• Title/Summary/Keyword: post annealing

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Growth of La0.35Pr0.35Ca0.3MnO3/LaAlO3 Thin Film using Laser Molecular-Beam Epitaxy and its Magnetic Properties (Laser Molecular-Beam Epitaxy를 이용한 La0.35Pr0.35Ca0.3MnO3/LaAlO3 초격자 박막의 합성과 그 자기적 특성의 연구)

  • Seung, S.K.;Song, J.H.
    • Journal of the Korean Magnetics Society
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    • v.21 no.3
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    • pp.93-98
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    • 2011
  • We successfully grew $La_{0.35}Pr_{0.35}Ca_{0.3}MnO_3$(LPCMO)/$LaAlO_3$(LAO) thin film using Laser Molecular-Beam Epitaxy and studied post-growth annealing effects ($750^{\circ}C$, 5 h) on its crystal structural and magnetic properties. Whereas the single-layered LPCMO and LPCMO/STO superlattice thin films show rough surface before and after the post-growth annealing, LPCMO/LAO superlattice shows a relatively very flat surface even after the post-growth annealing. The enhancement of ferromagnetism of LPCMO/LAO superlattice after the post-growth annealing was remarkable compared to the single-layered LPCMO thin film. The coercive and saturation magnetic field of the single-layed LPCMO thin film were decreased after the post-annealing. However, for LPCMO/LAO superlattice, a same coercive and increased saturation magnetic field were exhibited after post-growth annealing. We suggest that these peculiar observations are originate from the super-structure of LPCMO and LAO.

The Effects of Post-Treatments for Wet Spun PVDF on the Piezoelectric Property (습식방사 된 PVDF 섬유의 후 처리를 통한 결정구조의 변화)

  • Yu, Seung Mi;Oh, Hyun Ju;Hwang, Sang-Kyun;Chung, Yong Sik;Hwang, Hui Yun;Kim, Seong Su
    • Composites Research
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    • v.26 no.2
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    • pp.123-128
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    • 2013
  • The PVDF (polyvinylidene fluoride) fibers were prepared using the wet spinning processing. To improve ${\beta}$-phase crystalline which closely related piezoelectric property PVDF wet spun fibers conducted post treatment. Post treatment is consisted of heat stretching and annealing process. The heat stretching and annealing conditions were controlled by changing temperature between glass transition temperature and melting temperature. From these experimental data, the resulting crystal structure of the ${\beta}$-phase crystalline was confirmed by FT-IR and XRD experiments. From these analysis results, optimum stretching and annealing conditions of the wet spun PVDF fibers were founded to increase high ${\beta}$-phase crystalline. Furthermore results showed that thermal processing had a direct effect on modifying the crystalline microstructure and also confirmed that heat stretching and annealing could increase the degree of crystallinity and ${\beta}$-phase crystalline. Finally, piezoelectric constant ($d_{11}$) of the post heat treated PVDF fibers reinforced composite were measured to investigate the feasibility for the sensing materials.

Effect of Solvent Annealing on the Characteristics of PEDOT:PSS as a Ammonia Gas Sensor Film (용매열처리에 따른 PEDOT:PSS 암모니아 가스 감지막 특성 변화)

  • Noh, Wang Gyu;Yeom, Se-Hyuk;Lee, Wanghoon;Shin, Han Jae;Kye, Ji Won;Kwak, Giseop;Kim, Se Hyun;Ryu, Si Ok;Han, Dong Cheul
    • Journal of Sensor Science and Technology
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    • v.26 no.2
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    • pp.96-100
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    • 2017
  • Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has been extensively studied as the active material in ammonia gas sensor because of its fast response time, high conductivity and environmental stability. It is well known that a post annealing process for organic devices based on PEDOT:PSS significantly increases the device performance. In this study, we propose the solvent annealing of PEDOT:PSS and investigated its effects. As a results, post solvent annealing on PEDOT:PSS lead to the surface chemical and physical properties change. These changes result in improved conductivity of the PEDOT:PSS. In additional, ammonia sensitivity of solvent annealed PEDOT:PSS become higher than pristine polymer film. The enhancement is mainly caused by the depletion of gas barrier PSS and structural re-forming PEDOT networks. We believe that the post solvent annealing is a promising method to achieve highly sensitivity PEDOT:PSS films for applications in efficient, low-cost and flexible ammonia gas sensor.

Low Temperature Processing of $SrBi_2Ta_2O_9$ Thin Films

  • Choelhwyi Bae;Lee, Jeon-Kook;Park, Dongkyun;Jung, Hyung-Jin
    • The Korean Journal of Ceramics
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    • v.6 no.2
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    • pp.110-115
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    • 2000
  • $SrBi_2Ta_2O_9$ thin films were deposited at room temperature on the usual (111) oriented Pt bottom electrodes using r.f. magnetron sputtering, and then post-annealed at 650-$800^{\circ}C$ for 30min in oxygen flow. Low temperature processing which shows the preferred oriented SBT thin films was obtained by controlling the sputtering pressure and/or Sr content in target. The orientation and grain growth behavior of SBT thin films were dependent on Sr contents in films. With increasing the excess Bi content up to 50% in SBT thin films, it was possible to lower the onset temperature of grain growth. The c-axis preferred oriented SBT thin films were well-grown under the condition of low post-annealing($650^{\circ}C$) by lowering post-annealing pressure. After $10^{11}$ switching cycles, no polarization degradation was observed in both preferred oriented SBT capacitors.

