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http://dx.doi.org/10.3740/MRSK.2003.13.11.737

Microstructure and Magnetic Properties of Til-xCoxO2 Diluted Magnetic Semiconductor Thin Films with Various Co Concentrations by Metal Organic Chemical Vapor Deposition  

Seong, Nak-Jin (Department of Materials Engineering, Chungnam National University)
Oh, Young-Nam (Department of Materials Engineering, Chungnam National University)
Cho, Chae-Ryong (Korea Basic Science Institute, Busan branch)
Yoon, Soon-Gil (Department of Materials Engineering, Chungnam National University)
Publication Information
Korean Journal of Materials Research / v.13, no.11, 2003 , pp. 737-741 More about this Journal
Abstract
Polycrystalline $Ti_{l-x}$ $Co_{x}$ $O_2$thin films on $SiO_2$ (200 nm)/Si (100) substrates were prepared using liquid-delivery metalorganic chemical vapor deposition. Microstructures and ferromagnetic properties were investigated as a function of doped Co concentration. Ferromagnetic behaviors of polycrystalline films were observed at room temperature, and the magnetic and structural properties strongly depended on the Co distribution, which varied widely with doped Co concentration. The annealed $Ti_{l-x}$ $Co_{x}$ $O_2$thin films with $x\leq$0.05 showed a homogeneous structure without any clusters, and pure ferromagnetic properties of thin films are only attributed to the X$l-x_{l-x}$ $Co_{x}$X$O_2$phases. On the other hand, in case of thin films above x = 0.05, Co-rich clusters formed in a homogeneous $Ti_{l-x}$ $Co_{x}$ $O_2$phase, and the overall ferromagnetic (FM) properties depended on both FMTCO and FMCo. Co-rich clusters with about 10-150 nm size decreased the value of Mr (the remanent magnetization) and increased the saturation magnetic field.
Keywords
dilute magnetic semiconductor(dms); ferromagnetic property; ${Ti_{l-x}}{Co_x}{O_2}$; MOCVD;
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1 K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39, L555 (2000)   DOI
2 L. Forro, O. Chauvet, D. Emin and L. Zuppiroli, J. Appl. Phys. 75, 633 (1994)   DOI   ScienceOn
3 A. Twardowski, Acta Phys. Pol. A 98, 203 (2000)
4 T. Dietl, H. Ohno, F. Matsukura, J. Cibert and D. Ferrand, Science, 287, 1019 (2000)   DOI   ScienceOn
5 Y. M. Cho, W. K. Choo, H. J. Kim, D. J. Kim and Y. E. Ihrn, Appl. Phys. Lett. 80, 3358 (2002)   DOI   ScienceOn
6 Y. Matsumoto, M. Murakami, T. Shono, T. Hasegawa, T. Fukumura, M. Kawasaki, P. Ahmet, T. Chikyow, S.-Y. Koshihara and H. Koinuma, Science, 291, 854 (2001)   DOI   ScienceOn
7 S. A. Chambers, S. Thevuthasan, R. F. C. Farrow, R. F. Marks, J. U. Thiele, L. Folks, M. G. Samant, A. J. Kellock, N. Ruzycki, D. L. Ederer and U. Diebold, Appl. Phys. Lett. 79, 3467 (2001)   DOI   ScienceOn
8 I. B. Shim, S. Y. An, C. S. Kim, S. Y. Choi and Y. W. Park, J. Appl. Phys. 91, 7914 (2002)   DOI   ScienceOn
9 Y. Y. Kim, J. S. Baek, S. J. Lee, W. Y. Lim, S. C. Yu and S. H. Lee, IEEE Trans. Magn. 33, 3607 (1997)   DOI   ScienceOn