• Journal of the Korean Ceramic Society
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• v.23 no.5
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• pp.47-54
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• 1986

The structures of crystalline vitreous and liquid $SiO_2$ were Monte carlo simulated employing the potential energy function comprising Lennard-Jones 2-body and Axilrod-Teller 3-body potentials. Although the Si-O-Si angular distribution functions obtained in the simulation appear to be higher than the experimental results the other simulation results including SiO, O-O and Si-Si radial distribution functions and O-Si-O anglular distribution functions agree well with experimental data within acceptable limits. Themost important outcome in this study is that various $SiO_2$forms were successfully reproduced with the same potential energy function.

• Journal of Ecology and Environment
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• v.48 no.1
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• pp.96-109
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• 2024

Background: Khyber Pakhtunkhwa government initiated the Billion Tree Tsunami Afforestation Project including regeneration and afforestation approaches. An effort was made to assess the distribution characteristics of afforested species under present and future climatic scenarios using ecological niche modelling. For sustainable forest management, landscape ecology can play a significant role. A significant change in the potential distribution of tree species is expected globally with changing climate. Ecological niche modeling provides the valuable information about the current and future distribution of species that can play crucial role in deciding the potential sites for afforestation which can be used by government institutes for afforestation programs. In this context, the potential distribution of 8 tree species, Cedrus deodara, Dalbergia sissoo, Juglans regia, Pinus wallichiana, Eucalyptus camaldulensis, Senegalia modesta, Populus ciliata, and Vachellia nilotica was modeled. Results: Maxent species distribution model was used to predict current and future distribution of tree species using bioclimatic variables along with soil type and elevation. Future climate scenarios, shared socio-economic pathways (SSP)2-4.5 and SSP5-8.5 were considered for the years 2041-2060 and 2081-2100. The model predicted high risk of decreasing potential distribution under SSP2-4.5 and SSP5-8.5 climate change scenarios for years 2041-2060 and 2081-2100, respectively. Recent afforestation conservation sites of these 8 tree species do not fall within their predicted potential habitat for SSP2-4.5 and SSP5-8.5 climate scenarios. Conclusions: Each tree species responded independently in terms of its potential habitat to future climatic conditions. Cedrus deodara and P. ciliata are predicted to migrate to higher altitude towards north in present and future climate scenarios. Habitat of D. sissoo, P. wallichiana, J. regia, and V. nilotica is practiced to be declined in future climate scenarios. Eucalyptus camaldulensis is expected to be expanded its suitability area in future with eastward shift. Senegalia modesta habitat increased in the middle of the century but decreased afterwards in later half of the century. The changing and shifting forests create challenges for sustainable landscapes. Therefore, the study is an attempt to provide management tools for monitoring the climate change-driven shifting of forest landscapes.

• Journal of Ecology and Environment
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• v.38 no.4
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• pp.529-536
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• 2015

This study was performed to provide important basic data for the preservation and management of Scopura laminata, a species endemic to Korea, by elucidating the spatial characteristics of its present, potential, and future distribution areas. Currently, this species is found in the Odaesan National Park area of South Korea and has been known to be restricted in its habitat due to its poor mobility, as even fully grown insects do not have wings. Utilizing the MaxEnt model, 20 collection points around Odaesan National Park were assessed to analyze and predict spatial distribution characteristics. The precision of the MaxEnt model was excellent, with an AUC value of 0.833. Variables affecting the potential distribution area of S. laminata by more than 10% included the range of annual temperature, seasonality of precipitation, and precipitation of the driest quarter, in order of greatest to least impact. Compared to the current potential distribution area, no significant difference in the overall habitable area was predicted for the 2050s or 2070s. It was, however, demonstrated that the potential habitable area would be reduced in the 2050s by up to 270.3 km from the current area of 403.9 km; further, no potential habitable area was anticipated by the 2070s according to our predictive model. Taken together, it is anticipated that this endemic species could be significantly affected by climate changes, and hence effective countermeasures are strongly warranted for the preservation of habitats and species management.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.4
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• pp.217-222
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• 2003

A new two-dimensional analytical model for the potential distribution and drain-induced barrier lowering (DIBL) effect of fully depleted short-channel Silicon-on-insulator (SOI)-MESFET's has been presented in this paper. The two dimensional potential distribution functions in the active layer of the device is approximated as a simple parabolic function and the two-dimensional Poisson's equation has been solved with suitable boundary conditions to obtain the bottom potential at the Si/oxide layer interface. It is observed that for the SOI-MESFET's, as the gate-length is decreased below a certain limit, the bottom potential is increased and thus the channel barrier between the drain and source is reduced. The similar effect may also be observed by increasing the drain-source voltage if the device is operated in the near threshold or sub-threshold region. This is an electrostatic effect known as the drain-induced barrier lowering (DIBL) in the short-gate SOI-MESFET's. The model has been verified by comparing the results with that of the simulated one obtained by solving the 2-D Poisson's equation numerically by using the pde toolbox of the widely used software MATLAB.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.173-181
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• 2005

