• Title/Summary/Keyword: r-lattice

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Effects of Sintering Additives on the Thermal and Mechanical Properties of AlN by Pressureless Sintering (상압소결 질화알루미늄의 소결 첨가제 변화에 따른 열적 및 기계적 특성)

  • Hwang, Jin Uk;Mun, So Youn;Nam, Sang Yong;Dow, Hwan Soo
    • Journal of Powder Materials
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    • v.26 no.5
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    • pp.395-404
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    • 2019
  • Aluminum nitride (AlN) has excellent electrical insulation property, high thermal conductivity, and a low thermal expansion coefficient; therefore, it is widely used as a heat sink, heat-conductive filler, and heat dissipation substrate. However, it is well known that the AlN-based materials have disadvantages such as low sinterability and poor mechanical properties. In this study, the effects of addition of various amounts (1-6 wt.%) of sintering additives $Y_2O_3$ and $Sm_2O_3$ on the thermal and mechanical properties of AlN samples pressureless sintered at $1850^{\circ}C$ in an $N_2$ atmosphere for a holding time of 2 h are examined. All AlN samples exhibit relative densities of more than 97%. It showed that the higher thermal conductivity as the $Y_2O_3$ content increased than the $Sm_2O_3$ additive, whereas all AlN samples exhibited higher mechanical properties as $Sm_2O_3$ content increased. The formation of secondary phases by reaction of $Y_2O_3$, $Sm_2O_3$ with oxygen from AlN lattice influenced the thermal and mechanical properties of AlN samples due to the reaction of the oxygen contents in AlN lattice.

Growth of $CaF_{2}:R^{+3}$ (R=Nd, Er) layers by molecular beam epitaxy (Molecular beam epitaxy법에 의한 희토류 이온$(Nd^{3+},\;Er^{3+})$ 첨가 $CaF_{2}$ 박막의 성장)

  • ;Yefen Chen;Tsuguo Fukuda
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.1
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    • pp.1-5
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    • 1999
  • The rare-earth ions ($R^{3+}$, R=Nd, Er) doped $CaF_{2}$ layers have been grown on $CaF_{2}$ (111) substrate by molecular beam epitaxy. The surface structure and the crystallinity of $CaF_{2}:R^{3+}$ layers depending on the doping concentration of $R^{3+}$ and layer thickness were studied by reflection high-energy electron diffraction (RHEED). In aspect of application as buffer layer in semiconductor-related hybrid structure, the lattice displacement between $CaF_{2}:R^{3+}$ layers and $CaF_{2}$ (111) substrate was investigated by X-ray rocking curve analysis.

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FREE ALGEBRAS OVER A POSET IN VARIETIES

  • Figallo, Aldo Jr;Ziliani, Alicia
    • Communications of the Korean Mathematical Society
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    • v.26 no.4
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    • pp.543-549
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    • 2011
  • In 1945, the notion of free lattice over a poset was introduced by R. Dilworth (Trans. Am. Math. Soc. 57 (1945), 123{154). In this note, a construction of the free algebra over a poset in varieties finitely generated is shown. Finally, this result is applied to different classes of algebras.

HILBERT-SCHMIDT INTERPOLATION FOR OPERATORS IN TRIDIAGONAL ALGEBRAS

  • Kang, Joo-Ho;Kim, Ki-Sook
    • Journal of applied mathematics & informatics
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    • v.10 no.1_2
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    • pp.227-233
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    • 2002
  • Given operators X and Y acting on a Hilbert space H, an interpolating operator is a bounded operator A such that AX = Y. An interpolating operator for n-operators satisfies the equation AX$\sub$i/=Y$\sub$i/, for i=1,2, ‥‥, R. In this article, we investigate Hilbert-Schmidt interpolation for operators in tridiagonal algebras.

CONGRUENCES ON ABUNDANT SEMIGROUPS WITH QUASI-IDEAL S-ADEQUATE TRANSVERSALS

  • Wang, Lili;Wang, Aifa
    • Communications of the Korean Mathematical Society
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    • v.29 no.1
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    • pp.1-8
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    • 2014
  • In this paper, we give congruences on an abundant semigroup with a quasi-ideal S-adequate transversal $S^{\circ}$ by the congruence pair abstractly which consists of congruences on the structure component parts R and ${\Lambda}$. We prove that the set of all congruences on this kind of semigroups is a complete lattice.

Introduction to Concept in Association Rule Mining (연관규칙 마이닝에서의 Concept 개요)

  • ;;R. S. Famakrishna
    • Proceedings of the Korean Information Science Society Conference
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    • 2002.04b
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    • pp.100-102
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    • 2002
  • 데이터 마이닝의 대표적인 기법인 연관규칙 마이닝을 위한 다양만 알고리즘들이 제안되었고, 각 알고리즘에 따른 대용량 데이터에 대한 신속한 탐색을 위한 독특한 자료구조가 제안되었다 각 자료구조의 특성에 따른 알고리즘 성능은 데이터의 패턴에 크게 의존한다. 본 논문에서는 Concept을 형성하는 세가지 대표적인 자료구조인 Hash Tree, Lattice. FP-Tree에 대해 비교 분석해보고, 데이터 패턴에 적합한 효율적인 알고리즘의 설계 위한 framework을 제안한다.

