1 |
A. Berthold, B. Jakoby and M.J. Vellekoop, Sensors and Actuators A 68, 410 (1998)
|
2 |
C.G. Van de Walle, Phy. Rev. B 40, 4579 (1994)
|
3 |
A. Ploessel and G. Krauter, Wafer direct bonding: tailoring adhesion between brittle materials, Materials Science & Engineering, R25, 1 (1999)
|
4 |
H. Iwata, M. Takagi, Y. Tokuda, and T. Imura, J. Crystal Growth 210, 94 (2000)
DOI
ScienceOn
|
5 |
S. S. Iyer and A. J. Auberton-Herve, Silicon Wqfer Bonding Technology for VLSI and MEMS Applications, The Institution of Electrical Engineers, 2002
|
6 |
T. W. Simpson, I.V. Mitchell, G. O. Este, and F. R. Shepherd, Nucl. Instr. Meth. B 148, 381 (1999)
DOI
ScienceOn
|
7 |
C. Maleville, B. Aspar, T. Poumeyrol, H. Moriceau, M. Brnel, A. J. Auberton-Herve, and T. Barge, Mat. Sci. & Eng. B 46, 14 (1997)
DOI
ScienceOn
|
8 |
G.D. Arrigo, S. Coffa, and C. Spinella, Sensors and Actuators A 3278, 1 (2002)
|
9 |
J. Wang, Q. Xiao, H. Yu, B. Shao, and A. Liu, Microelectronic Eng. 66, 314 (2003)
DOI
ScienceOn
|
10 |
S. Romani and J. H. Evans, Nucl. Instr. Meth. B 44, 313 (1990).
DOI
ScienceOn
|
11 |
A. Ploessel and G. Krauter, Solid-State Electronics 44, 775 (2000)
DOI
ScienceOn
|
12 |
Next generation Semiconductor Wafer, SOl wafer and its manufacturing method invented by Canon, Eltran, http://www.canon.com/technology/production /index.com
|
13 |
Q.-Y. Tong and U. Goesele, Semiconductor Wafer Bonding-Science & Technology, (John Wiley & Sons, New York, 1999), pp. 1-15
|
14 |
J. Haisma and G.A.C.M. Spierings, Mat. Sci. Eng. R269, 1 (2002)
|
15 |
B. Aspar, M. Brnel, H. Moriceau, C. Maleville, T. Poumeyrol, A.M. Papon, A. Claverie, and G. Benassayag, Microelectronic Engineering 36, 233 (1997)
DOI
ScienceOn
|
16 |
S. Cristoloveanu, Solid State Electronics 45, 1403(2001)
DOI
ScienceOn
|
17 |
J. D. Hunn, S. P. Withrow, C. W. White, R. E. Clausing, L. Heatherly, C. P. Christian, and N. R. Parikh, Nuc1. Instr. Meth. B 99, 602 (1995)
DOI
ScienceOn
|
18 |
C. H. Yun and N. W. Cheung, J. Microelectro- mechanical Systems 9, 474 (2000)
ScienceOn
|
19 |
M. Brnel, Nucl. Instr. Meth. 108, 313 (1996)
DOI
ScienceOn
|