• Title/Summary/Keyword: quantum phase

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A study on the fabrication of periodically poled Ti:LiNbO3 (PPLN) by the control of charge (전하량제어에 의한 주기적 분극반전 Ti:LiNbO3 (PPLN) 제작 공정에 관한 연구)

  • Kim, Won-Joung;Jung, Hong-Sik;Lee, Han-Young
    • Korean Journal of Optics and Photonics
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    • v.16 no.4
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    • pp.366-375
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    • 2005
  • A fabrication process of periodic electric field assisted poling of Ti-diffused channel waveguides in LiNbO3 (Ti:PPLN) has been developed and improved using a periodic 180o phase inversion along the z-axis. The zig for poling inversion and the Labview program of charge control have been devised. Pulse high voltage and duty cycle were adjusted based on the estimated charge required for poling inversion. Monitoring the change of leakage current under applied voltage less than the coercive voltage also minimized a breakdown.

Entropy and its Relation with the Property of Molecule, Phase and Component (엔트로피와 분자 특성, 상 및 성분의 관계)

  • Jaeeon Chang
    • Korean Chemical Engineering Research
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    • v.61 no.1
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    • pp.116-122
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    • 2023
  • We study the relationship of entropy with the properties of molecules and also with the macroscopic specifications of the system, i.e., component and phase. Understanding different viewpoints of classical mechanics and quantum mechanics for the indistinguishability of molecules belonging to the same component, we discuss a few thermodynamic systems in which the properties of molecules are to be consistent with the component as a macroscopic term of classifying the molecules. With a clear definition of thermodynamic microstate, the drawback of the Boltzmann statistics caused by the distinguishability of molecules is avoided, and the Gibbs paradox of entropy consequently disappears. Corresponding to the characteristics of fluid and solid phases, we investigated the effects of the indistinguishability and the symmetry number of molecules and the number of microstates realized in time on the partition function and the entropy. In particular, we show that crystalline solid can be regarded as a system which does not satisfy the ergodic hypothesis.

The description of wigner function and density matrix by computer tomograph (전산 시늉에 의한 위그너 함수와 밀도 행렬이 기술)

  • 강장원;조기현;윤선현
    • Korean Journal of Optics and Photonics
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    • v.11 no.6
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    • pp.441-446
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    • 2000
  • Wigner functions and density matrices are computer simulated for various quantum mechanical states of light. Wigner function and density matrices are evaluated by filtered back projection which includes inverse Radon transform from the distribution function of the photocurrents, which are calculated in the balanced homodyne detection scheme. The density matrix is also directly obtained by using the pattern function from the simulated phase independent photocurrent distribution function. ction.

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Photocatalytic degradation of MTBE in gas phase (광촉매 반응에 의한 기상 MTBE 분해)

  • Park, Sang-Eun;Joo, Hyun-Ku;Jeong, Hee-Rok;Chun, Myung-Suk;Auh, Chung-Moo;Kang, Joon-Wun
    • Journal of the Korean Solar Energy Society
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    • v.21 no.2
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    • pp.55-67
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    • 2001
  • This study contains the photocatalytic degradation of methyl-tert-butyl ether(MTBE), one of water-contaminating substances, into $CO_2$. Herein was investigated factors, kinetics, and reaction pathways related with MTBE degradation. This works is possible to be applied in the field of environmental remediation such as undergroundwater purification with optimized system configuration in the near future.

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A Fabrication and Characteristics of GaInAs/InP PIN Phtodiode Grown by LPE (LPE에 의한 GaInAs/InP PIN Photodiode의 제작 및 특성)

  • 박찬용;남은수;박경현;김상배;박문수;이용탁;홍창희
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.5
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    • pp.737-746
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    • 1990
  • Ga0.47In0.53As PIN photodiodes(PD) having various areas have been fabricated by liquid phase epitaxial techniques. Ternary melt has been baked out at 675\ulcorner in H2 atmosphere for 20 hours before growth, which resulted in reduction of background carrier concentration of grown epi-layer. Also, lattice mismatch has been controlled within 0.01%. The room temperature performance of 10**-4cm\ulcornerarea PIN PD at a bias voltage of -5V were` quantum efficiency(with no antireflection coating)=60% for 1.3\ulcorner light source, dark current\ulcorner5nA, and capacitance\ulcornerpE. Frequency response measurement of packaged PIN PD has shown that cut-off frequency (f-3dB) was 961MHz. This PD has shown a good eye pattern when it was incorporated in a 565Mbps optical receiver.

