Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Comparison of turn-on/turn-off transient in Electron Irradiated and Proton Irradiated Silicon pn diode

전자와 양성자를 조사한 PN 다이오드의 turn-on/turn-off transient 특성 비교

  • Lee, Ho-Sung (Dept. of Electronics Engineering Ajou university) ;
  • Lee, Jun-Ho (Dept. of Electronics Engineering Ajou university) ;
  • Park, Jun (Dept. of Electronics Engineering Ajou university) ;
  • Jo, Jung-Yol (Dept. of Electronics Engineering Ajou university)
  • 이호성 (아주대학교 전자공학부) ;
  • 이준호 (아주대학교 전자공학부) ;
  • 박준 (아주대학교 전자공학부) ;
  • 조중열 (아주대학교 전자공학부)
  • Published : 1999.07.19
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Abstract

Carrier lifetime in silicon power devices caused switching delay and excessive power loss at high frequency switching. We studied transient turn-on/turn-off transient characteristics of electron irradiated and proton irradiated silicon pn junction diodes. Both the electron and proton irradiation of power devices have already become a widely used practice to reduce minority carrier lifetime locally[1]. The sample is n+p junction diode, made by ion implantation on a $20\Omega.cm$ p-type wafer. We investigated turn-on/turn-off transient & breakdown voltage characteristics by digital oscilloscope. Our data show that proton irradiated samples show better performance than electron irradiated samples.

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