Korean Journal of Metals and Materials (대한금속재료학회지)

The Korean Institute of Metals and Materials (대한금속재료학회)
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Optical Properties of Silicon Oxide (SiOx, x<2) Thin Films Deposited by PECVD Technique

PECVD 방법으로 증착한 SiOx(x<2) 박막의 광학적 특성 규명

  • Kim, Youngill (Department of Nano Science and Technology, University of Seoul) ;
  • Park, Byoung Youl (Department of Nano Science and Technology, University of Seoul) ;
  • Kim, Eunkyeom (Department of Nano Engineering, University of Seoul) ;
  • Han, Munsup (Department of Physics, University of Seoul) ;
  • Sok, Junghyun (Department of Nano Science and Technology, University of Seoul) ;
  • Park, Kyoungwan (Department of Nano Science and Technology, University of Seoul)
  • 김영일 (서울시립대학교 나노과학기술학과) ;
  • 박병열 (서울시립대학교 나노과학기술학과) ;
  • 김은겸 (서울시립대학교 나노공학과) ;
  • 한문섭 (서울시립대학교 물리학과) ;
  • 석중현 (서울시립대학교 나노과학기술학과) ;
  • 박경완 (서울시립대학교 나노과학기술학과)
  • Received : 2011.03.23
  • Published : 2011.09.25
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Abstract

Silicon oxide thin films were deposited by using a plasma-enhanced chemical-vapor deposition technique to investigate the light emission properties. The photoluminescence characteristics were divided into two categories along the relative ratio of the flow rates of $SiH_4$ and $N_2O$ source gases, which show light emission in the broad/visible range and a light emission peak at 380 nm. We attribute the broad/visible light emission and the light emission peak to the quantum confinement effect of nanocrystalline silicon and the Si=O defects, respectively. Changes in the photoluminescence spectra were observed after the post-annealing processes. The photoluminescence spectra of the broad light emission in the visible range shifted to the long wavelength and were saturated above an annealing temperature of $900^{\circ}C$ or after 1 hour annealing at $970^{\circ}C$. However, the position of the light emission peak at 380 nm did not change at all after the post-annealing processes. The light emission intensities at 380 nm initially increased, and decreased at annealing temperatures above $700^{\circ}C$ or after 1 hour annealing at $700^{\circ}C$. The photoluminescence behaviors after the annealing processes can be explained bythe size change of the nanocrystalline silicon and the density change of Si=O defect in the films, respectively. These results support the possibility of using a silicon-based light source for Si-optoelectronic integrated circuits and/or display devices.

Keywords

Acknowledgement

Supported by : 한국연구재단

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