• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.10-15
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• 2002

In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1104-1108
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• 2004

A Study has been made of surface modification of various polymers by ion implantation to change the optical transmittance property at ultraviolet ray (UV, $200\sim400nm$). The substrates were PC (Polycarbonate), PET(Polyethyleneteraphtalate) and PP (Polypropylene). The effects of ion implantation on the change of optical transmittance were investigated in relation to ion species, implantation energies and ion fluences. The N, Ar, Kr, Xe ion implantation performed at ion energies from 20 to 50keV. The fluences ranged from $5\times10^{15}$ to $7\times10^{16}ions/cm^2$. UV/Vis transmittance spectroscopy, FT-IR and XPS were used to investigate optical transmittance, chemical structure and surface chemical state of irradiated polymer. Surface color was changed from the yellow to the dark brown and the transmittance of UV ray in the range UV-A($320\sim400nm$) decreased more than 80% after ion implantation.

• Journal of Surface Science and Engineering
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• v.39 no.5
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• pp.235-239
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• 2006

The aluminum nitride(AlN) layer on Al7075 substrate has been formed through nitrogen ion implantation process. The implantation process was performed under the conditions : 100 keV energy, total ion dose up to $2{\times}10^{18}\;ions/cm^2$. XRD analysis showed that aluminum nitride layers were formed by nitrogen implantation. The formation of Aluminum nitride enhanced surface hardness up to 265HK(0.02 N) from 150HK(0.02 N) for the unimplanted specimen. Micro-Knoop hardness test showed that wear resistance was improved about 2 times for nitrogen implanted specimens above $5\;{\times}\;10^{17}\;ions/cm^2$. The friction coefficient was measured by Ball-on-disc type wear tester and was decreased to 1/3 with increasing total nitrogen ion dose up to $1\;{\times}\;10^{18}ions/cm^2$. The enhancement of mechanical properties was observed to be closely associated with AlN formation. AES analysis showed that the maximum concentration of nitrogen increased as ion dose increased until $5\;{\times}\;10^{17}\;ions/cm^2$.

• Transactions on Electrical and Electronic Materials
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• v.9 no.5
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• pp.206-208
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• 2008

Implantation of metals and ceramics with ions of nitrogen and other species has improved surface properties such as friction, wear and corrosion in numerous industrial applications. In recent years, PCB drills tend to be more minimized increasingly as the electronics components have been more highly accumulated and minimized. Therefore nitrogen ion implantation was performed onto PCB drill (0.15 & 0.3 mm in diameter), in order to investigate mechanical properties of WC-Co cermets surface through Nano-indentation tests. PCB drill was implanted at energy of 70 keV, 90 keV, 120 keV and with the dose range of $1{\times}10^{17}$ and $5{\times}10^{17}\;ions/cm^{2}$. After ion implantation, WC-Co PCB drill bits was tested in actual operating situation to apply cutting tools industry and is concluded that the life time of nitrogen ion implanted PCB drills is one and a half times longer than the unimplanted.

• Current Optics and Photonics
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• v.3 no.2
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• pp.172-176
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• 2019

The work reports on the fabrication of an optical planar waveguide in the Nd:CNGG crystal by the 0.4-MeV hydrogen ion implantation with a fluence of $8.0{\times}10^{16}ions/cm^2$. The nuclear energy loss of the implanted hydrogen ions was derived by using SRIM 2013 code. The microscope image of the proton-implanted Nd:CNGG crystal cross section was captured by a metallographic microscope. The transmittance spectra were recorded before and after the ion implantation. The light intensity distribution of the planar waveguide at 632.8 nm was experimentally measured to validate its effect on one dimension confinement. The investigation shows that the proton-implanted Nd:CNGG waveguide is a candidate for an optoelectronic integrated device.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.1-8
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• 2004

The SOI wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by TRIM simulation that 65 keV proton implantation is required for the standard SOI wafer (200 nm SOI, 400 nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the 6∼$9\times10^{16}$ $H^{+}/\textrm{cm}^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. The depth distribution of implanted hydrogen has been experimentally confirmed by ERD and SIMS measurements. The microstructure evolution in the damaged layer was also studied by X-TEM analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1138-1141
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• 2004

고분자 재료에 이온을 주입하면 표면전기저항이 이온주입조건에 따라 $10^{16}\Omega/sq$ 에서 $10^7\Omega/sq$ 까지 변하게 되며, 광학적 특성도 변하게 된다. 이는 산업적으로 대전방지 등에 적용이 가능하며 이러한 신소재 개발을 위하여 산업용 이온빔 표면처리 장치를 제작하고 인출광학을 기초로 이온빔을 제어하여 고분자 재료의 이온주입처리 양산기술을 개발하였다. 본 연구에서는 대면적, 대전류 이온빔 인출을 위한 이온원의 광학적 설계 및 빔라인에서의 솔레노이드 전자석을 이용한 빔프로파일 제어방법을 설명하였다. 사용된 고분자 소재는 PC(PolyCarbonate) 및 PET(PolyEthylene Teraphthalate)이며, 질소이온주입조건은 이온에너지 40-50 keV, 이온주입량 $5\times10^{15}$, $1\times10^{16}$, $7\times10^{16}ions/cm^2$의 조건으로 공정을 수행하였다. 또한 대전방지용 고분자 대량생산을 위한 연속 생산조건과 양산공정조건에 따른 표면전기저항변화를 관찰하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.3
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• pp.216-221
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• 2006

Lifetime control technique by proton implantation has become an useful tool for production of modern power devices. In this work, punch-through type diodes were irradiated with protons for the high speed power diode fabrication. Proton irradiation which was capable of controlling carrier's lifetime locally was carried out at the various energy and dose conditions. Characterization of the device was performed by current-voltage, capacitance-voltage and reverse recovery time measurement. We obtained enhanced reverse recovery time characteristics which was about $45\;\%$ of original device reverse recovery time and about $73\;\%$ of electron irradiated device reverse recovery time. The measurement results showed that proton irradiation technique was able to effectively reduce minority carrier lifetime without degrading the other characteristics.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1947-1949
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• 1999

Carrier lifetime in silicon power devices caused switching delay and excessive power loss at high frequency switching. We studied transient turn-on/turn-off transient characteristics of electron irradiated and proton irradiated silicon pn junction diodes. Both the electron and proton irradiation of power devices have already become a widely used practice to reduce minority carrier lifetime locally[1]. The sample is n+p junction diode, made by ion implantation on a $20\Omega.cm$ p-type wafer. We investigated turn-on/turn-off transient & breakdown voltage characteristics by digital oscilloscope. Our data show that proton irradiated samples show better performance than electron irradiated samples.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.91-96
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• 2005

The silicon-on-insulator (SOI) wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by SRIM simulation that 65keV proton implantation is required for a SOI wafer (200nm SOI, 400nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the $6\~9\times10^{16}\;H^+/cm^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. Direct wafer bonding is performed by joining two wafers together after creating hydrophilic surfaces by a modified RCA cleaning, and IR inspection is followed to ensure a void free bonding. The wafer splitting was accomplished by annealing at the predetermined optimum condition, and high temperature annealing was then performed at $1,100^{\circ}C$ for 60 minutes to stabilize the bonding interface. TEM observation revealed no detectable defect at the SOI structure, and the interface trap charge density at the upper interface of the BOX was measured to be low enough to keep 'thermal' quality.