• Proceedings of the Korean Society of Rheology Conference
• /
• 2002.11a
• /
• pp.109-112
• /
• 2002

• Proceedings of the Korean Fiber Society Conference
• /
• 2001.04b
• /
• pp.107-110
• /
• 2001

• Polymer(Korea)
• /
• v.24 no.4
• /
• pp.477-487
• /
• 2000

A series of poly(L-lactic acid) (PLLA)/poly($\beta$-hydroxynonanoate) (PHN) blend were prepared to study the miscibility and the crystallization behaviors. The thermal behaviors and characterization of PLLA/PHN blends Were studied using differential scanning calorimetry (DSC), XRD and polarizing optical microscopy (POM). The PLLA and PHN are partially miscible in amorphous region. The crystallinity of PLLA increased as the content of PHN increased, and T$_{g}$, T$_{c}$, and T$_{m}$ of PLLA shift as the content of PHN increased. Moreover, the number of PLLA spherulite increased as the content of PHN increased in the POM experiment. Thus, PHN acted as a nucleating agent to PLLA.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1604-1607
• /
• 2009

YAG laser crystallization of Si-based thin film deposited on plastic substrate has been studied. The Si-based thin films as crystallization precursor are with varied hydrogen (H) content. The effect of the H content on the crystallinity of the resulted poly-Si film has been investigated. The experimental results of the poly-Si crystallized by doublefrequency YAG laser shows that the initial dehydrogenation process could be left out if ${\mu}c$-Si was adopted as the crystallization precursor. The YAG laser annealing condition on plastic substrate and the crystallization results have been discussed in the paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.60-61
• /
• 2007

In this paper, the p-channel poly Si thin-film transistors (Poly-Si TFT's) using formed by solid phase crystallization (SPC) on glass substrate were fabricated. And we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's to indicate non-volatile memory (NVM) effect. Poly-Si TFT is investigated by measuring the electrical properties of poly-Si films, such as I-V characteristics, on/off current ratio. NVM characteristics is showed by measuring the threshold voltage change of TFT through I-V characteristics.

• Journal of the Korean institute of surface engineering
• /
• v.43 no.1
• /
• pp.7-11
• /
• 2010

Solid phase crystallization (SPC) is a simple method in producing a polycrystalline phase by annealing amorphous silicon (a-Si) in a furnace environment. Main motivation of the crystallization technique is to fabricate low temperature polycrystalline silicon thin film transistors (LTPS-TFTs) on a thermally susceptible glass substrate. Studies on SPC have been naturally focused to the low temperature regime. Recently, fabrication of polycrystalline silicon (poly-Si) TFT circuits from a high temperature polycrystalline silicon process on steel foil substrates was reported. Solid phase crystallization of a-Si films proceeds by nucleation and growth. After nucleation polycrystalline phase is propagated via twin mediated growth mechanism. Elliptically shaped grains, therefore, contain intra-granular defects such as micro-twins. Both the intra-granular and the inter-granular defects reflect the crystallinity of SPC poly-Si. Crystallinity and SPC kinetics of high temperatures were compared to those of low temperatures using Raman analysis newly proposed in this study.

• Polymer(Korea)
• /
• v.38 no.3
• /
• pp.299-306
• /
• 2014

ZnO pillared saponite was synthesized via a microwave hydrolysis method. To enhance interfacial compatibility between zinc oxide (ZnO) pillared saponite and poly lactic acid (PLA), ZnO pillared organic saponite was prepared by intercalation modification of cetyltrimethylammonium bromide. Moreover, PLA/ZnO pillared organic saponite nanocomposites were prepared by melting processing. The microstructure analysis of PLA/ZnO pillared organic saponite nanocomposites showed that ZnO pillared organic saponite was exfoliated and homogeneouslydispersed in PLA matrix. The property results showed that ZnO pillared organic saponite improved the mechanical properties and thermal stabilities of PLA/ZnO pillared organic saponite nanocomposites. Differential scanning calorimetry (DSC) demonstrated that ZnO pillared organic saponite restrained the appearance of cold crystallization, lowered the glass transition temperature and melting temperature of PLA, and improved the crystallinity of PLA. The results demonstrated that ZnO pillared organic saponite had a good interfacial compatibility and heterogeneous nucleation effect in PLA matrix, and also played an active role in accelerating the crystallization process of PLA.

• Journal of the Korean Chemical Society
• /
• v.31 no.6
• /
• pp.582-589
• /
• 1987

The thermal properties of poly (ethylene terephthalate) (PET) modified by 5-sulfoisophthalic acid sodium salt(SIAS) were studied. The glass transition temperature was increased, and the melting temperature and the crystallization rate were decreased as the content of SIAS unit was increased. The decrease of crystallization rate is thought to be due to the polar, bulky sulfonic acid sodium salt group which greatly retards the crystallization on to the growing crystal surface of the diffused polymer chain. The crystallization mechanism of copolyester is dependent on the content of SIAS unit and the three dimensional growth of crystal is hindered by the added SIAS unit.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.378-381
• /
• 2009

As a Joule-heat source, a conductive Mo layer was used to crystallize amorphous silicon for AMOLED backplanes. This Joule-heating induced crystallization (JIC) process could produce poly-Si having a grain size ranging from tens of nanometers to greater than several micrometers. Here, the blanket (single-shot whole-plane) crystallization could be achieved on the $2^{nd}$ and the $4^{th}$ generation glass substrate.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.36 no.10
• /
• pp.1019-1023
• /
• 2012

In this research, a novel direct-aluminum-heating-induced crystallization method was developed for the purpose of application to solar cells. By applying a constant current of 3 A to an aluminum thin film, a 200-nm-thick amorphous silicon (a-Si) thin film with a size of $1cm{\times}1cm$ can be crystallized into a polycrystalline silicon (poly-Si) thin film within a few tens of seconds. The Raman spectrum analysis shows a peak of 520 $cm^{-1}$, which verifies the presence of poly-Si. After removing the aluminum layer, the poly-Si thin film was found to be porous. SIMS analysis showed that the porous poly-Si thin film was heavily p-doped with a doping concentration of $10^{21}cm^{-3}$. Thermal imaging shows that the crystallization from a-Si to poly-Si occurred at a temperature of around 820 K.