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Gas Phase Proton Affinity, Basicity, and pKa Values for Nitrogen Containing Heterocyclic Aromatic Compounds

  • Hwang, Sun-Gu;Jang, Yun-Hee;Chung, Doo-Soo
    • Bulletin of the Korean Chemical Society
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    • v.26 no.4
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    • pp.585-588
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    • 2005
  • Bipyridine and its derivatives have been widely used as the ligands in transition metal complexes. The proton affinities of pyridine derivatives were calculated using an ab initio quantum mechanical method (B3LYP with various double zeta and triple zeta basis sets) in combination with the Poisson-Boltzmann continuum solvation model. Van der Waals radii of the atoms in the heterocyclic rings for the solvation energy calculation were set to values determined to reproduce the $pK_a$ values of guanine and oxoguanine derivatives and that of chlorine was optimized to reproduce the experimental values of relating compounds. The $pK_a$ values for the heterocyclic ring compounds were in agreement with the experimental values with a mean unsigned error of 0.45 $pK_a$ units.

GaN Base Blue LED on Patterned Sapphire Substrate by Wet Etching (습식식각 방법으로 제작한 패턴 형성 사파이어 기판을 가지는 GaN계 청색 LED)

  • Kim, Do-Hyung;Yi, Yong-Gon;Yu, Soon-Jae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.1
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    • pp.7-11
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    • 2011
  • Sapphire substrate was patterned by a selective chemical wet etching technique, and GaN/InGaN structures were grown on this substrate by MOVPE (Metal Organic Vapor Phase Epitaxy). The surface of grown GaN on patterned sapphire substrate (PSS) has good morphology and uniformity. The patterned sapphire substrate LED showed better light output than conventional LED that improvement 50%. We think these results come from enhancement of internal quantum efficiency by decrease of threading dislocation and increase of light extraction efficiency. Also these LED showed more uniform emission distribution in angle than conventional LED.

Coherent Control of Absorption and Polarization Decay in GaAs Quantum Wells : Time and Spectral Domain Studies (GaAs 양자우물에서 흡수와 편광소멸의 결맞는 조절 : 시간과 에너지 영역 연구)

  • 김대식;이대수;이기주;홍성철
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.02a
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    • pp.18-19
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    • 2000
  • Recently, coherent control of exciton populations has been demonstrated through terahertz, reflection, and four-wave-mixing experiments. However, the most direct probe of exciton population control is the absorption, which has been lacking in previous studies. In this report, we probe the time evolution of exciton population directly through a transmission experiment. In particular, using upconversion technique with both narrow (spectrally broad) and long (spectrally narrow) pulses, we can obtain both the temporal and the spectral information. The main thrust of our report is that when phase controlled, the second pulse can be either greatly enhanced or completely destroyed by gaining energy from exciton (thus destroying the exciton population) or giving all of its energy to the system (thus greatly increasing the exciton population), respectively. (omitted)

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TEM Stud of GaN Thick Film Crystals Grown by HVPE

  • 송세안;이성국
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.121-121
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    • 1999
  • Gallium nitride (GaN) semiconductor is intensively under investigation for commercialization of short wavelength light emitting devices and laser diodes. One of serious obstacles to overcome is to reduce the defect density in GaN film grown by various techniques such as MOCVD, HVPE, etc. Many research groups including SAIT are trying to improve the defect density to 106-107/cm2 from the level of 108-1010/cm2. We have investigated epitaxial growth behaviour of GaN thin and thick films under hidride vapour phase epitaxy (HVPE) condition. In this report, we present the microstructural and crystallographical characteristics of the GaN films grown on sapphire (0001) substrate which were studied by both conventional and high-resolution transmission electron microscopy (TEM). Also we present some microscopic analysis results obtained from GaN films grown by ELO(dpitzsial lateral overgrowth)-HVPE and from GaN quantum well structures grown by MOCVD. Another serious problem in growing GaN thick film by HVPE is internal micro-cracks. We also comment the origin of the micro-crack.

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Improved Performance of 1.55 ㎛ InGaAsP/InP Superluminescent Diodes by Tapered Stripe Structure

  • Choi Young-Kyu
    • KIEE International Transactions on Electrophysics and Applications
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    • v.5C no.1
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    • pp.39-43
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    • 2005
  • We proposed a structure for a 1.55 ㎛ strained separate confinement heterostructure (SCH) multi- quantum well (MQW) superluminescent diode (SLD), having a tapered active region. SLD was fabricated through a two-step procedure: the first step being metal organic chemical vapor deposition (MOCVD) and the second-step being liquid phase epitaxy (LPE). We used a 15 laterally tilted stripe and window region to suppress the lasing action of the SLD. The performance of the SLD showed output power of 11 mW with no lasing under 200 mA pulse driving. The full-width at half-maximum was 42 nm at 200 mA, 25℃.