Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Properties of CdS:In Thin Films according to Substrate Temperature

  • Park, G.C (Department of Electrical Engineering and Electronics, Mokpo Natl University) ;
  • Lee, J. (Department of Electrical Engineering and Electronics, Mokpo Natl University) ;
  • Chang, H.D. (Department of Electrical Engineering and Electronics, Mokpo Natl University) ;
  • Jeong, W.J. (Department of Electrical Engineering and Electronics, Mokpo Natl University) ;
  • Park, J.Y. (Department of Electrical Engineering and Electronics, Mokpo Natl University) ;
  • Kim, Y.J. (Department of Electrical Engineering and Electronics, Mokpo Natl University) ;
  • Yang, H.H. (Department of Electrical Engineering and Electronics, Mokpo Natl University) ;
  • Yoon, J.H. (Department of Electrical Engineering and Electronics, Mokpo Natl University) ;
  • Park, H.R. (Department of Phisics Mokpo Natl University) ;
  • Lee, K.S. (Department of Electrical Engineering and Electronics, Dongshin Natl University) ;
  • Gu, H.B. (Department of Electrical Engineering and Electronics, ChonNam Natl University)
  • Published : 2004.07.05
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Abstract

Cubic CdS thin film with the strongest XRD peak (111) at diffraction angle $(\theta)$ of 26.5 was well made at substrate temperature of $150^{\circ}C$. At that time, lattice constant a of the thin film was $5.79{\AA}$, grain size of that was more over ${\mu}m$ and it's resistivity was over $10^3{\Omega}cm$. And the peak of diffraction intensityat miller index (111) of CdS:In thin film with dopant In of 1 atom% was shown higher about 20 % than undoped CdS thin film. Also, CdS:In thin film had in part hexagonal structure among cubic structure as secondary phase. Lattice constant of a and grain size of secondary phase of the film with dopant In of 1 atom% was $5.81{\AA}$ and around $1{\mu}m$ respectively The lowest resistivity of $5.1{\times}10^{-3}{\Omega}cm$ was appeared on dopant In of 1.5 atom%. Optical band gap of undoped CdS thin film was 2.43 eV and CdS:In thin film with dopant In of 0.5 atom% had the largest band gap 2.49 eV.

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