• Journal of Power Electronics
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• v.2 no.3
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• pp.171-180
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• 2002

New 42-volt automotive electrical systems can provide significant improvements in vehicle performance and fuel economy. It is crucial to provide protection against load dump and other overvoltage transients in 42-volt systems. While advanced active control techniques are generally considered capable of providing such protection, the use of passive transient voltage suppression (TVS) devices as a secondary or supplementary protection means can significantly improve design flexibility and reduce system costs. This paper examines the needs and options for passive TVS devices for 42-volt applications. The limitations of the commonly available automotive TVS devices, such as Zener diodes and metal oxide varistors (MOV), are analyzed and reviewed. A new TVS device concept, based on power MOSFET and thin-film polycrystalline silicon back-to-back diode technology, is proposed to provide a better control on the clamp voltage and meet the new 42-volt specification. Both experimental and modeling results are presented. Issues related to the temperature dependence and energy absorbing capability of the new TVS device are discussed in detail. It is concluded that the proposed TVS device provides a cost-effective solution for load dump protection in 42-volt systems.

• Journal of the Korean institute of surface engineering
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• v.47 no.1
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• pp.20-24
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• 2014

Joule heat is generated by applying an electric filed to a conductive layer located beneath or above the amorphous silicon film, and is used to raise the temperature of the silicon film to crystallization temperature. An electric field was applied to an indium tin oxide (ITO) conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced within the range of a millisecond. To investigate the kinetics of Joule-heating induced crystallization (JIC) solid phase crystallization was conducted using amorphous silicon films deposited by plasma enhanced chemical vapor deposition and using tube furnace in nitrogen ambient. Microscopic and macroscopic uniformity of crystallinity of JIC poly-Si was measured to have better uniformity compared to that of poly-Si produced by other methods such as metal induced crystallization and Excimer laser crystallization.

• Transactions of Materials Processing
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• v.11 no.5
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• pp.439-446
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• 2002

This study presents a new computational model to analyze the grain deformation in a polycrystalline aggregate in a discrete manner and based directly in the underlying physical micro-mechanisms. When scaling down a metal forming process, the dimensions of the workpiece decrease but the microstructure of the workpiece remains the similar. Since the dimensions of the workpiece are very small, the microstructure especially the grain size will play an important role in micro forming, which is called size effects. As a result, specific characteristics have to be considered for the numerical analysis. The grains and grain boundary elements are introduced to model individual grains and grain boundary facets, respectively, to consider the size effects in the micro forming. The constitutive description of the grain elements accounts for the rigid-plastic and the grain boundary elements for visco-elastic relationships. The capability of the proposed approach is demonstrated through application of grain element and grain boundary element in the micro forming.

• Journal of the Korean institute of surface engineering
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• v.51 no.1
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• pp.21-26
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• 2018

The $Cu_2(btc)_3$ metal-organic frameworks (MOF) coated anodic aluminum oxide (AAO) membrane was successfully prepared by layer-by-layer technique using hand spray method. It was confirmed that the $Cu_2(btc)_3$ layer, which has the pore sized in 2-3 nm, on surface of AAO exhibited the polycrystalline thin film structure by XRD analysis. More than 100 repetitive spray cycles were required to obtain more robust and thick MOFs on AAO and it was possible to uniformly coat both the top and bottom surfaces of the AAO. It should be noted that the MOFs also could be coated on surface of pores resulting in reduce the size of pore from 52 nm to 32 nm.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1136-1139
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• 2009

Recently, various Ni doping systems and thermal annealing systems have been developed for fabrication of polycrystalline silicon film using SGS (super grain silicon) for medium and largesize AMOLED panels. In this study, we compare the potential of Ni doping systems including ALD (atomic layer deposition), AMD (atmospheric metal deposition), in-line sputter, and crystallization annealing systems including batch type furnace, inline furnace, and RTA (rapid thermal annealing) developed for the SGS method. Additional requirements for those systems to be used for mass production of large AMOLED TVs are suggested based on evaluation results for both poly-Si films and TFT backplanes.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.429-429
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• 2010

TFT 제조 방법 중 LTPS (Low Temperature Polycrystalline Silicon)는 저온과 저비용 등의 이점으로 인하여 flat panel display 제작에 널리 사용된다. 이동도와 전류 점멸비 등에서 이점을 가지는 ELA(Excimer Laser Annealing)가 널리 사용되고 있지만, 이 방법은 uniformity 등의 문제점을 가지고 있다. 이를 극복하기 위한 방법으로 MICC(Metal Induced Capping Crystallization)이 사용되고 있다. 이 방법은 $SiN_x$, $SiO_2$, SiON등의 capping layer를 diffusion barrier로 위치시키고, Ni 등의 금속을 capping layer에 도핑 한 뒤, 다시 한번 열처리를 통하여 a-Si에 Ni을 확산시키킨다. a-Si 층에 도달한 Ni들이 seed로 작용하여 Grain size가 매우 큰 film을 제작할 수 있다. 채널의 grain size가 클 경우 grain boundary에 의한 캐리어 scattering을 줄일 수 있기 때문에 MIC 방법을 사용하였음에도 ELA에 버금가는 소자의 성능과 안정성을 얻을 수있었다. 본 연구에서는 large grain TFT의 Gate bias stress에 따른 소자의 안정성 측정 및 분석에 목표를 두었다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.485-488
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• 2005

