• The Journal of the Korea institute of electronic communication sciences
• /
• v.11 no.1
• /
• pp.29-36
• /
• 2016

Recently a new class of quantum gate called $NCV-{\mid}v_1$ > library with low cost realizable potentialities is being watched with keen interest. The $NCV-{\mid}v_1$ > MCT gate is composed of AND cascaded-$CV-{\mid}v_1$ > gates to control the target qudit and its adjoint gates to erase junk ones. This paper presents a new symmetrical duality library named $NCV^{\dag}-{\mid}v_1$ > library corresponding to $NCV-{\mid}v_1$ > library. The new $NCV^{\dag}-{\mid}v_1$ > library can be operated on OR logic under certain conditions. By using both the $NCV-{\mid}v_1$ > and $NCV^{\dag}-{\mid}v_1$ > libraries it is possible to realize MPMCT gates, SOP and POS type synthesis of quantum logic circuits with extremely low cost, and expect dual gate property caused by different operational attributes with respect to forward and backward operations.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.6
• /
• pp.257-260
• /
• 2010

Zinc oxide (ZnO) bottom-contact thin-film transistors (TFTs) were prepared by the use of injector type atomic layer deposition. Two hybrid gate oxide systems of different polarity polymers with silicon oxide were examined with the aim of improving the properties of the transistors. The mobility and threshold voltage of a ZnO TFT with a poly(4-dimethylsilyl styrene) (Si-PS)/silicon oxide hybrid gate dielectric had values of 0.41 $cm^2/Vs$ and 24.4 V, and for polyimide/silicon oxide these values were 0.41 $cm^2/Vs$ and 24.4 V, respectively. The good hysteresis property was obtained with the dielectric of hydrophobicity. The solid output saturation behavior of ZnO TFTs was demonstrated with a $10^6$ on-off ratio.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.36 no.12
• /
• pp.868-873
• /
• 1987

In this pater, we have proposed a synthetic main chopper circuit for the chopper controlled electric automobile. The proposed chopper circuit operates as a step-down chopper in powering mode and as a polarity reversion type chopper in regenerative braking mode. In this study, it was found that powering and regenerative braking operations using the separately excited D.C motor can be controlled continuously only by gate signals of the chopper without changing the connection of the circuit.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.11 no.2
• /
• pp.165-170
• /
• 2016

The characteristic and application of a new duality structure in the $NCV-{\mid}v_1$ > library is studied in this paper. All unitary operations on arbitrarily many qudit's n can be expressed as composition of one- and two-qudit $NCV-{\mid}v_1$ > libraries if their state vectors are eigenvectors. This research provides an extended realization from Barenco's many bits n operator(U(2n)) which is applicable to only all positive polarity statevectors to whole polarity ones. At the control gate synthesis of a unitary operator, such an enhanced expansion is possible due to their symmetric duality property in the case of using both $NCV-{\mid}v_1$ > and $NCV^{\dag}-{\mid}v_1$ > libraries which make the AND predominantly dependent cascade synthesis possible.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.8
• /
• pp.605-610
• /
• 2010

The devices based on electrically erasable programmable read-only memory (EEPROM) structure are proposed for the detection of external electric charges. A large size charge contact window (CCW) extended from the floating gate is employed to immobilize external charges, and a control gate with stacked metal-insulator-metal (MIM) capacitor is adapted for a standard single polysilicon CMOS process. When positive voltage is applied to the capacitor of CCW of an n-channel EEPROM, the drain current increases due to the negative shift of its threshold voltage. Also when a pre-charged external capacitor is directly connected to the floating gate metal of CCW, the positive charges of the external capacitor make the drain current increase for n-channel, whereas the negative charges cause it to decrease. For an p-channel, however, the opposite behaviors are observed by the external voltage and charges. With the attachment of external charges to the CCW of EEPROM inverter, the characteristic inverter voltage behavior shifts from the reference curve dependent on external charge polarity. Therefore, we have demonstrated that the EEPROM inverter is capable of detecting external immobilized charges on the floating gate. and these devices are applicable to sensing the pH's or biomolecular reactions.

• 전기의세계
• /
• v.23 no.4
• /
• pp.60-65
• /
• 1974

This paper is to study on the pilot work of bi-directional S.C.R. power converter adopted by the method of diode-bridge type circuit. This apparatus acts as a converter when it is used in convering 3-phase a.c source to d.c output, and it can be used as an inverter which recovering surplus d.c power to a.c source when d.c load become active to cause the induced voltage higher than the presetted point of d.c output voltage. At the same time, its d.c voltage varies continuously in the presetted range of positive and/or negative polarity. As a result of test, the AC/DC bi-directional power converter represents maximum converting efficiency of 91% and power factor of 0.98. Furthermore, this converter also can be applied as a cycleconverter by varying the period of gate triggering signal.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.352-354
• /
• 2008

A 15.4" WXGA TFT-LCD, featuring integrated a-Si:H gate driver circuits and reduced data driver ICs, has been developed. To reduce number of data lines into 1/2 of conventional structure, the pixel array has been re-mapped with re-organized data signal. Unintended artificial effects such as flicker were removed by adopting the novel pixel array having a 'zigzag' map. To minimize the power consumption, a column inversion method was incorporated in the zigzag pixel array (Fig.1) without modifying the polarity map of conventional dot inversion method.

• Proceedings of the KIEE Conference
• /
• 2001.11c
• /
• pp.338-340
• /
• 2001

Power factor improved for single-phase buck-converter is studied in the paper. To sinusoidal waveform the input current with a near-unity power factor over a wide variety of operating conditions, the output capacitor is operated with voltage reversibility for the supply by arranging the auxiliary diode and power switching device. Then the output voltage is superposed on the input voltage during on time duration of power switching devices in order to minimize the input current distortion caused by the small input voltage when changing the polarity. The tested setup, using two insulated gate bipolar transistors(IGBT) and a microcomputer, is implemented and IGBT are switched with 20[kHz], which is out of the audible band. Moreover, a rigorous state-space analysis is introduced to predict the operation of the rectifier. The simulated results confirm that the input current can be sinusoidal waveform with a near-unity power factor and a satisfactory output voltage regulation can be achieved.

• Proceedings of the IEEK Conference
• /
• 1999.11a
• /
• pp.216-219
• /
• 1999

A simple two-terminal cyclic current-voltage(I-V) technique is used to measure the current-transients in MOS capacitors. Distinct charging/discharging currents were measured and analyzed as a function of (1) the hold time. (2) the gate polarity during the FNT electron injection, (3) the injection fluence and (4) the annealing time after the injection had stopped. Discharging and charging current-transients were strongly dependent upon the conditions for forming the inversion layer and the density of interface traps caused during the FNT electron injection, respectively. Several tentative mechanisms were suggested in the current work.

• Journal of Sensor Science and Technology
• /
• v.7 no.5
• /
• pp.364-371
• /
• 1998

A novel antifuse has been developed for field programmable gate arrays (FPGA's) as a voltage programmable link with Al/$BaTiO_3/SiO_2$/TiW-silicide. The proper program voltage can be obtained by adjusting the deposition thickness of $BaTiO_3$ film. When a negative voltage was applied at bottom TiW-silicide electrode of the antifuse, based on $BaTiO_3(120{\AA})$/$SiO_2(120{\AA})$, the program voltage was about l4.4V and on-resistances were ranged between 40 and $50{\Omega}$. The current-voltage characteristics of antifuses are consistent with a Frenkel-Poole conduction model. However, there are some deviations depending on bias polarity that are probably due to the difference in the interface properties between Al/$BaTiO_3$ and TiW-silicide/$SiO_2$.