Browse > Article
http://dx.doi.org/10.4313/TEEM.2002.3.2.010

I-V and C-V measurements or fabricated P+/N junction mode in Antimony doped (111) Silicon  

Jung, Won-Chae (Department of Electronic Engineering, College of Engineering Kyonggi University)
Publication Information
Transactions on Electrical and Electronic Materials / v.3, no.2, 2002 , pp. 10-15 More about this Journal
Abstract
In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.
Keywords
C-V; Proton Implantation; Triangular and Abrupt Junction Model;
Citations & Related Records
연도 인용수 순위
  • Reference
1 B. J. Baliga, 'Power Semiconductor Devices', PWS Publishing Company, p. 82, 1996
2 B. G. Streetman and S. Banerjee, 'Solid State Electronic Devices', Prentice Hall, p. 205, 2000
3 D. A. Neamen, 'Semiconductor Physics & Devices', IRWIN, p. 212, 1997
4 S. M. Sze, 'Modem Semiconductor Device Physics', John Wiley & Sons, p. 183, 1998
5 D. J. Roulston, 'An Introduction to the Physics of Semiconductor Devices', Oxford University Press, p. 62, 1999
6 S. Blight, 'CV Profiling in Semiconductor Characterization', Solid State Tech., p. 175, 1990
7 B. M. Ahn and W. C. Jung, 'A study on I-V characteristics in junction barrier schottky rectifiers according to pn junction structures', J. of KIEEME (in Korean), Vol. 13, No. 1, p. 13, 2000
8 J. P. Biersack and L. G. Haggmark, 'A Monte Carlo computer program for the transport of energetic ions in amorphous Targets', Nucl. Inst. Meth., Vol. 174, No. 2, p. 257, 1980   DOI   ScienceOn
9 H. Ryssel, K. Harberg, K. Hoffman, G. Prinke, R. Dumcke, and A. Sachs, 'Simulation of doping processes', IEEE Trans. Elec., Vol. ED-27, p. 1484, 1980
10 W. C. Jung, 'A study of defect distribution and profiles of MeV implanted phosphorus in silicon', J. of KIEEME(in Korean), Vol. 10, No. 9, p. 881, 1997
11 W. C. Jung, 'A study of concentration profiles in amorphous silicon by phosphorus doping and ion implantation', J. of KIEEME(in Korean), Vol. 12, No. 1, p. 18, 1999