• Journal of IKEEE
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• v.17 no.4
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• pp.428-433
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• 2013

In this study, an 4H-SiC Trench MOS Barrier Schottky (TMBS) rectifier which utilizes the trapezoid mesa structure and the upper half of the trench sidewall is proposed to improve the forward voltage drop and reverse blocking voltage concurrently. The proposed 4H-SiC TMBS rectifier reduces the forward voltage drop by 12% compared to the conventional 4H-SiC TMBS rectifier with the tilted sidewall and improves the reverse blocking voltage by 11% with adjusting the length of the upper sidewall. The Silvaco T-CAD was used to analyze the electrical characteristics.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.7
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• pp.1363-1374
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• 2009

This paper reviews the characteristics and technical trends in Power MOSFET technology that are leading to improvements in power loss for power electronic system. The silicon bipolar power transistor has been displaced by silicon power MOSFET's in low and high voltage system. The power electronic technology requires the marriage of power device technology with MOS-gated device and bipolar analog circuits. The technology challenges involved in combining power handling capability with finger gate, trench array, super junction structure, and SiC transistor are described, together with examples of solutions for telecommunications, motor control, and switch mode power supplies.

• Proceedings of the Korea Water Resources Association Conference
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• 2018.05a
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• pp.150-150
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• 2018

The Numerical Weather Prediction (NWP) models provide information for weather forecasts. The highly nonlinear and complex interactions in the atmosphere are simplified in meteorological models through approximations and parameterization. Therefore, the simplifications may lead to biases and errors in model results. Although the models have improved over time, the biased outputs of these models are still a matter of concern in meteorological and hydrological studies. Thus, bias removal is an essential step prior to using outputs of atmospheric models. The main idea of statistical bias correction methods is to develop a statistical relationship between modeled and observed variables over the same historical period. The Model Output Statistics (MOS) would be desirable to better match the real time forecast data with observation records. Statistical post-processing methods relate model outputs to the observed values at the sites of interest. In this study three methods are used to remove the possible biases of the real-time outputs of the Weather Research and Forecast (WRF) model in Imjin basin (North and South Korea). The post-processing techniques include the Linear Regression (LR), Linear Scaling (LS) and Power Scaling (PS) methods. The MOS techniques used in this study include three main steps: preprocessing of the historical data in training set, development of the equations, and application of the equations for the validation set. The expected results show the accuracy improvement of the real-time forecast data before and after bias correction. The comparison of the different methods will clarify the best method for the purpose of the forecast skill enhancement in a real-time case study.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.523-524
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• 2008

Proposed battery charger is a economic candidate because that is simple and small size. The circuit has linearly operational power stage. That use small size buffer with small driving current and large power MOS gate capacitance. The simulation result show that charging current is stable and has low ripple.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.1
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• pp.10-14
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• 1998

In this paper a double edge triggered (DET) filp-flop is proposed which changes its output state at both the positive and the negative edge transitions of the triggering input. DET filp-flop has advantages in terms of speed and power dissipation over single edge triggered (SET) filp-flop has proposed DET flip-flop needs only 12 MOS transistors and can operate at clock speed of 500 MHz. Also, the power dissipation has decreased about 33% in comparison to SET flip-flop.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.24-26
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• 1998

A new high frequency switching drive method using IGBT is proposed for non-magnetic induction heating system. Using this method, the switching and conduction losses of the switching devices can be reduced. In addition, since IGBT cosl is lower than MOS-FET one, the system cosl can be remarkably pared down. The prototype induction heating system with 1.2㎾ power consumption is builted and tested to verify the operation of the proposed high frequency switching drive method.

• Journal of Magnetics
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• v.7 no.3
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• pp.101-105
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• 2002

MRAM (Magnetoresistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. This paper is for testing the actual electrical parameters to adopt MRAM technology in the semiconductor based memory device. The discussed topics are an actual integration of MRAM core cell and its properties such as electrical tuning of MOS/MTJ for data sensing and control of magnetic switching for data writing. It will be also tested that limits of the MRAM technology for a high density memory.

• 전기의세계
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• v.27 no.4
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• pp.45-51
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• 1978

A new method of realizing the field effect transistor with a sub-.mu. channel width is described. The sub-.mu. channel width is made possible by etching grooves into n$^{+}$ pn$^{[-10]}$ n$^{[-10]}$ structure and using p region at the wall for the channel region of the Metal-Oxide-Semiconductor transistor (MOST), or by diffusing two different types of impurities through the same diffusion mask and using p region at the surface for the channel region of MOST. When the drain voltage is increased at the pn$^{[-10]}$ drainjunction the depletion layer extends into the n$^{[-10]}$ region instead of into p region; this is also the secret of success to realize the sub-.mu. channel width. As the result of the experimental fabrication, a microwave MOST was obtained. The cut-off frequency was calculated to be 15.4 GHz by Linvill's power equation using the measured capacitances and transconductance.

• Proceedings of the IEEK Conference
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• 2009.05a
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• pp.159-162
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• 2009

The necessity of radiation dosimeter with precise measurement of radiation dose is increased and required in the field of spacecraft, radiotheraphy hospital, atomic plant facility, etc. where radiation exists. Until now, a low power commercial metal-oxide semiconductor(MOS) transistor has been tested as a gamma radiation dosimeter. The measurement error between the actual value and the measurement one can occur since the MOSFET(MOS field-effect transistor) dosimeter, which is now being used, has two gates with same width. The measurement value of dosimeter depends on the variation of threshold voltage, which can be affected by the environment such as temperature. In this paper, a radiation dosimeter having a pair of MOSFET is designed in the same silicon substrate, in which each of the MOSFETs is operable in a bias mode and a test mode. It can measure the radiation dose by the difference between the threshold voltages regardless of the variation of temperature.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.197-204
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• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.