric and polarization properties at the argon atmosphere sintering. Also this sintering process was effective at the bulk sample. Argon ambient sintered sample produced higher permittivity of 154, the remanent polarization(2Pr) of 6.8 uC/$\textrm{cm}^2$ compared with that sintered in air and oxygen ambient. And this sintering process showed a possibility which could be applied to thin films process..