• 한국전기전자재료학회논문지
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• 제33권5호
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• pp.344-349
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• 2020

Modern thin film deposition processes require high deposition rates, low costs, and high-quality films. Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) meets these requirements. AP-PECVD causes little damage on thin film deposition surfaces compared to conventional PECVD. Moreover, a higher deposition rate is expected due to the surface heating effect of atomic hydrogens in AP-PECVD. In this study, polycrystalline silicon thin film was deposited at a low temperature of 100℃ and then AP-PECVD experiments were performed with various plasma powers and hydrogen gas flow rates. A deposition rate of 15.2 nm/s was obtained at the VHF power of 400 W. In addition, a metal foam showerhead was employed for uniform gas supply, which provided a significant improvement in the thickness uniformity.

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.493-498
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• 2008

This Paper describes the Raman scattering characteristics of polycrystalline (Poly) 3C-SiC thin films, in which they were deposited on AlN buffer layer by APCVD using hexamethyldisilane (MHDS) and carrier gases (Ar+$H_2$). When the Raman spectra of SiC films deposited on the AlN layer of before and after annealing were worked according to growth temperature, D and G bands of graphite were measured. It can be explained that poly 3C-SiC films admixe with nanoparticle graphite and its C/Si rate is higher than ($C/Si\;{\approx}\;3$) that of the conventional SiC, which has no D and G bands related to graphite. From the Raman shifts of 3C-SiC films deposited at $1180^{\circ}C$ on the AlN layer of after annealing, the biaxial stress of poly 3C-SiC films was obtained as 896 MPa.

• 분석과학
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• 제24권2호
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• pp.105-112
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• 2011

태양전지용 박막 규소나 차세대 반도체용 박막트랜지스터의 원료로 사용 가능한 하이드로폴리실란의 합성과 물성 분석에 관한 연구이다. 이러한 하이드로폴리실란을 유기 치환기가 없는 사염화규소를 사용하여 합성한 것이 가장 큰 특징이며, 일반적으로 알칼리금속을 사용한 환원법으로 유기용매에 가용성인 하이드로폴리실란을 합성하는 최적 조건을 확립하고자 하였으며 하이드로폴리실란 용액은 그 물성을 여러 가지 분석 방법을 사용하여 조사하였으며 또한 열분해 실험을 통해 무정형 또는 다결정성 규소로 전환시킬 수 있음을 확인하였다.

• 한국분말재료학회지
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• 제22권3호
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• pp.203-207
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• 2015

This study investigated the microstructure and wear resistance property of HPHT(high pressure high temperature) sintered PDC(polycrystalline diamond compact) in accordance with initial molding pressure. After quantifying an identical amount of diamond powder, the powder was inserted in top of WC-Co sintered material, and molded under four different pressure conditions (50, 100, 150, $200kgf/cm^2$). The obtained diamond compact underwent sintering in high pressure, high temperature conditions. In the case of the $50kgf/cm^2$ initial molding pressure condition, cracks were formed on the surface of PDC. On the other hand, PDCs obtained from $100{\sim}200kgf/cm^2$ initial molding pressure conditions showed a meticulous structure. As molding pressure increased, low Co composition within PDC was detected. A wear resistance test was performed on the PDC, and the $200kgf/cm^2$ condition PDC showed the highest wear resistance property.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.126-130
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• 1995

$CdS_{1-x}Te_{1-x}$ polycrystalline thin films were fabricated from CdS and CdTe powder by co-evaporation method at $10^{-6}$ Torr. The Optimum evaporation condition was substrate temperature $T_{s}$=$150^{\circ}C$, evaporation time t=30 min. XRD spectrums indicated that the crystal structure chanced from zinc blonde (x$\leq$0.22) to wurtzite (x$\geq$0.96) through mixed structure (0.22$\leq$0.74) as composition value x increase to CdS. Conductive type was n-type by hot point probe method. van der Pauw method was not applicable for x<0,5 due to high hall voltages, Electrical resistivity and Hall carrier mobility were decreased as x increase, while Hall carrier concentration was increased. The optical bandgap of $CdS_{1-x}Te_{1-x}$ polycrystalline thin films measure d at R.T. had quardratic form and the bowing parameter was fitted as 1.98eV for theoretical value of 2.0eV. I-V characteristics of In/CdTe/$CdS_{x}Te_{1-x}$Au Schottky diodes showed that CdS-rich one had better forward characteristics than CdTe-rich one.

