Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)

The Korean Vacuum Society (한국진공학회)
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Principle, current status and developing trend of FRAM

  • Chung, Il-Sub (Microelectronics Lab., Material and Device Sector Samsung Advanced Institute of Technology) ;
  • Yi, In-Sook (Microelectronics Lab., Material and Device Sector Samsung Advanced Institute of Technology) ;
  • Lee, Jung-Ho (Microelectronics Lab., Material and Device Sector Samsung Advanced Institute of Technology)
  • Published : 1999.07.01
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Abstract

Ferroelectric materials are characterized by the existence of a spontaneous remnant polarization that can be switched between two stable states by an applied field. This phenomenon is known as ferroelectricity. The ferroelectricity can be utilized for nonvolatile memory application. Up to now 256K FRAM was successfully fabricated and sold in the memory market. This paper will briefly review the current statue of ferroelectric random access memory (FRAM) focusing on recent developments. In addition, the future prospects of FRAM will be addressed.

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