Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Effects of Oxygen Partial Pressure and Post-Annealing Temperature on Structure of ZnO Thin Film Prepared by Pulsed Laser Deposition

PLD를 이용한 ZnO 박막의 구조에 산소 분압 및 후열처리 온도가 미치는 영향

  • Cho, Dae-Hyung (Department of Electrical Engineering, Korea University) ;
  • Kim, Ji-Hong (Department of Electrical Engineering, Korea University) ;
  • Koo, Sang-Mo (Department of Electrical Engineering, Korea University) ;
  • Moon, Byung-Moo (Department of Electronic Materials Engineering, Kwangwoon University)
  • 조대형 (고려대학교 전자전기공학과) ;
  • 김지홍 (고려대학교 전자전기공학과) ;
  • 구상모 (고려대학교 전자전기공학과) ;
  • 문병무 (광운대학교 전자재료공학과)
  • Published : 2007.11.02
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Abstract

ZnO thin films were deposited on $Al_2O_3$ (alumina) substrates by pulsed laser deposition (PLD) using Nd:YAG laser with a wavelength of 355nm, at room temperature and oxygen partial pressure of 1, 10, 30, 50, 100, and 200m Torr. Furthermore, deposited ZnO thin films were post-annealed at 400, 550, $600^{\circ}C$. The effects of oxygen partial pressure and post-annealing temperature on structural properties of the deposited films have been investigated by means of X-ray diffraction (XRD), and atomic force microscope (AFM), respectively. It has been found that ZnO thin films exhibit c-axis orientation, exhibiting an increased foil width at half maximum (FWHM) value of (002) diffraction peak at 30m Torr oxygen partial pressure and higher post-annealing temperature ($700^{\circ}C$).

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