• 한국재료학회지
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• 제16권2호
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• pp.75-79
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• 2006

The effect of ozone and/or ultrasound treatments on the efficiency of slurry removal in post sliced cleaning (PSC) of silicon ingot was studied. Efficiency of slurry removal was evaluated as functions of time, temperature and surfactant with DOE (Design of Experiment) method. Residual slurries were observed on the wafer surface in case of cleaning by ozone or ultrasound separately. However, a clean wafer surface was appeared when cleaned with ozone and ultrasound simultaneously. It has found that cleaning time was the main effect among temperature, time and surfactant. Elevated temperature, addition of surfactant and high ozone concentration helped to accelerate efficient removal of slurry. The improvement of removal efficiency seems to be related to the formation of more active OH radicals. The highly cleaned surface was achieved at 10 wt% ozone, 1 min and 10 vol% surfactant with ultrasound. Application of ozone and ultrasound might be a useful method for PSC process in wafer cleaning.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.438-438
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• 2009

We have investigated the effect of forming gas annealing for Upgraded Metallurgical Grade (UMG)-silicon solar cell in order to obtain low-cost high-efficiency cell using post deposition anneal at a relatively low temperature. We have observed that high concentration hydrogenation effectively passivated the defects and improved the minority carrier lifetime, series resistance and conversion efficiency. It can be attributed to significantly improved hydrogen-passivation in high concentration hydrogen process. This improvement can be explained by the enhanced passivation of silicon solar cell with antireflection layer due to hydrogen re-incorporation. The results of this experiment represent a promising guideline for improving the high-efficiency solar cells by introducing an easy and low cost process of post hydrogenation in optimized condition.

• 한국진공학회지
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• 제11권4호
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• pp.225-229
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• 2002

LPCVD로 $560^{\circ}C$와 $650^{\circ}C$ 온도에서 실리콘 박막을 제작하였다. 온도에 따른 천이온도를 살펴보았으며, 비정질로 제작된 실리콘 박막을 $900^{\circ}C$와 $1100^{\circ}C$에서 열처리하였다. 제작된 박막에 대해서 XRD, SEM, ellipsometer, $Tektak^3$, Tencer FLX-2320등 그 외 장비를 사용하여, 박막의 결정 방향, 표면 거칠기, 활성화 에너지, 잔류 응력 등을 조사하였다. 본 실험을 통해 $560^{\circ}C$에서 비정질로 증착시키고 $900^{\circ}C$ -$1100^{\circ}C$ 열처리 통해 얻은 다결정실리콘 박막은 처음부터 다결정으로 제작한 박막에 비해 낮은 잔류 응력과 표면 거칠기를 보였다.

• 한국전기전자재료학회논문지
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• 제37권4호
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• pp.439-444
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• 2024

This study investigates the post-thermal treatment effects on the efficiency of silicon heterojunction solar cells, specifically examining the influence of annealing on p-type microcrystalline silicon oxide and ITO thin films. By assessing changes in carrier concentration, mobility, resistivity, transmittance, and optical bandgap, we identified conditions that optimize these properties. Results reveal that appropriate annealing significantly enhances the fill factor and current density, leading to a notable improvement in overall solar cell efficiency. This research advances our understanding of thermal processing in silicon-based photovoltaics and provides valuable insights into the optimization of production techniques to maximize the performance of solar cells.

• Biotechnology and Bioprocess Engineering:BBE
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• 제10권3호
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• pp.212-217
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• 2005

Desorption/ionization on silicon mass spectrometry (DIOS-MS) is a relatively new laser desorption/ionization technique for mass spectrometry without employing an organic matrix. This present study was carried to survey the experimental factors to improve the efficiency of DIOS-MS through electrochemical etching condition in structure and morphological properties of the porous silicon. The porous structure of silicon structure and its properties are crucial for the better performance of DIOS-MS and they can be controlled by the suitable selection of electrochemical conditions. The fabrication of porous silicon and ion signals on DIOS-MS were examined as a function of silicon orientation, etching time, etchant, current flux, irradiation, pore size, and pore depth. We have also examined the effect of pre- and post-etching conditions for their effect on DIOS-MS. Finally, we could optimize the electrochemical conditions for the efficient performance of DIOS-MS in the analysis of small molecule such as amino acid, drug and peptides without any unknown noise or fragmentation.

