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2D Quantum Effect Analysis of Nanoscale Double-Gate MOSFET  

Kim, Ji-Hyun (Department of electronic engineering, Ewha Womans University)
Son, Ae-Ri (Department of electronic engineering, Ewha Womans University)
Jeong, Na-Rae (Department of electronic engineering, Ewha Womans University)
Shin, Hyung-Soon (Department of electronic engineering, Ewha Womans University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.45, no.10, 2008 , pp. 15-22 More about this Journal
Abstract
The bulk-planer MOSFET has a scaling limitation due to the short channel effect (SCE). The Double-Gate MOSFET (DG-MOSFET) is a next generation device for nanoscale with excellent control of SCE. The quantum effect in lateral direction is important for subthreshold characteristics when the effective channel length of DG-MOSFET is less than 10nm, Also, ballistic transport is setting important. This study shows modeling and design issues of nanoscale DG-MOSFET considering the 2D quantum effect and ballistic transport. We have optimized device characteristics of DG-MOSFET using a proper value of $t_{si}$ underlap and lateral doping gradient.
Keywords
Double-Gate MOSFET; Quantum effect; ballistric transport; tunneling current;
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