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http://dx.doi.org/10.4313/JKEM.2008.21.6.493

Raman Scattering Characteristics of Polycrystalline 3C-SiC Thin Films deposited on AlN Buffer Layer  

Chung, Gwiy-Sang (울산대학교 전기전자정보시스템공학부)
Kim, Kang-San (울산대학교 전기전자정보시스템공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.6, 2008 , pp. 493-498 More about this Journal
Abstract
This Paper describes the Raman scattering characteristics of polycrystalline (Poly) 3C-SiC thin films, in which they were deposited on AlN buffer layer by APCVD using hexamethyldisilane (MHDS) and carrier gases (Ar+$H_2$). When the Raman spectra of SiC films deposited on the AlN layer of before and after annealing were worked according to growth temperature, D and G bands of graphite were measured. It can be explained that poly 3C-SiC films admixe with nanoparticle graphite and its C/Si rate is higher than ($C/Si\;{\approx}\;3$) that of the conventional SiC, which has no D and G bands related to graphite. From the Raman shifts of 3C-SiC films deposited at $1180^{\circ}C$ on the AlN layer of after annealing, the biaxial stress of poly 3C-SiC films was obtained as 896 MPa.
Keywords
Raman scattering; Polycrystalline 3C-SiC; AlN buffer layer;
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