• Journal of Information Display
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• 제11권3호
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• pp.109-112
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• 2010

The solid phase compositions and dielectric properties of silicon nitride ($SiN_x$) films prepared using the plasma enhanced chemical vapor deposition (PECVD) technique at a low temperature ($200^{\circ}C$) were studied. Controlling the source gas mixing ratio, R = $[N_2]/[SiH_4]$, and the plasma power successfully produced both silicon-rich and nitrogen-rich compositions in the final films. The composition parameter, X, varied from 0.83 to 1.62. Depending on the film composition, the dielectric properties of the $SiN_x$ films also varied substantially. Silicon-rich silicon nitride (SRSN) films were obtained at a low plasma power and a low R. The photoluminescence (PL) spectra of these films revealed the existence of nano-sized silicon particles even in the absence of a post-annealing process. Nitrogen-rich silicon nitride (NRSN) films were obtained at a high plasma power and a high R. These films showed a fairly high dielectric constant ($\kappa$ = 7.1) and a suppressed hysteresis window in their capacitance-voltage (C-V) characteristics.

• 대한금속재료학회지
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• 제49권9호
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• pp.732-738
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• 2011

Silicon oxide thin films were deposited by using a plasma-enhanced chemical-vapor deposition technique to investigate the light emission properties. The photoluminescence characteristics were divided into two categories along the relative ratio of the flow rates of $SiH_4$ and $N_2O$ source gases, which show light emission in the broad/visible range and a light emission peak at 380 nm. We attribute the broad/visible light emission and the light emission peak to the quantum confinement effect of nanocrystalline silicon and the Si=O defects, respectively. Changes in the photoluminescence spectra were observed after the post-annealing processes. The photoluminescence spectra of the broad light emission in the visible range shifted to the long wavelength and were saturated above an annealing temperature of $900^{\circ}C$ or after 1 hour annealing at $970^{\circ}C$. However, the position of the light emission peak at 380 nm did not change at all after the post-annealing processes. The light emission intensities at 380 nm initially increased, and decreased at annealing temperatures above $700^{\circ}C$ or after 1 hour annealing at $700^{\circ}C$. The photoluminescence behaviors after the annealing processes can be explained bythe size change of the nanocrystalline silicon and the density change of Si=O defect in the films, respectively. These results support the possibility of using a silicon-based light source for Si-optoelectronic integrated circuits and/or display devices.

• 대한전자공학회논문지SD
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• 제47권5호
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• pp.48-55
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• 2010

반도체 설계기술의 발달로 구현 회로가 복잡해지고, 동작속도가 크게 증가함에 따라, 반도체 이후 (post-silicon) 설계 단계에서 repair를 위한 기간 및 비용이 크게 증가하고 있다. 본 논문에서는 예비 셀을 이용한 repair 방법을 통해 설계 오류로 인한 repair시 혹은 설계 변경 시에 전체 재설계를 최소화하는 방법을 제안하였다. 또한 예비 셀을 이용한 설계 변경 과정에서 repair layer에 설계 변경을 국한하여 mask 비용과 time-to-market을 줄이는 방법을 개발하였다. 또한 회로 분할을 통해 repair 과정에서 사용하는 예비회로의 비용을 줄일 수 있도록 한다.

• 한국세라믹학회지
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• 제43권8호
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• pp.472-478
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• 2006

The effect of compositional and processing variables on a nitriding reaction of silicon powder compact and subsequent post sintering of RBSN (Reaction-Bonded Silicon Nitride) was investigated. The addition of a nitriding agent enhanced nitridation rate substantially at low temperatures, while the formation of a liquid phase between the nitriding agent and the sintering additives at a high temperature caused a negative catalyst effect resulting in a decreased nitridation rate. A liquid phase formed by solely an additive, however, was found to have no effect on nitridation for the additive amount used in this research. The original site of a decomposing pore former was loosely filled by a reaction product ($Si_3N_4$), which provided a specimen with nitriding gas passage. For SRBSN (Sintered RBSN) specimens of high porosity, only a marginal dimensional change was measured after post sintering. Its engineering implication for near-net shaping ability is discussed.

• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.255-260
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• 1998

Behavior of solid phase crystallizations (SPC) of RF sputtered and LPCVD amorphous hydrogenated silicon film were investigated. LPCVD films showed the higher degree of crystallinity and larger grain size than sputtered films. The applicable degree of crystallinity was also obtained from sputtered films. The deposition method of amorphous silicon film influenced the behavior of post annealing SPC. Observed degree of crystallinity of sputtered films strongly depended on the partial pressure of hydrogen in deposition. The higher deposition temperature of sputtering provided the better crystallinity after SPC. Due to the high degree of poly-crystallinity, the retardation of larger grain growth was observed on sputtering film.