Most metals are polycrystalline material whose deformation is dominated by the slip system. During the deformation process, orientation of slip systems is rearranged with preferred orientations, leading to deformation-induced crystallographic texture which is called deformation texture. Depending on the texture development, the property of material can be changed. The rate-independent crystal plasticity which is based on the Schmid law as a yield function causes a non-uniqueness in the choice of active slip systems. In this work, to avoid the slip system ambiguity problem, rate-independent crystal plasticity model based on the smooth yield surface with rounded-off corners is adopted. In order to simulate the polycrystalline material under plastic deformation, we employ the Taylor model of polycrystal behavior that all the grains are assumed to be subjected to the macroscopic velocity gradient. Rigid-plastic finite element program based on this rate-independent crystal plasticity is developed to predict the grain-level deformation behavior of FCC metals during metal forming processes. In the finite element calculation, one integration point is considered as a crystalline aggregate which has a number of crystals. Macroscopic behavior of material can be deduced from the behavior of aggregates. As applications, the extrusion processes are simulated and the changes of mechanical properties are predicted.

• Korean Journal of Materials Research
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• v.13 no.11
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• pp.737-741
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• 2003

Polycrystalline $Ti_{l-x}$ $Co_{x}$ $O_2$thin films on $SiO_2$ (200 nm)/Si (100) substrates were prepared using liquid-delivery metalorganic chemical vapor deposition. Microstructures and ferromagnetic properties were investigated as a function of doped Co concentration. Ferromagnetic behaviors of polycrystalline films were observed at room temperature, and the magnetic and structural properties strongly depended on the Co distribution, which varied widely with doped Co concentration. The annealed $Ti_{l-x}$ $Co_{x}$ $O_2$thin films with $x\leq$0.05 showed a homogeneous structure without any clusters, and pure ferromagnetic properties of thin films are only attributed to the X$l-x_{l-x}$ $Co_{x}$X$O_2$phases. On the other hand, in case of thin films above x = 0.05, Co-rich clusters formed in a homogeneous $Ti_{l-x}$ $Co_{x}$ $O_2$phase, and the overall ferromagnetic (FM) properties depended on both FMTCO and FMCo. Co-rich clusters with about 10-150 nm size decreased the value of Mr (the remanent magnetization) and increased the saturation magnetic field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.427-431
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• 2020

In this research, we evaluated the electrical properties of polycrystalline-gallium-oxIde (Ga₂O₃) thin films grown by mist-CVD. A 500~800 nm-thick Ga₂O₃ film was used as a channel in a fabricated bottom-gate MOSFET device. The phase stability of the β-phase Ga₂O₃ layer was enhanced by an annealing treatment. A Ti/Al metal stack served as source and drain electrodes. Maximum drain current (I_D) exceeded 1 mA at a drain voltage (V_D) of 20 V. Electron mobility of the β-Ga₂O₃ channel was determined from maximum transconductance (g_m), as approximately, 1.39 ㎠/Vs. Reasonable device characteristics were demonstrated, from measurement of drain current-gate voltage, for mist-CVD-grown Ga₂O₃ thin films.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.10
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• pp.1463-1470
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• 2010

Microforming, which exploits the advantages of metal forming technology, appears very promising in manufacturing microparts since it enables the production of parts using various materials at a high production rate, it has high material utilization efficiency, and it facilitates the production of parts with excellent mechanical properties. However, the conventional macroscale forming process cannot be simply scaled down to the micro-scale process on the basis of the extensive results and know-how on the macroscale process. This is because a so-called "size effect" occurs as the part size decreases to the microscale. In this paper, we attempt to develop an effective analytical and experimental modeling technique for explaining the effects of the grain size and the specimen size on the behavior of metals in microscale deformation processes. Copper sheet specimens of different thicknesses were prepared and heat-treated to obtain various grain sizes for the experiments. Tensile tests were conducted to investigate the influence of specimen thickness and grain size on the flow stress of the material. In addition, an analytical model was developed on the basis of phenomenological experimental findings to quantify the effects of the grain size and the specimen size on the flow stress of the material in microscale and macroscale forming.