Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1999.07d
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- Pages.1947-1949
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- 1999
Comparison of turn-on/turn-off transient in Electron Irradiated and Proton Irradiated Silicon pn diode
전자와 양성자를 조사한 PN 다이오드의 turn-on/turn-off transient 특성 비교
- Lee, Ho-Sung (Dept. of Electronics Engineering Ajou university) ;
- Lee, Jun-Ho (Dept. of Electronics Engineering Ajou university) ;
- Park, Jun (Dept. of Electronics Engineering Ajou university) ;
- Jo, Jung-Yol (Dept. of Electronics Engineering Ajou university)
- Published : 1999.07.19
Abstract
Carrier lifetime in silicon power devices caused switching delay and excessive power loss at high frequency switching. We studied transient turn-on/turn-off transient characteristics of electron irradiated and proton irradiated silicon pn junction diodes. Both the electron and proton irradiation of power devices have already become a widely used practice to reduce minority carrier lifetime locally[1]. The sample is n+p junction diode, made by ion implantation on a
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