A new two dimensional (2-D) model for the potential distribution of fully depleted short-channel ion-implanted silicon MESFET's has been presented in this paper. The solution of the 2-D Poisson's equation has been considered as the superposition of the solutions of 1-D Poisson's equation in the lateral direction and the 2-D homogeneous Laplace equation with suitable boundary conditions. The minimum bottom potential at the interface of the depletion region due to the metal-semiconductor junction at the Schottky gate and depletion region due to the substrate-channel junction has been used to investigate the drain-induced barrier lowering (DIBL) and its effects on the threshold voltage of the device. Numerical results have been presented for the potential distribution and threshold voltage for different parameters such as the channel length, drain-source voltage, and implanted-dose and silicon film thickness.

• 한국연소학회:학술대회논문집
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• 2006.10a
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• pp.145-150
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• 2006

At the furnace top, the distribution of charging coke and ore is adjusted to control the reducing gas flow distribution in the furnace. It is necessary to predict operation condition of blast furnace according to the burden profile to judge whether charging is properly conducted In this study, We propose the model for predicting while layer structures whithin furnace when top burden profile was given. Layer structure of coke and ore could be predicted by top burden profile and solid velocity. Solid velocity is assumed as potential flow. Potential function distribution and timeline are also calculated using solid velocity field. The Calculation is conducted for different burden profile cases. As the result burden distribution and grid structure, which is deformed to match the layer structure in shaft and deadman profile. Gas flow was calculated using this grid, and calculated results are compared with each other.

• Transactions of Materials Processing
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• v.13 no.3
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• pp.279-284
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• 2004

Electroforming is the highly specialized use of electrodeposition for the manufacture of metal parts and basically a specialized form of electroplating. So, we can apply electrochemical system analysis for electroforming process. Electrochemical systems are concerned with the interplay between electricity and chemistry, namely the measurements of electrical quantities, such as current density, potential, and charge, and their relationship to chemical parameters. This paper based on the basic equations of electrics and electrochemical kinetics, was employed for a theoretical explanation of the current density distribution on electroforming process. We calculated current density distribution and potential distribution on cathode. Also, calculated current density distribution of vertical direction. It was shown that current density is related with distance of between anode and cathode and mass transfer process.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2005.05a
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• pp.222-227
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• 2005

This paper presents study on the electric potential distribution when have a short in skeet lamp. In order to measure electric potential testing ground is built in. A experiment is conducted to simulate dry and submerged situation of street lamp. The street lamp is leaked by artificial means. And electric potential is measured in grounded street lamp and street lamp alone. The results show that touch voltage of grounded street lamp is possible to more high than street lamp alone. And the electric shock hazard is high because high electric potential is distributed near submerged street lamp. Also if street lamp is submerged ground is not useful to decrease electric shock hazard.

• Journal of Korean Society on Water Environment
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• v.36 no.3
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• pp.185-193
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• 2020

Bimodal flocculation describes the aggregation and breakage processes of the flocculi (or primary particles) and the flocs in the water environment. Bimodal flocculation causes bimodal size distribution with the two separate peaks of the flocculi and the flocs. Extracellular polymeric substances and ionic species common in the water environment increase the occurrence of bimodal flocculation and flocculi-floc size distribution, under the flocculation mechanisms of electrostatic attraction and polymeric bridging. This study investigated bimodal flocculation and flocculi-floc size distribution, with respect to the extracellular polymeric substance concentration and ionic strength in the kaolinite-containing suspension. The batch flocculation tests comprising 0.12 g/L of kaolinite showed that the highest flocculation potential occurred at the lowest xanthan gum (as extracellular polymeric substances) concentration, under all the ionic strengths of 0.001, 0.01, and 0.1 M NaCl. Also, it was important to note that the higher ionic strength resulted in the higher flocculation potential, at all the xanthan gum concentrations. The bimodal flocculation and flocculi-floc size distribution became apparent in the experimental conditions, which had low and intermediate flocculation potential. Besides the polymeric bridging flocculation, steric stabilization increased the flocculi mass fraction against the floc mass fraction, thereby developing the bimodal size distribution.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.579-584
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• 2012

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping concentration.