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Valence State of the Sm Metal

  • Jang, Y.R.;Min, Byung-Il
    • Journal of Magnetics
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    • v.3 no.1
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    • pp.1-3
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    • 1998
  • Valence state of the Sm metal is investigated using the total energy linearized muffin-tin orbital (LMTO) band method for the observed Sm-type crystal structure. We have considered both the relativistic and the semi-relativistic description of 4f-core electrons. We have found that, in the paramagnetic phase of bulk Sm, the trivalent valence state is more stable at the observed lattice constant than the divalent valence state.

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Improved Photolysis of Water from Ti Incorporated Double Perovskite Sr2FeNbO6 Lattice

  • Borse, P.H.;Cho, C.R.;Yu, S.M.;Yoon, J.H.;Hong, T.E.;Bae, J.S.;Jeong, E.D.;Kim, H.G.
    • Bulletin of the Korean Chemical Society
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    • v.33 no.10
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    • pp.3407-3412
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    • 2012
  • The Ti incorporation at Fe-site in the double perovskite lattice of $Sr_2FeNbO_6$ (SFNO) system is studied. The Ti concentration optimization yielded an efficient photocatalyst. At an optimum composition of Ti as x = 0.07 in $Sr_2Fe_{1-x}Ti_xNbO_6$, the photocatalyst exhibited 2 times the quantum yield for photolysis of $H_2O$ in presence of $CH_3OH$, than its undoped counterpart under visible light (${\lambda}{\geq}420nm$). Heavily Ti-doped $Sr_2Fe_{1-x}Ti_xNbO_6$ lattice exhibited poor photochemical properties due to the existence of constituent impurity phases as observed in the structural characterization, as well as deteriorated optical absorption. The higher electron-density acquired by n-type doping seem to be responsible for the more efficient charge separation in $Sr_2Fe_{1-x}Ti_xNbO_6$ (0.05 < x < 0.4) and thus consequently displays higher photocatalytic activity. The Ti incorporated structure also found to yield stable photocatalyst.

THE PROBABILISTIC METHOD MEETS GO

  • Farr, Graham
    • Journal of the Korean Mathematical Society
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    • v.54 no.4
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    • pp.1121-1148
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    • 2017
  • Go is an ancient game of great complexity and has a huge following in East Asia. It is also very rich mathematically, and can be played on any graph, although it is usually played on a square lattice. As with any game, one of the most fundamental problems is to determine the number of legal positions, or the probability that a random position is legal. A random Go position is generated using a model previously studied by the author, with each vertex being independently Black, White or Uncoloured with probabilities q, q, 1 - 2q respectively. In this paper we consider the probability of legality for two scenarios. Firstly, for an $N{\times}N$ square lattice graph, we show that, with $q=cN^{-{\alpha}}$ and c and ${\alpha}$ constant, as $N{\rightarrow}{\infty}$ the limiting probability of legality is 0, exp($-2c^5$), and 1 according as ${\alpha}$ < 2/5, ${\alpha}=2/5$ and ${\alpha}$ > 2/5 respectively. On the way, we investigate the behaviour of the number of captured chains (or chromons). Secondly, for a random graph on n vertices with edge probability p generated according to the classical $Gilbert-Erd{\ddot{o}}s-R{\acute{e}}nyi$ model ${\mathcal{G}}$(n; p), we classify the main situations according to their asymptotic almost sure legality or illegality. Our results draw on a variety of probabilistic and enumerative methods including linearity of expectation, second moment method, factorial moments, polyomino enumeration, giant components in random graphs, and typicality of random structures. We conclude with suggestions for further work.

Properties of CdS:In Thin Films according to Substrate Temperature

  • Park, G.C;Lee, J.;Chang, H.D.;Jeong, W.J.;Park, J.Y.;Kim, Y.J.;Yang, H.H.;Yoon, J.H.;Park, H.R.;Lee, K.S.;Gu, H.B.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.857-860
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    • 2004
  • Cubic CdS thin film with the strongest XRD peak (111) at diffraction angle $(\theta)$ of 26.5 was well made at substrate temperature of $150^{\circ}C$. At that time, lattice constant a of the thin film was $5.79{\AA}$, grain size of that was more over ${\mu}m$ and it's resistivity was over $10^3{\Omega}cm$. And the peak of diffraction intensityat miller index (111) of CdS:In thin film with dopant In of 1 atom% was shown higher about 20 % than undoped CdS thin film. Also, CdS:In thin film had in part hexagonal structure among cubic structure as secondary phase. Lattice constant of a and grain size of secondary phase of the film with dopant In of 1 atom% was $5.81{\AA}$ and around $1{\mu}m$ respectively The lowest resistivity of $5.1{\times}10^{-3}{\Omega}cm$ was appeared on dopant In of 1.5 atom%. Optical band gap of undoped CdS thin film was 2.43 eV and CdS:In thin film with dopant In of 0.5 atom% had the largest band gap 2.49 eV.

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