1 |
J. D. Marshal, and J. D. Meindl, ' An analytical two-dimensional model for silicon MESFET's,' IEEE Trans. Electron Devices, vol.35, no.3, pp.373-383, 1988
DOI
ScienceOn
|
2 |
K.K. Young, 'Short-channel effect in fully depleted SOl MOSFET's,' IEEE Trans. Electron. Devices, vol.36, no.2, 1989
DOI
ScienceOn
|
3 |
T.Toyabe and S. Asai, 'Analytical models of threshold voltage and breakdown voltage of short-channel MOSFET's derived from two-dimensional analysis,' IEEE J. Solid-State Circuits, vol. SC-14, pp.375-383, 1979
DOI
ScienceOn
|
4 |
T.K. Chiang, Y.H. Wang, and M.P.Houng, 'Modeling of threshold voltage and subthreshold swing of short-channel SOl MESFET's,' Solid State Electron., vol.43, pp.123-l29,1999
DOI
ScienceOn
|
5 |
Chin-Shan Hou, and Ching-Yuan Wu, '2-D analytic model for the threshold-voltage of fully depleted short gate-length Si-SOI MESFET's,' IEEE Trans. Electron Devices, vol.42, no.12, pp.2156-2161, 1995
DOI
ScienceOn
|
6 |
H. Vogt, G. Burbach, J. Belz, and G. Zimmer, 'MESFET's in thin silicon on SIMOX,' Electron Lett., vol.25, no. 23, pp.1580-1581, 1989
|