• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.94-98
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• 2020

The core/shell of nanowires (NWs) with Cu-doped CdSe quantum dots were fabricated as an electron transport layer (ETL) for perovskite solar cells, based on ZnO/TiO2 arrays. We presented CdSe with Cu2+ dopants that were synthesized by a colloidal process. An improvement of the recombination barrier, due to shell supplementation with Cu-doped CdSe quantum dots. The enhanced cell steady state was attributable to TiO2 with Cu-doped CdSe QD supplementation. The mechanism of the recombination and electron transport in the perovskite solar cells becoming the basis of ZnO/TiO2 arrays was investigated to represent the merit of core/shell as an electron transport layer in effective devices.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.66 no.3
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• pp.129-134
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• 2017

We investigated theoretically the quantum optical transition properties of Si, in quasi 2-Dimensinal Landau splitting system, based on quantum transport theory. We apply the quantum transport theory (QTR) to the system in the confinement of electrons by square well confinement potential under linearly polarized oscillating field. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on four transition processes, namely, the intra-leval transition process, the inter-leval transition process, the phonon emission transition process and the phonon absorption transition process.

• Journal of the Optical Society of Korea
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• v.19 no.3
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• pp.272-276
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• 2015

The PbS quantum dot is an emerging photovoltaic material, which may provide high efficiency breakthroughs. The most crucial element for the high efficiency solar cells's development is to understand charge transport characteristics of PbS quantum dot solids, which are also important in planning strategic research. We have investigated charge transport characteristics of PbS quantum dot solids thin films using space charge limited conduction analysis and assessed thickness dependent photovoltaic performances. The extracted carrier drift mobility was $low-10^{-2}cm^2/Vs$ with the estimated diffusion length about 50 nm. These and recently reported values were compared with those from a commercial photovoltaic material, and we present an essential element in further development of PbS quantum dot solids materials.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.457-465
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• 2014

Size-controlled lead sulfide (PbS) quantum dots were synthesized by the typical hot injection method using oleic acid (OA) as the stabilizing agent. Subsequently, the ligand exchange reaction between OA and thioacetic acid (TAA) was employed to obtain TAA-capped PbS quantum dots (PbS-TAA QDs). The condensation reaction of the TAA ligands on the surfaces of the QDs enhanced the conductivity of the PbS-TAA QDs thin films by about 2-4 orders of magnitude, as compared with that of the PbS-OA QDs thin films. The electron transport mechanism of the PbS-TAA QDs thin films was investigated by current-voltage (I-V) measurements at different temperatures in the range of 293 K-473 K. We found that the charge transport was due to sequential tunneling of charge carriers via the QDs, resulting in the thermally activated hopping process of Arrhenius behavior.

• Journal of Magnetics
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• v.16 no.4
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• pp.408-412
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• 2011

We investigated theoretically the magnetic field dependence of the quantum optical transition of qusi 2-Dimensional Landau splitting system, in GaN and ZnO. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). Through the analysis of this work, we found the increasing properties of the optical Quantum Transition Line Shapes(QTLSs) which show the absorption power and the Quantum Transition Line Widths(QTLWs) with the magnetic-field in GaN and ZnO. We also found that QTLW, ${\gamma}(B)_{total}$ of GaN < ${\gamma}(B)_{total}$ of ZnO in the magnetic field region B < 25 Tesla.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.10
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• pp.15-22
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• 2008

The bulk-planer MOSFET has a scaling limitation due to the short channel effect (SCE). The Double-Gate MOSFET (DG-MOSFET) is a next generation device for nanoscale with excellent control of SCE. The quantum effect in lateral direction is important for subthreshold characteristics when the effective channel length of DG-MOSFET is less than 10nm, Also, ballistic transport is setting important. This study shows modeling and design issues of nanoscale DG-MOSFET considering the 2D quantum effect and ballistic transport. We have optimized device characteristics of DG-MOSFET using a proper value of $t_{si}$ underlap and lateral doping gradient.

• Journal of information and communication convergence engineering
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• v.5 no.1
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• pp.45-49
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• 2007

The analytical transport model in subthreshold regime for double gate MOSFET has been presented to analyze the short channel effects such as subthreshold swing, threshold voltage roll-off and drain induced barrier lowering. The present approach includes the quantum tunneling of carriers through the source-drain barrier. Poisson equation is used for modeling thermionic emission current, and Wentzel-Kramers-Brillouin approximations are applied for modeling quantum tunneling current. This model has been used to investigate the subthreshold operations of double gate MOSFET having the gate length of the nanometer range with ultra thin gate oxide and channel thickness under sub-20nm. Compared with results of two dimensional numerical simulations, the results in this study show good agreements with those for subthreshold swing and threshold voltage roll-off. Note the short channel effects degrade due to quantum tunneling, especially in the gate length of below 10nm, and DGMOSFETs have to be very strictly designed in the regime of below 10nm gate length since quantum tunneling becomes the main transport mechanism in the subthreshold region.

• Journal of Adhesion and Interface
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• v.23 no.2
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• pp.17-24
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• 2022

Colloidal quantum dots (QDs) have gained attention for applications in quantum dot light emitting diodes (QLEDs) due to their high photoluminescence quantum yield, narrow emission spectra, and tunable bandgap. Nevertheless, non-radiative recombination induced by electron and hole imbalance deteriorates the device efficiency and stability. To overcome the problem, researchers have been trying to enhance hole transport properties of hole transporting layers (HTL) and/or slow down the electron injection in electron transport layer (ETL). Here, we summarize two approaches: i) development of interfacial materials between QD and ETL (or HTL); ii) engineering of HTL by blending or multi-layer approaches.

• Journal of IKEEE
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• v.22 no.1
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• pp.61-67
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• 2018

We investigated theoretically the magnetic field dependence of the quantum optical transition of qusi 2-Dimensional Landau splitting system, in CdS and ZnO. In this study, we investigate electron confinement by square well confinement potential in magnetic field system using quantum transport theory(QTR). In this study, theoretical formulas for numerical analysis are derived using Liouville equation method and Equilibrium Average Projection Scheme (EAPS). In this study, the absorption power, P (B), and the Quantum Transition Line Widths (QTLWS) of the magnetic field in CdS and ZnO can be deduced from the numerical analysis of the theoretical equations, and the optical quantum transition line shape (QTLS) is found to increase. We also found that QTLW, ${\gamma}(B)_{total}$ of CdS < ${\gamma}(B)_{total}$ of ZnO in the magnetic field region B<25 Tesla.

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.30-30
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• 2009