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Investigation of Post Annealing Effect on the PZT Thin Films

  • Choi, Sujin;Park, Juyun;Koh, Sung-Wi;Kang, Yong-Cheol
    • Journal of Integrative Natural Science
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    • v.8 no.4
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    • pp.244-249
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    • 2015
  • The PZT thin films were deposited on Si(100) substrate using RF magnetron sputtering method. And the PZT thin films were post annealed at various temperatures to form perovskite phase. To analyze PZT thin films, surface profiler, XRD, XPS, CA, and SFE were used. The thickness increased from 536.5 to 833.2 nm as post annealing temperature increased. The perovskite PZT was observed from PZT-823 and pyrochlore PZT, $ZrO_2$, $TiO_2$, and perovskite $PbZrO_3$ were observed. From the XPS, the atomic percentages of Pb, Zr, Ti, and O were calculated and the portion of Pb increased to PZT-823 and decreased to PZT-923 and then increased to PZT-1023. Also, the CA and SFE was effected on post annealing temperature and as a function of atomic percentage of Pb, the CA and SFE was transformed.

Effects of Oxygen Partial Pressure and Post-Annealing Temperature on Structure of ZnO Thin Film Prepared by Pulsed Laser Deposition (PLD를 이용한 ZnO 박막의 구조에 산소 분압 및 후열처리 온도가 미치는 영향)

  • Cho, Dae-Hyung;Kim, Ji-Hong;Koo, Sang-Mo;Moon, Byung-Moo
    • Proceedings of the KIEE Conference
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    • 2007.11a
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    • pp.88-89
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    • 2007
  • ZnO thin films were deposited on $Al_2O_3$ (alumina) substrates by pulsed laser deposition (PLD) using Nd:YAG laser with a wavelength of 355nm, at room temperature and oxygen partial pressure of 1, 10, 30, 50, 100, and 200m Torr. Furthermore, deposited ZnO thin films were post-annealed at 400, 550, $600^{\circ}C$. The effects of oxygen partial pressure and post-annealing temperature on structural properties of the deposited films have been investigated by means of X-ray diffraction (XRD), and atomic force microscope (AFM), respectively. It has been found that ZnO thin films exhibit c-axis orientation, exhibiting an increased foil width at half maximum (FWHM) value of (002) diffraction peak at 30m Torr oxygen partial pressure and higher post-annealing temperature ($700^{\circ}C$).

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The electrical properties of SBT thin films according to various post-annealing of Pt bottom electrode (Pt 하부전극 후열처리 온도에 따른 SBT 박막의 전기적 특성평가)

  • Cha, Won-Hyo;Yoon, Ji-Eon;Lee, Chul-Su;Hwang, Dong-Hyun;Son, Young-Gook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.202-203
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    • 2007
  • Ferroelectric SBT($SrBi_2Ta_2O_9$) thin films were deposited on Pt/Ti/$SiO_2$/Si substrate using R.F. magnetron sputtering method. The ferroelectric and electric characteristics were investigated with various post-annealing of Pt at $200{\sim}600^{\circ}C$. Compared with SBT thin film which had not post-annealed, the electrical properties and crystallizations of the SBT thin films were relatively improved by the post-annealing of Pt bottom electrode. The crystallization were characterized by X-ray diffraction (XRD). The electrical properties characteristics were observed by HP 4192A and precision LC.

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Comparison of Resonance Characteristics in FBAR Devices by Thermal Treatments

  • Mai Linh;Song Hae-il;Yoon Giwan
    • Journal of information and communication convergence engineering
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    • v.3 no.3
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    • pp.137-141
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    • 2005
  • The paper presents some methods to improve characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on Bragg reflectors. Thermal treatments were done by sintering and/or annealing processes. The measurement showed a considerable improvement of return loss $(S_{11})$ and quality factor $(Q_{s/p}).$ These thermal treatment techniques seem very promising for enhancing FBAR resonance performance.

Effect of post-annealing on the microstructure evolution of sputtered Bi-Te films (후열처리에 따른 Bi-Te 열전박막의 미세구조 연구)

  • Jeon, S.;Lee, H.;Hyun, S.;Oh, M.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2011.06a
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    • pp.741-742
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    • 2011
  • XRD 결과와 TEM 분석으로부터 열처리효과에 따른 Bi-Te 박막의 미세구조 변화를 확인하였다. $Bi_2Te_3$ 상이 $SiO_2$ 와 Bi-Te 박막의 경계면을 따라서 성장하였고 이는 열전성능에 중요한 영향을 미치는 것을 확인하였다.

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