• Journal of the Korean institute of surface engineering
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• v.32 no.2
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• pp.83-92
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• 1999

GaN etching was performed using planar inductively coupled $Cl_2$-based plasmas and the effects of main process parameters on the characteristics of the plasmas and their relations to GaN etch rates were studied. Also, the GaN etch mechanism was investigated using a Langmuir probe and optical emission spectroscopy (OES) during the etching, and X-ray photoelectron spectroscopy (XPS) of the etched surfaces. The GaN etch rates increased with the increase of chlorine radical density and ion energy, and a vertical etch profile haying the etch rate close to 4000 $\AA$/min could be obtained. The addition of 10% Ar to $Cl_2$ gas increased the GaN etch rate and the addition of Ar (more than 20%) and HBr generally reduced the GaN etch rate. The GaN etch rate appeared to be more affected by the chemical reaction between Cl radicals and GaN compared to the physical sputtering itself under the sufficient ion bombardments to break GaN bonds.

• Current Applied Physics
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• v.18 no.11
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• pp.1375-1380
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• 2018

Atmospheric-pressure plasma has a great potential in many applications due to its simplicity rather than low pressure plasmas. In material processing, biomedical applications, and many other applications, the input power, gas flow rate, and the geometry of electrode have been mainly considered and studied as important external parameters of atmospheric-pressure plasma control. Besides, since the atmospheric-pressure plasmas are typically generated in an open air, the relative humidity is difficult to control and can change day by day. Therefore, the relative humidity cannot be ignored for plasmas. Thus, in this work, the atmospheric-pressure plasma jet was characterized by changing relative humidity, and it was found that the increase in electron density and OH radicals are due to Penning ionization between helium metastable and water vapors at higher humidity condition.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.49-49
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• 1999

In this study, $Cl_2/BCI_3$ magnetized inductively coupled plasmas (MICP) were used to etch GaN and the effects of magnetic confinements of inductively coupled plasmas on the GaN etch characteristics were investigated as a function of $Cl_2/BCI_3$. Also, the effects of Kr addition to the magnetized $Cl_2/BCI_3$ plasmas on the GaN etch rates were investigated. The characteristics of the plasmas were estimated using a Langmuir probe and quadrupole ma~s spectrometry (QMS). Etched GaN profiles were observed using scanning electron microscopy (SEM). The small addition of $Cl_2/BCI_3$ (10-20%) in $Cl_2$ increased GaN etch rates for both with and without the magnetic confinements. The application of magnetic confinements to the $Cl_2/BCI_3$ inductively coupled plasmas (ICP) increased GaN etch rates and changed the $Cl_2/BCI_3$ gas composition of the peak GaN etch rate from 10% $BCI_3$ to 20% $BCI_3$. It also increased the etch selectivity over photoresist, while slightly reducing the selectivity over $Si0_2$. The application of the magnetic field significantly increased positive $BCI_2{\;}^+$ measured by QMS and total ion saturation current measured by the Langmuir probe. Other species such as CI, BCI, and CI+ were increased while species such as $BCl_2$ and $BCI_3$ were decreased with the application of the magnetic field. Therefore, it appears that the increase of GaN etch rate in our experiment is related to the increased dissociative ionization of $BCI_3$ by the application of the magnetic field. The addition of 10% Kr in an optimized $Cl_2/BCI_3$ condition (80% $Cl_2/$ 20% $BCI_3$) with the magnets increased the GaN etch rate about 60%. More anisotropic GaN etch profile was obtained with the application of the magnetic field and a vertical GaN etch profile could be obtained with the addition of 10% Kr in an optimized $Cl_2/BCI_3$ condition with the magnets.

• Corrosion Science and Technology
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• v.2 no.5
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• pp.238-242
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• 2003

The characteristics of Ru etching using $O_2/Cl_2$ plasmas were investigated by employing inductively coupled plasma (ICP) etcher. The changes of Ru etch rate, Ru to $SiO_2$ etch selectivity and Ru electrode etching slope with the gas flow ratio, bias power, total gas flow rate, and source power were scrutinized. A high etching slope (${\sim}86^{\circ}$) and a smooth surface after etching was attained using $O_2/Cl_2$ inductively coupled plasma.

• Bulletin of the Korean Space Science Society
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• 2004.04a
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• pp.35-35
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• 2004

Inhomogeneity Is important in wave coupling and mode conversion. We numerically examine the conversion of extraordinary(X) waves into upper hybrid(UH) waves in inhomogeneous plasmas by using a three-dimensional multi-fluid numerical model. A one-dimensional Inhomogeneous density profile is assumed in a cold and collisionless plasma. The density gradient is taken to be perpendicular to the magnetic field. An impulsive input is assumed to excite the X waves in the inhomogeneous box model. (omitted)

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.99.2-99.2
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• 2007

• Nuclear Engineering and Technology
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• v.44 no.1
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• pp.1-8
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• 2012

Thermal plasma technology has been at the center of major developments over the past century. It has found numerous applications ranging from aerospace materials testing to nanopowder synthesis and processing. In the present review highlights of principal breakthroughs in this field are presented with emphasis on an analysis of the basic phenomena involved, and the potential of the technology for industrial scale applications.

• Journal of The Korean Astronomical Society
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• v.34 no.4
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• pp.225-230
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• 2001

Rarefied cosmic plasmas generally do not achieve thermodynamic equilibria, and a natural consequence of this is the presence of a significant population of charged particles with energies well above those of the bulk population. These are exemplified by the galactic cosmic rays, but the importance of these high energy populations extends well beyond that context. I review here some of the basic issues associated with the propagation and acceleration of cosmic rays, especially in the context of collisionless plasma shocks.

• Proceedings of KOSOMES biannual meeting
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• 2017.04a
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• pp.268-268
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• 2017

We have investigated effects of AM on initial phase of rf discharge plasmas. Amplitude modulation significantly affects on initial rf discharge plasmas.

• 한국연소학회:학술대회논문집
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• 2015.12a
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• pp.181-182
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• 2015

The nonequilibrium plasmas in which electrons have much higher energy compared to heavy species that cannot be represented with single temperature can enhance combustion reaction significantly. Therefore the nonequilibrium plasmas provide new effective mechanism to control combustion to overcome difficulties advanced combustion devices exploiting extreme operating parameters for high efficiency, lower emission.