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http://dx.doi.org/10.7471/ikeee.2013.17.4.428

A 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier using the trapezoid mesa and the upper half of sidewall  

Kim, Byung-Soo (Dept. of Electronic Engineering, Sogang University)
Kim, Kwang-Soo (Dept. of Electronic Engineering, Sogang University)
Publication Information
Journal of IKEEE / v.17, no.4, 2013 , pp. 428-433 More about this Journal
Abstract
In this study, an 4H-SiC Trench MOS Barrier Schottky (TMBS) rectifier which utilizes the trapezoid mesa structure and the upper half of the trench sidewall is proposed to improve the forward voltage drop and reverse blocking voltage concurrently. The proposed 4H-SiC TMBS rectifier reduces the forward voltage drop by 12% compared to the conventional 4H-SiC TMBS rectifier with the tilted sidewall and improves the reverse blocking voltage by 11% with adjusting the length of the upper sidewall. The Silvaco T-CAD was used to analyze the electrical characteristics.
Keywords
Silicon Carbide; 4H-SiC; TMBS; Schottky rectifier; Power device;
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Times Cited By KSCI : 1  (Citation Analysis)
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