• Progress in Superconductivity
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• 제6권1호
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• pp.41-45
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• 2004

Polycrystalline Tl-1223 superconductors with a chemical composition of (Tl, Pb, Bi)TEX>$ (Sr, Ba)<_2$$Ca_2$$Cu_3$$O_{x}$ were synthesized by the solid state reaction method. The optimum chemical composition was $Tl_{0.8}$ $Pb_{0.2}$ $Bi_{0.2}$ $Sr_{1.8}$ $Ba_{0.2}$ $Ca_{2.2}$ $Cu_3$$O_{x}$ And the optimum sintering temperature and time were $905^{\circ}C$ and 7.5h, respectively. The sample was evaluated for their superconducting properties by magnetization measurement. The critical temperature $T_{c}$ is 120 K and the critical current density $J_{c}$ (T=5K, 0T) is estimated to be ∼ $10^{5}$ A/$\textrm{cm}^2$ for $Tl_{0.8}$ $Pb_{0.2}$ $Bi_{0.2}$ $Sr_{1.8}$ $Ba_{0.2}$ $Ca_{2.2}$$Cu_3$$O_{x}$ .

• 한국태양에너지학회 논문집
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• 제32권2호
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• pp.113-119
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• 2012

This study aims to examine the effect of the combined application of green roof and PV system on the PV efficiency by measuring the temperature and performance of PV module in order to reduce the temperature on the roof using roof planting system and determine the potential of efficient increase in solar-light power generation. In the experimental methodology, either monocrystalline or polycrystalline PV module was installed in green roof or non-green roof, and then the surface temperature of PV was measured by TR-71U thermometer and again the performance, module body temperature, and conversion efficiency were measured by MP-160, TC selector MI-540, and PV selector MI-520, respectively. As a result, the average body temperature of monocrystalline module was lower by $6.5^{\circ}C$ in green roof than in non-green roof; that of polycrystalline module was lower by $8.8^{\circ}C$ in green roof than in non-green roof. In the difference of generation, the electricity generation of monocrystalline module in green roof was 46.13W, but that of polycrystalline module was 68.82 W, which indicated that the latter produced 22.69W more than the former.

• 한국재료학회지
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• 제5권2호
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• pp.197-202
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• 1995

저압 화학 기상증착법으로 제작한 비정질 실리콘의 표면 형태 및 결정 성장 과정을 증착조건과 열처리 조건의 변화에 따라 조사하였다. 비정질에서 결정으로 변화하는 전이온도인 570~$590^{\circ}C$에서 증착한 시편은 (311)조직의 거친 표면으로 성장하였다. 같은 증착 온도에서 두께가 두꺼울수록 다결정에서 비정질로 변화하였다. 증착하는 과정에서의 결정화는 기판에서부터 시작되지만, 진공상태를 그대로 유지하고 비정질 실리콘을 전이온도에서 열처리하면 표면 실리콘 원자가 이동하여 결정화하였다.

• 한국재료학회지
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• 제17권6호
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• pp.323-330
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• 2007

We fabricated thermaly evaporated 10 nmNi/(poly)Si films to investigate the energy saving property of silicides formed by rapid thermal annealing (RTA) at the temperature of $300{\sim}1200^{\circ}C$ for 40 seconds. Moreover, we fabricated $10{\sim}50$ nm-thick ITO/Si films with a rf-sputter as reference films. A four-point tester was used to investigate the sheet resistance. A transmission electron microscope (TEM) and an X-ray diffractometer were used for the determination of cross sectional microstructure and phase changes. A UV-VISNIR and FT-IR (Fourier transform infrared rays spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM analysis, we confirmed $20{\sim}70nm-thick$ silicide layers formed on the single and polycrystalline silicon substrates. Nickel silicides and ITO films on the single silicon substrates showed almost similar absorbance in near-IR region, while nickel silicides on polycrystalline silicon substrate showed superior absorbance above 850 nm near-IR region to ITO films. Nickel silicide on polycrystalline substrate also showed better absorbance in middle IR region than ITO. Our result implies that nano-thick nickel silicides may have exellent absorbing capacity in near-IR and middle-IR region.

• 한국재료학회지
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• 제16권9호
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• pp.571-577
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• 2006

We fabricated thermal evaporated 10 nm-Ni/(poly)Si and 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the thermal stability of nickel monosilicide at the elevated temperatures by rapid annealing them at the temperatures of $300{\sim}1200^{\circ}C$ for 40 seconds. Silicides for salicide process was formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester is used for sheet resistance. Scanning electron microscope and field ion beam were employed for thickness and microstructure evolution characterization. An x-ray diffractometer and an auger depth profile scope were used for phase and composition analysis, respectively. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1200^{\circ}C$ and $800^{\circ}C$, respectively, while the conventional nickel monosilicide showed low resistance below $700^{\circ}C$. The grain boundary diffusion and agglomeration of silicides led to lower the NiSi stable temperature with polycrystalline silicon substrates. Our result implies that our newly proposed Ir added NiSi process may widen the thermal process window for nano CMOS process.