Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 27 Issue 5
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- Pages.737-746
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- 1990
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- 1016-135X(pISSN)
A Fabrication and Characteristics of GaInAs/InP PIN Phtodiode Grown by LPE
LPE에 의한 GaInAs/InP PIN Photodiode의 제작 및 특성
Abstract
Ga0.47In0.53As PIN photodiodes(PD) having various areas have been fabricated by liquid phase epitaxial techniques. Ternary melt has been baked out at 675\ulcorner in H2 atmosphere for 20 hours before growth, which resulted in reduction of background carrier concentration of grown epi-layer. Also, lattice mismatch has been controlled within 0.01%. The room temperature performance of 10**-4cm\ulcornerarea PIN PD at a bias voltage of -5V were` quantum efficiency(with no antireflection coating)=60% for 1.3\ulcorner light source, dark current\ulcorner5nA, and capacitance\ulcornerpE. Frequency response measurement of packaged PIN PD has shown that cut-off frequency (f-3dB) was 961MHz. This PD has shown a good eye pattern when it was incorporated in a 565Mbps optical receiver.
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