The Transactions of the Korean Institute of Electrical Engineers P (전기학회논문지P)

The Korean Institute of Electrical Engineers (대한전기학회)
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Quantum Transition Properties of Quasi-Two Dimensional Si System in Electron Deformation Potential Phonon Interacting

전자 포텐셜 변형과 포논 상호작용에 의한 준 이차원 Si 구조의 전도 현상 해석

  • Lee, Su-Ho (Dept. of Electrical Engineering, Donga University) ;
  • Kim, Young-Mun (Dept. of Electrical Engineering, Masan University) ;
  • Kim, Hai-Jai (Dept. of Electrical Engineering, Masan University) ;
  • Joo, Seok-Min (Dept. of Electrical Engineering, Masan University)
  • Received : 2017.08.09
  • Accepted : 2017.08.22
  • Published : 2017.09.01
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Abstract

We investigated theoretically the quantum optical transition properties of Si, in quasi 2-Dimensinal Landau splitting system, based on quantum transport theory. We apply the quantum transport theory (QTR) to the system in the confinement of electrons by square well confinement potential under linearly polarized oscillating field. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on four transition processes, namely, the intra-leval transition process, the inter-leval transition process, the phonon emission transition process and the phonon absorption transition process.

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References

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